We review the basics of the extremely thin SOI (ETSOI) technology and how it addresses the main challenges of the CMOS scaling at the 20-nm technology node ...

Abstract— We review the basics of the extremely thin SOI. (ETSOI) technology and how it addresses the main challenges of.

PDF | The authors explored some of the challenges of the extremely thin SOI technology for mainstream CMOS. Faceted RSD was used to minimize parasitic.

Dive into the research topics of 'Extremely thin SOI for system-on-chip applications'. Together they form a unique fingerprint. Sort by; Weight · Alphabetically ...

Oct 20, 2010 · Extremely thin SOI (ETSOI) MOSFET is a viable option for future CMOS scaling owing to superior short-channel control and immunity to random ...

We report high-performance extremely thin SOI MOSFETs fabricated with a channel thickness down to 3.5 nm, sub-20-nm gate length, and contacted gate pitch of 100 ...

Dec 1, 2009 · Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications for IEDM 2009 by K. Cheng et al.

Dive into the research topics of 'Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications'. Together they form a ...

[D-7-1] Extremely Thin SOI (ETSOI) - a Planar CMOS Technology for System-on-chip Applications. K. Cheng1, A. Khakifirooz1, P. Kulkarni1, S. Ponoth1, B. Haran ...