Abstract: Physically-based models of hot-carrier stress and dielectric field-enhanced thermal damage have been incorporated in the framework of a TCAD tool ...

A TCAD tool was used to correlate the electrical parameters drift to local temperatures and electric fields [8], but it could not be applied to predict ...

Physically-based models of hot-carrier stress and dielectric field-enhanced thermal damage have been incorporated in the framework of a TCAD tool with the ...

Physically-based models of hot-carrier stress and dielectric field-enhanced thermal damage have been incorporated in the framework of a TCAD tool with the ...

A combined experimental and simulation analysis of the degradation mechanisms induced by hot carriers in a silicon-based split-gate n-channel LDMOS transistor ...

Mar 27, 2022 · This analysis establishes the robustness and identifies the limitations of TCAD modeling of HCD in LDMOS devices.

In this review, the electrical characteristics of the STI-based LDMOS transistors are investigated over an extended range of operating conditions through ...

Oct 22, 2024 · Physically based models of hot-carrier stress and dielectric-field-enhanced thermal damage have been incorporated into a TCAD tool with the ...

The hot-carrier stress regime has been fully reproduced in the frame of TCAD simulations by using physics-based models able to provide the degradation kinetics.

TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors · Engineering, Physics. Microelectronics Reliability · 2020.