The 21.5times32.5mm 2 die contains 2.05 billion transistors. The silicon is designed to operate the cores up to 2.0GHz and the system interface at 2.4GHz, with ...

Dec 30, 2008 · This paper describes an Itanium processor implemented in 65 nm process with 8 layers of Cu interconnect. The 21.5 mm by 32.5 mm die has 2.05B transistors.

The 21.5times32.5mm² die contains 2.05 billion transistors. The silicon is designed to operate the cores up to 2.0GHz and the system interface at 2.4 ...

This paper describes an Itanium processor implemented in 65 nm process with 8 layers of Cu interconnect, which has four dual-threaded cores, 30 MB of cache, ...

This paper describes an Itanium processor implemented in 65 nm process with 8 layers of Cu interconnect. The 21.5 mm by 32.5 mm die has 2.05B transistors.

Abstract—This paper describes an Itanium processor imple- mented in 65 nm process with 8 layers of Cu interconnect. The.

The next generation in the Itanium processor family is introduced. The processor has 4 dual-threaded cores integrated on die with a system interface and ...

This paper describes an Itanium processor implemented in 65 nm process with 8 layers of Cu interconnect. The 21.5 mm by 32.5 mm die has 2.05B transistors.

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A 65nm 2-Billion-Transistor Quad-Core Itanium® Processor ; Circuit Design for Voltage Scaling and SER Immunity on a Quad-Core Itanium® Processor. Krueger D., ...