Abstract: Several varactor structures that have been proposed for millimeter- and submillimeter-wave receiver systems are described, and their performance ...
An account is given of new varactor multiplier designs, for mm-wave and sub-mm-wave receiver systems, which have their bases in heterostructure layers and ...
I. INTRODUCTION. The local oscillator source is a critical component in millimeter-wave and submillimeter-wave heterodyne re- ceivers.
Single barrier varactors (SBVs) should have an advantage over GaAs Schottky diode varactors because they can be fabricated on InAs and stacked in a series array ...
Frerking et al. Novel heterojunction varactors. Proc. IEEE. (1992). F.L. Yang. 5nm-gate nanowire FinFET. M.N. Yoder. Wide bandgap semiconductor materials and ...
SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications.
One such device is the Heterojunction Barrier Varactor (HBV) diode. The major problem with this type of device is its low breakdown voltage and excessive.
Several varactor structures that have been proposed for millimeter- and submillimeter-wave receiver systems are described, and their performance in a ...
At millimeter and submillimeter wavelengths a Schottky varactor is the most commonly used multiplier device, although several novel varactors have been proposed.
In this letter, we report on the record performance of GaAs-based heterostructure barrier varactors (HBVs) in tripler circuits.