The measured performance of the fabricated chip show 20.2 dBm maximum output power, 31.5% peak power added efficiency, and 10.5 dB power gain across 4 GHz ...
Abstract: A Q-band two-stage Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process. A mm-wave Class-E architecture ...
The measured performance of the fabricated chip show 20.2 dBm maximum output power, 31.5% peak power added efficiency, and 10.5 dB power gain across 4 GHz ...
A Q-band two-stage Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process considering the effect of various interconnect ...
The RF Class E amplifier was fabricated in a 0.18 μm BiCMOS SiGe technology. The RF Class E power amplifier achieved a collector efficiency (CE) of 62.7% and ...
Kunal Datta, Jonathan Roderick, Hossein Hashemi: A 20 dBm Q-band SiGe Class-E power amplifier with 31% peak PAE. CICC 2012: 1-4.
S-parameters of a 50Ω 800µm long micro-strip line. A 20 dBm Q-band SiGe class-E power amplifier with 31% peak PAE. Conference Paper. Full-text available. Sep ...
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A 20 dBm Q-band SiGe Class-E power amplifier with 31% peak PAE [pdf] K Datta, J Roderick, H Hashemi IEEE Custom Integrated Circuits Conference, September ...
, Hashemi, “A 20 dBm Q-band SiGe class-E power amplifier with 31% peak PAE,” in Custom Integrated Circuits Conference (CICC), 2012 IEEE, Sept. 2012, pp. 1–4 ...
A 20 dBm Q-band SiGe Class-E power amplifier with 31% peak PAE · The Design of All-Digital Polar Transmitter Based on ADPLL and Phase Synchronized ΔΣ Modulator.