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Abstract: Channel thickness T CH dependence of electron mobility μ EFF in thin In 0.53 Ga 0.47 As channels was investigated at temperatures T from 35 to 300 ...
Oct 12, 2017 · It is show that accurate mobility measurements can be obtained using low T and/or fast pulsed measurements, thus avoiding significant ...
Abstract — Channel thickness TCH dependence of electron mobility µEFF in thin In0.53Ga0.47As channels was investigated at temperatures T from 35 to 300 K ...
It is demonstrated that room-temperature μκρρ degrades by less than 10% as T ch is scaled from 300 nm down to 7 nm, thus indicating that there is no ...
We fabricated 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors (HEMTs) with a very thin barrier. Through the reduction of the gate-channel ...
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In0.53Ga0.47As is a promising channel material for future nMOS-. FETs since it provides high electron mobility and an acceptable bandgap [1]. Higher ...
Owing to the high electron mobility of heterostructure III–V semiconductor materials, the impressive performance of high frequency III–V metal-oxide- ...
Mar 31, 2014 · High electron mobility InGaAs channels have recently been extensively studied as a potential replacement of Si channels for future ...
Received on 4 April, 2005. The low-temperature electron mobility is investigated here for electrons confined in modulation-doped. In0.53Ga0.47As/InP single ...
The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0:53Ga0:47As/InP single symmetric quantum wells.