In this paper we show a case study of items (iii) and (iv) of the above list on a particular digital CMOS circuit for the simpler case of hard gate oxide ...
A CMOS ring oscillator circuit is observed to operate even after a number of its FET's have undergone a hard gate oxide breakdown. The first breakdown is ...
Abstract. A CMOS ring oscillator circuit is observed to operate even after a number of its FET's have undergone a hard gate oxide breakdown.
This paper explores problems related to transistor degradation mechanisms by means of a circuit example, indicating the time-dependent stochastic nature of ...
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study ; dc.contributor.author, Van de Mieroop, Koen.
A CMOS ring oscillator circuit is observed to operate even after a number of its FET's have undergone a hard gate oxide breakdown. The first breakdown is ...
TL;DR: In this paper, the influence of FET gate oxide breakdown on the performance of a ring oscillator circuit was studied using statistical tools, emission ...
“Impact of MOSFET oxide breakdown on digital circuit operation and reliability,” in IEDM Tech. Dig., 2000, pp. 553-556. [3] P. Smeys, et al., "A high ...
The influence of FET gate oxide breakdown on the performance of a ring oscillator circuit is studied using statistical tools, emission microscopy, ...
Study Of Gate Oxide Breakdown And Hot Electron Effect On Cmos Circuit ...
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The major reliability issues caused by voltage are hot carrier effects (HCs) and gate oxide breakdown (BD) effects. These issues are recently more important to ...
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