Abstract
Optical transitions in Er2O3 films grown on Si substrates by using a metal-organic chemical vapor deposition technique were investigated in a wide temperature (300 K ~ 5 K) and spectral (500 nm and 850 nm) ranges. Numerous sharp transitions corresponding to the Er3+ ionic levels, which showed Stark shifts induced by the crystal field were observed. With decreasing temperature from 300 K to 5 K, all transition peaks exhibited spectral red-shifts. We believe that such red-shift behavior is due to a change in the crystal field together with a change in the strain field induced by the film and the substrate with varying temperature. An interesting result is the total amount of red-shift at temperature between 300 K and 5 K. We found that the higher transition energy peaks show bigger red-shifts. This is because the dipole moments between the transition levels are different, which leads to different amounts of the Stark shift.
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References
J. Miche et al., J. Appl. Phys. 70, 2672 (1991).
J. M. Zavada et al., J. Alloys Compd. 207, 300 (2000).
G. Bai et al., Nanoscal. 10, 9261 (2018).
P. A. Burns et al., IEEE J. Quantum Electron. 40, 1575 (2004).
Y. J. Chen et al., Appl. Phys. Lett. 89, 241111 (2006).
Y. Li et al., Opt. Expres. 21, 6082 (2013).
M. Abdel-Baki and F. El-Diasty, Int. J. Opt. Appl. 3, 125 (2013).
J. Huang et al., Opt. Mater. Expres. 5, 1579 (2015).
R. G. Burns, Mineralogical Applications of Crystal Field Theory, 2nd ed. (Cambridge University Press, Cambridge, UK, 1993).
J. B. Gruber et al., J. Appl. Phys. 93, 3137 (2003).
J. B. Gruber et al., Opt. Mater. Expres. 2, 1186 (2012) and the references therein.
J. Cui and G. A. Hope, J. Spectrosc. 2015, 940172 (2015) and the references therein.
F. Hong, Z. Cheng, X. Wang and S. Dou, Appl. Phys. Lett. 101, 121913 (2012).
G. G. Lesseux et al., AIP Adv. 7, 055709 (2017)
K. Pavani et al., Sci. Rep. 7, 17646 (2017).
H. Choi, W. J. Byun and Y. Kim, J. Korean Phys. Soc. 75, 699 (2019).
M. Ivanda, R. Clasen, M. Hornfeck and W. Kiefer, J. Non-Cryst. Solid. 322, 46 (2003).
D. Yan et al., J. Appl. Phys. 114, 193502 (2013).
J. Yu et al., J. Rare Earth. 32, 1 (2014).
S. Chandra, S. I. Deepak, J. B. Gruber and D. K. Sardar, J. Phys. Chem. 114, 874 (2010).
H. S. Kamineni et al., J. Appl. Phys. 111, 013104 (2012).
C.-H. Kao et al., Solid State Commun. 152, 504 (2012).
R. Xu et al., J. Cryst. Growt. 277, 496 (2005).
S. Singn, J. C. Davenport and N. D. Mills, J. Am. Ceram. Soc. 53, 169 (1970).
C. P. Herrero, Solid State Commun. 110, 243 (1999).
R. Dargis et al., ECS J. Solid State Sci. Technol. 1, N24 (2012).
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The present research was supported by the research fund of Dankook University in 2016.
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Choi, H., Shin, Y.H. & Kim, Y. Temperature Dependence of the Stark Shifts of Er3+ Transitions in Er2O3 Thin Films on Si(001). J. Korean Phys. Soc. 76, 1092–1095 (2020). https://doi.org/10.3938/jkps.76.1092
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DOI: https://doi.org/10.3938/jkps.76.1092