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Compact High-Tc Superconducting Terahertz emitter operating up to 86 K

Hancong Sun, Raphael Wieland, Zuyu Xu, Zaidong Qi, Yangyang Lv, Ya Huang, Huili Zhang, Xianjing Zhou, Jun Li, Yonglei Wang, Fabian Rudau, Johannes S. Hampp, Dieter Koelle, Shigeyuki Ishida, Hiroshi Eisaki, Yoshiyuki Yoshida, Biaobing Jin, Valery P. Koshelets, Reinhold Kleiner, Huabing Wang, and Peiheng Wu
Phys. Rev. Applied 10, 024041 – Published 27 August 2018; Erratum Phys. Rev. Applied 14, 059901 (2020)
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  • INTRODUCTION
  • SAMPLE PREPARATION AND MEASUREMENT…
  • RESULTS
  • CONCLUSIONS
  • ACKNOWLEDGMENTS
  • APPENDICES
    • References

    Abstract

    We report on a Stirling-cooled compact Bi2Sr2CaCu2O8+δ intrinsic Josephson-junction stack with very high critical current density and improved cooling, operating at bath temperatures Tb up to 86 K. The square stand-alone stack is embedded between two sapphire substrates. For bath temperatures between 27.8 and 86 K emission is observed at frequencies from 0.356 to 2.09 THz. The emission power exceeds 1μW at bath temperatures between 60 and 80 K for emission frequencies between 0.5 and 0.88 THz. A record high value of 0.577 THz is obtained for the emission frequency at Tb=80K, which is important for potential applications using liquid nitrogen as a coolant. We also compare our experimental results with numerical simulations based on three-dimensional coupled sine-Gordon equations combined with heat diffusion equations.

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    • Received 26 April 2018

    DOI:https://doi.org/10.1103/PhysRevApplied.10.024041

    © 2018 American Physical Society

    Physics Subject Headings (PhySH)

    1. Research Areas
    Optoelectronics
    1. Physical Systems
    CupratesHigh-temperature superconductorsJosephson junctionsOptical materials & elements
    1. Techniques
    Microwave techniquesTerahertz techniques
    Plasma PhysicsCondensed Matter, Materials & Applied Physics

    Erratum

    Erratum: Compact High-Tc Superconducting Terahertz emitter operating up to 86 K [Phys. Rev. Applied 10, 024041 (2018)]

    Hancong Sun, Raphael Wieland, Zuyu Xu, Zaidong Qi, Yangyang Lv, Ya Huang, Huili Zhang, Xianjing Zhou, Jun Li, Yonglei Wang, Fabian Rudau, Johannes S. Hampp, Dieter Koelle, Shigeyuki Ishida, Hiroshi Eisaki, Yoshiyuki Yoshida, Biaobing Jin, Valery P. Koshelets, Reinhold Kleiner, Huabing Wang, and Peiheng Wu
    Phys. Rev. Applied 14, 059901 (2020)

    Authors & Affiliations

    Hancong Sun1, Raphael Wieland2, Zuyu Xu1, Zaidong Qi1, Yangyang Lv1, Ya Huang1, Huili Zhang1, Xianjing Zhou1, Jun Li1, Yonglei Wang1, Fabian Rudau2, Johannes S. Hampp2, Dieter Koelle2, Shigeyuki Ishida3, Hiroshi Eisaki3, Yoshiyuki Yoshida3, Biaobing Jin1, Valery P. Koshelets4, Reinhold Kleiner2, Huabing Wang1,*, and Peiheng Wu1

    • 1Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
    • 2Physikalisches Institut and Center for Quantum Science in LISA+, Universität Tübingen, 72076 Tübingen, Germany
    • 3Electronics and Photonics Research Institute, Advanced Industrial Science and Technology, Tsukuba 3058568, Japan
    • 4Kotel'nikov Institute of Radio Engineering and Electronics, Moscow 125009, Russia

    • *hbwang@nju.edu.cn

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    Issue

    Vol. 10, Iss. 2 — August 2018

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    Images

    • Figure 1
      Figure 1

      (a) The BSCCO stack sandwiched between two sapphire substrates and mounted on a hemispheric sapphire lens. Current and voltage leads are indicated. (b) The Cu holders used to fix and cool the BSCCO stack (not to scale).

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    • Figure 2
      Figure 2

      (a) Out-of-plane resistance of the BSCCO stack vs bath temperature. (b) IVCs for four bath temperatures. The corresponding terahertz-emission power is indicated by colors. The emission power of the 85, 60, and 27.8-K curves is multiplied by factors of 43, 2.6, and 56, respectively, to match the color scale. For the 27.8-K curve black arrows indicate the sweep direction, and for the 70-K curve a gray arrow marks a voltage jump. (c) Fourier spectra of the emitted radiation for the bias points A–H indicated in (b). Adjacent curves are vertically offset for clarity, and the frequency values of the highest emission peak, defining fe, are indicated for each curve.

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    • Figure 3
      Figure 3

      (a) IVC of the emitter, as measured at Tb=80K. Arrows indicate the sweep direction. (b),(c) The emission power as a function of I and V, respectively. (d) Fourier spectra of the emitted radiation for bias points A–E indicated in (a).

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    • Figure 4
      Figure 4

      (a) Emission power Pe vs emission frequency fe [i.e., the peak positions and values taken from Fourier spectra such as the ones shown in Figs. 2 and 22] at various Tb values indicated by the color code. Arrows and dashed lines indicate emission peaks. (b) Emission frequency fe vs bath temperature for Tb≥ 60 K. The color code indicates the emission power Pe.

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    • Figure 5
      Figure 5

      Results of numerical simulation for a 200×200μm2 stand-alone 600-junction stack with a critical current density jc=2kA/cm2. (a) Outermost branch of the IVCs for four different bath temperatures (points connected by lines). Additional points at I=120 and 100 mA are obtained by our sweeping the bath temperature at fixed current. The color scale indicates the emission power, calculated from the Poynting vector taken along the circumference of the stack. (b)–(g) Color maps showing the in-plane distribution of the power density ⟨q∥(x,y)⟩ dissipated by in-plane currents, averaged over time and the z direction. (b),(c),(d): Tb=70K, I=100mA; (e) Tb=60K, I=120mA; (f) Tb=57.5K, I=100mA; (g) Tb=28K, I=120mA. In (g) the power scale is multiplied by 0.3.

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