Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy. R Sugie, K Kosaka, H Seki, H Hashimoto, M ...
Ryuichi Sugie
Research interests: Semiconductor, Raman, and Luminescence
His research interest includes the basic physics in semiconductors, optimization of device process parameters using Raman and luminescence, failure analysis of ...
List of computer science publications by Ryuichi Sugie.
Research Interests · scanning electron microscopy · temperature measurement · cathodoluminescence · ion implantation · silicon ...
Fingerprints · Published: 08 May 2024 in Journal of Applied Physics · Published: 23 October 2023 in Japanese Journal of Applied Physics · Published: 06 February ...
Ryuichi Sugie | IEEE Xplore Author Details. Ryuichi Sugie. Affiliation. SANYO Electric Company Limited, Gifu, Japan Toray Research Center, Inc., Otsu, Shiga ...
by Ryuichi Sugie. Non destructive Si die residual stress was investigated with Raman spectroscopy. The dies were assembled on the organic substrates by flip ...
Ultra-thin wafer is indispensable for bumpless 3D stacking. To know the thinning damage in detail, an atomic level defects occurred during wafer thinning and ...
Ryuichi Sugie · Theoretical and Experimental Raman Study for Mechanical Stress in Die-attach Process.
We used 3D micro-X-ray topography (3D μ-XRT) to construct a 3D structure of the threading screw dislocations (TSDs) in 4H-SiC.