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Lattice deformation and potential effects on linear and nonlinear optical properties of doped SiGe quantum dot encapsulated in Si matrix

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Abstract

Electron states in spheroid \(Si_{0.7}Ge_{0.3}\) quantum dots are investigated taking into account the presence of a donor impurity atom and a weak external electromagnetic laser field. The conduction band confining profile along the radial direction is modelled by a parameterized exponential potential. Based on the calculated inter-state transition energies, the nonlinear optical responses associated with light absorption, relative refractive index change, and second and third harmonics generation are evaluated and discussed. Results are reported considering different positions of the donor center in the dot as well as for different values of the exponential potential parameter. When the impurity is shifted to different position, the polarisation changes inside the dot and hence the energy and wave function of the system. The change of impurity position from center to edge of the dot causes redshift whereas the increase in potential parameter causes blueshift.

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Data Availability Statement

This manuscript has associated data in a data repository. [Authors’ comment: The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.].

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Acknowledgements

L. M. Pérez acknowledges financial support from ANID through Convocatoria Nacional Subvención a Instalación en la Academia Convocatoria Año 2021, Grant SA77210040. D. Laroze acknowledges partial financial support from Centers of Excellence with BASAL/ANID financing Grant AFB180001, CEDENNA. M. E. Mora-Ramos acknowledges support from Mexican CONACYT through Grant A1-S-8218 (CB 2017-2018).

Author information

Authors and Affiliations

  1. Department of Physics and Astrophysics, University of Delhi, Delhi, 110007, India

    Varsha

  2. Department of Physics, Kalindi College, University of Delhi, Delhi, 110008, India

    Varsha

  3. Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM, Mohammed V University in Rabat, Rabat, Morocco

    K. Lakaal, M. Kria, J. El Hamdaoui & E. Feddi

  4. Laboratory of Condensed Matter and Interdisciplinary Sciences (LaMCScI), Faculty of Sciences Rabat, Mohammed V University in Rabat, Morocco V University in Rabat, Rabat, Morocco

    K. Lakaal, M. Kria & J. El Hamdaoui

  5. Department of Physics, Swami Shraddhanand College, University of Delhi, Delhi, 110036, India

    V. Prasad

  6. Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir, 43150, Morocco

    E. Feddi

  7. Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá, Casilla 7 D, Arica, Chile

    D. Laroze

  8. Departamento de Física, FACI, Universidad de Tarapacá, Casilla 7 D, Arica, Chile

    L. M. Pérez

  9. Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico

    M. E. Mora Ramos

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  1. Varsha
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  2. K. Lakaal
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All the authors contributed equally to the manuscript.

Corresponding author

Correspondence to V. Prasad.

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Varsha, Lakaal, K., Kria, M. et al. Lattice deformation and potential effects on linear and nonlinear optical properties of doped SiGe quantum dot encapsulated in Si matrix. Eur. Phys. J. Plus 137, 1340 (2022). https://doi.org/10.1140/epjp/s13360-022-03530-9

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