Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures.
Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures.
Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures.
This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound ...
Missing: nanostructures. | Show results with:nanostructures.
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Bourouina, "Advanced etching of silicon based on deep reactive ion etching for HAR microstructures and 3D micro- and nanostructures,". Microelectronics ...
This paper reports an improved deep reactive ion etching (DRIE) process for ultra high aspect ratio silicon trenches with reduced undercut.
Apr 17, 2018 · 1 Introduction. The typical technique progressed in the Si micromachining will be the deep reactive ion etching (deep RIE) (Laermer et al. 2015) ...
G. M. Beheim, Deep reactive ion etching for bulk micromachining of silicon carbide, The MEMS Handbook, Editor Gad-el Hak, Chapter 21, 2002, pp. 21-1–21-12.
Apr 17, 2024 · High aspect ratio and anisotropic etching are commonly achieved by the ICP-based Bosch process, which is a repetition of two etching steps: ...
