Puyang
Puyang Cai. 北京大学. 在 pku.edu.cn 的电子邮件经过验证. ferroelectrics. 文章引用次数开放获取的出版物数量. 标题. 排序. 按引用次数排序按年份排序按标题排序.
Puyang Cai | IEEE Xplore Author Details. Puyang Cai. Affiliation. School of Integrated Circuits, Peking University, Beijing, China. Publication Topics.
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Browsing by Author Cai,Puyang ; 2023, A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics · Feng,Ning; Ji,Ning; Zhang,Fangxing; Li,Yu; Cai, ...
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Deep Understanding of Reliability in Hf-based FeFET during Bipolar ...
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This work is focused on two key reliability issues: the read-after-write delay and memory window degradation under bipolar pulse operation.
Request PDF | On Jun 26, 2023, Puyang Cai and others published Characterization of Field Cycling Fatigue in HfZrO x Ferroelectric Capacitors | Find, ...
Nov 12, 2019 · We present recent advances in large scale devices and circuits based on TMD films, including logic, memory, optoelectronic and analog devices.
Jul 15, 2024 · Puyang Cai,; Lining Zhang,; Runsheng Wang,; Ru Huang. Ning Ji. School of Electronic and Computer Engineering, Peking University. Corresponding ...
Nov 20, 2023 · Here we report the coexistence of magnetic moment-dependent (MD) and magnetic field-driven (FD) unidirectional magnetoresistance (UMR) effects ...
