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Abstract: In this paper we present an 8T footless storage element, the FFDICE (FinFET DICE), a dual interlocked structure using Independent Gate SOI FinFET ...
Abstract—In this paper we present an 8T footless storage ele- ment, the FFDICE (FinFET DICE), a dual interlocked structure using Independent Gate SOI FinFET ...
Jan 12, 2024 · In this paper we present FF-DICE (Footless-FinFET-DICE), an 8T footless storage element that exhibits soft error resilience characteristics ...
In this paper we present FF-DICE (Footless-FinFET-DICE), an 8T footless storage element that exhibits soft error resilience characteristics to Single Event ...
An independent dual gate SOI FinFET soft-error resilient memory cell. N ... FF-DICE: An 8T soft-error tolerant cell using Independent Dual Gate SOI FinFETs.
The simulation results reveal that the independent double gate FinFETs in place of access devices in 6T-SRAM does not degrade the soft error performance ...
Missing: dual | Show results with:dual
An independent dual gate SOI FinFET soft-error resilient memory cell. N ... FF-DICE: An 8T soft-error tolerant cell using Independent Dual Gate SOI FinFETs.
Furthermore, our proposed SRAM structure is the best soft error resilient design and, with a low difference, has the second least hold and read stability ...
An independent dual gate SOI FinFET soft-error resilient memory cell pp. 39 ... Reliability assessment of backward error recovery for SRAM-based FPGAs pp.
et al., "An Independent Dual Gate SOI FinFET Soft-Error Resilient Memory Cell", 2014 International Design and Test Symposium, vol., No., Dec. 31, 2014 ...