Dec 29, 2015 · A 3-D simulation of substrate currents is crucial to analyze parasitic coupling effects due to minority carrier injection in smart power ICs ...

A 3-D simulation of substrate currents is crucial to analyze parasitic coupling effects due to minority carrier injection in smart power ICs.

A 3-D simulation of substrate currents is crucial to analyze parasitic coupling effects due to minority carrier injection in smart power ICs.

Abstract—A three-dimensional simulation of substrate cur- rents is crucial to analyze parasitic coupling effects due to minority carrier injection in Smart ...

A substrate parasitic extraction methodology is introduced by dividing the IC layout into elementary elements to solve the continuity equation for minority ...

Methodology for 3-D substrate network extraction for spice simulation of parasitic currents in smart power ICs. P Buccella, C Stefanucci, H Zou, Y Moursy, R ...

A new method to efficiently describe parasitic bipolar structures in junction-isolated smart-power ICs is reported. Both two- and three-dimensional ...

Apr 25, 2024 · Methodology for 3-D Substrate Network Extraction for SPICE Simulation of Parasitic Currents in Smart Power ICs. IEEE Trans. Comput. Aided ...

and Maher Kayal, “Methodology for 3-D Substrate Network Extraction for Spice Simulation of Parasitic. Currents in Smart Power ICs”, IEEE Transactions on ...