In this letter, CMOS-compatible Ni/HfO2/TiN resistive random access memory stacks demonstrated at... more In this letter, CMOS-compatible Ni/HfO2/TiN resistive random access memory stacks demonstrated attractive unipolar switching properties, showing >103 endurance and long retention at 150 �C. The Ni bottom electrode (BE) improved the switching yield over the NiSiPt BE. To better understand the unipolar forming mechanism, ab initio simulation and time of flight-secondary ion mass spectroscopy were utilized. Compared to the NiSiPt BE, Ni BE gives larger Ni diffusion in the HfO2 and lower formation enthalpy of Ni2þ species during electrical forming. Both the electrical and physical results supported a Ni-injection mechanism for the filament formation.
Digest of Technical Papers - Symposium on VLSI Technology
By means of conductance modeling, physical characterization, and stack engineering in 80nm-wide c... more By means of conductance modeling, physical characterization, and stack engineering in 80nm-wide contact-hole cells, we clearly evidence for TiNNiONi RRAM systems that the reset switching corresponds to a partial Ni-rich filament constriction due to anodic oxidation mechanism at the interface with the Ni anode
In this letter, CMOS-compatible Ni/HfO2/TiN resistive random access memory stacks demonstrated at... more In this letter, CMOS-compatible Ni/HfO2/TiN resistive random access memory stacks demonstrated attractive unipolar switching properties, showing >103 endurance and long retention at 150 �C. The Ni bottom electrode (BE) improved the switching yield over the NiSiPt BE. To better understand the unipolar forming mechanism, ab initio simulation and time of flight-secondary ion mass spectroscopy were utilized. Compared to the NiSiPt BE, Ni BE gives larger Ni diffusion in the HfO2 and lower formation enthalpy of Ni2þ species during electrical forming. Both the electrical and physical results supported a Ni-injection mechanism for the filament formation.
Digest of Technical Papers - Symposium on VLSI Technology
By means of conductance modeling, physical characterization, and stack engineering in 80nm-wide c... more By means of conductance modeling, physical characterization, and stack engineering in 80nm-wide contact-hole cells, we clearly evidence for TiNNiONi RRAM systems that the reset switching corresponds to a partial Ni-rich filament constriction due to anodic oxidation mechanism at the interface with the Ni anode
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Papers by Bogdan Govoreanu