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This paper proposes an empirical mathematical model to estimate the error rate caused by retention errors on the granularity of block, which is the basic ...
Abstract—The innovative stacking architecture of 3D NAND flash offers a promising solution to increase the capacity of flash.
Jun 21, 2024 · This article builds a mathematical model for estimating the retention errors of flash cells, by considering the factor of layer-to-layer PV in 3D NAND flash ...
Our third technique, Retention Model Aware Reading (ReMAR), reduces retention errors in 3D NAND flash memory by tracking the retention time of the data using ...
Jun 21, 2023 · In this paper, for the first time, we derive the channel probability density function of 3D NAND flash memory by taking major sources of errors.
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Aug 7, 2019 · Problem: 3D NAND error characteristics are not well studied. • Goal: Understand & mitigate 3D NAND errors to improve lifetime.
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Four new techniques to mitigate process variation and early retention loss in 3D NAND flash memory are developed, and can be combined together to significantly ...
Jun 19, 2019 · Thus, this model should be used in situations that can take on complex calculations and need to predict the number of bit errors for high P/E ...
Our third technique, Retention Model Aware Reading (ReMAR), reduces retention errors in 3D NAND flash memory by tracking the retention time of the data ...
This paper discusses the reliability challenges of 3D NAND flash memory and their impact on flash management for enterprise storage applications.