… of Vacuum Science & Technology B: …, Jan 1, 2006
In this article, the effect of the gate tunneling current in ultrathin gate-oxide metal-oxide-sem... more In this article, the effect of the gate tunneling current in ultrathin gate-oxide metal-oxide-semiconductor (MOS) devices of an effective gate length of is studied using a device simulation. A dramatic increase of gate and reverse-biased junction band-to-band-tunneling leakages in scaled ...
Abstract This paper presents a new scheme of designing a 16-bit Digital to Analog Converter with ... more Abstract This paper presents a new scheme of designing a 16-bit Digital to Analog Converter with a Supply voltage of 1.2 Volts. The proposed design combines three different architectures in a novel way so as to achieve low power and low area requirements of the present day ...
… of Vacuum Science & Technology B: …, Jan 1, 2006
In this article, the effect of the gate tunneling current in ultrathin gate-oxide metal-oxide-sem... more In this article, the effect of the gate tunneling current in ultrathin gate-oxide metal-oxide-semiconductor (MOS) devices of an effective gate length of is studied using a device simulation. A dramatic increase of gate and reverse-biased junction band-to-band-tunneling leakages in scaled ...
Abstract This paper presents a new scheme of designing a 16-bit Digital to Analog Converter with ... more Abstract This paper presents a new scheme of designing a 16-bit Digital to Analog Converter with a Supply voltage of 1.2 Volts. The proposed design combines three different architectures in a novel way so as to achieve low power and low area requirements of the present day ...
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