Analysis of Optical Stressed Si-Ge Avalanche Photodiodes - IEEE Xplore
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Abstract: We measure and analyze the bit error rates and eye diagrams of the optical stressed Si-Ge avalanche photodiode at 32 Gb/s NRZ operation.
In this work, we measure and analyze the relationship between APD performance and optical signal-to-noise ratios (OSNRs) to illustrate the quality requirements ...
We investigated the quantitative effect of internal shear on grain breakage during rock-avalanche runout, by means of 38 ring-shear experiments on identical ...
Analysis of Optical Stressed Si-Ge Avalanche Photodiodes. Yuan, Y., Srinivasan, S., Peng, Y., Liang, D., Huang, Z., Sorin, W. V, Cheung, S., Fiorentino, M ...
We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection.
Oct 22, 2024 · In this paper, we reviewed the structure, materials, process, performance and reliability of the Ge/Si APD devices.
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The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region.
Mar 25, 2022 · This paper reviews design and optimization in high-speed Si-Ge APDs, including advanced APD structures, APD modeling and APD receivers.
Missing: Stressed | Show results with:Stressed
Avalanche photodiodes (APDs) are high-sensitivity, semiconductor photo-detectors. In this work, two APDs for next generation 10 Gbit/s.
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This work provides a promising method to design high-speed and high-efficiency normal-incidence Ge/Si heterostructure APDs for optical interconnect systems.
Missing: Stressed | Show results with:Stressed