In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3 T-DRAM) cell using a single word-line for both read and write operations.

Aug 20, 2021 · In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3T-DRAM) cell using a single word-line for both read and ...

Aug 20, 2021 · In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3T-DRAM) cell using a single word-line for both read and ...

In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3 T-DRAM) cell using a single word-line for both read and write operations.

In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3T-DRAM) cell using a single word-line for both read and write operation.

Aug 1, 2022 · In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3 T-DRAM) cell using a single word-line for both read and ...

In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3 T-DRAM) cell using a single word-line for both read and write operations.

Design of novel 3T ternary DRAM with single word-line using CNTFET. https ... Jaber, 1-trit ternary multiplier and adder designs using ternary multiplexers and ...

A novel standard ternary inverter (STI) design based on carbon nanotube FET and memristor and the fact that the threshold voltage of the CNTFET can be ...