Prior to MOCVD epitaxial growth, an AlN buffer layer was deposited on the sapphire substrate by magnetron sputtering, and then a series of AlGaN/GaN HEMTs ...
AlGaN/GaN HEMTs with a magnetron-sputtered AlN buffer layer ...
dl.acm.org › doi › j.mejo.2023.105926
The method that a magnetron-sputtered AlN is introduced on sapphire substrate displays great potential in fabricating high-voltage and high-power AlGaN/GaN ...
AlGaN/GaN HEMTs with a magnetron-sputtered AlN buffer layer · Chunxiao Zhao, Ni Zeng, +7 authors. Yi'an Yin · Published in Microelectronics Journal 1 August 2023 ...
Ambacher, Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, ...
The method that a magnetron-sputtered AlN is introduced on sapphire substrate displays great potential in fabricating high-voltage and high-power AlGaN/GaN ...
In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the ...
AlGaN thin films with different Al content were grown via reactive magnetron sputtering onto glass substrates using independent Al and Ga targets.
Dec 5, 2019 · Firstly, a thin sputtered AlN layer was deposited on the sapphire substrates using a magnetron radio frequency reactive sputtering method with ...
An AlGaN/GaN high electron mobility transistor (HEMT) using the magnetron sputter to deposit silicon nitride (SiN) passivation layer is proposed in this ...
Aug 28, 2023 · Gallium nitride (GaN) epitaxial films on sapphire (Al2O3) substrates have been grown using reactive magnetron sputter epitaxy with a liquid ...