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In order to reduce such ambipolar behavior, a novel device design based on dual gate material is proposed. ... Further study reveals the fact that the performance ...
Sep 7, 2010 · As the research results show, conventional C-CNFETs suffer from weak subthreshold and off -state performances due to the band-to-band tunneling ...
In order to reduce such ambipolar behavior, a novel device design based on dual gate material is proposed. ... Further study reveals the fact that the performance ...
Jul 20, 2010 · Further study reveals that the performance of the proposed design depends highly on the choice of tuning voltage value, which should be paid ...
Consequently, device structures based on three novel strategies, viz., an electrostatic doping strategy, a dual-gate-material strategy, and a staircase doping ...
Abstract: Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS- like Carbon Nanotube Field Effect ...
Consequently, device structures based on three novel strategies, viz., an electrostatic doping strategy, a dual-gate-material strategy, and a staircase doping ...
Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to ...
To make an exact research into the performance of conventional MOS-like carbon nanotube field-effect transistors (C-CNFETs) with realistic contacts, ...
Abstract and Figures ; CNT diameter and oxide thickness in CNFETs allows one to. obtain not only abrupt change of the device current Idas a. function of the gate ...