Abstract
We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density (n~1014 cm−2) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×1014 cm−2 in graphene and its multi-layers.
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Ye, J.T., Craciun, M.F., Koshino, M. et al. Creating Novel Transport Properties in Electric Double Layer Field Effect Transistors Based on Layered Materials. MRS Online Proceedings Library 1288, 809 (2010). https://doi.org/10.1557/opl.2011.289
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DOI: https://doi.org/10.1557/opl.2011.289