A polycrystalline double perovskite Nd2NiMnO6 (NNM) has been synthesized through the solid-state ... more A polycrystalline double perovskite Nd2NiMnO6 (NNM) has been synthesized through the solid-state reaction method. Powder x-ray diffraction data can be indexed by the space group P21/n. Double magnetization transition temperatures at 105.12 K and 193.04 K are observed from temperature-dependent magnetization curve and can be ascribed to Ni3+-O-Mn3+ and Ni2+-O-Mn4+ superexchange interactions, respectively. The effective magnetic moment, Curie constant C and paramagnetic Curie-Weiss temperature θ are calculated to be 6.023μB/f.u., 4.529(4) emu K mol-1 Oe-1 and 191.1(9) K, respectively. Mixed valence of Mn ion is further evidenced by x-ray photoelectron spectra and the mole ratio of Mn3+/Mn4+ is determined to be 19.53 : 81.47. The dielectric relaxor behaviour is found in NNM and follows the Vogel-Fulcher relationship with Ea = 0.0264 eV, Tf = 283.2 K and f0 = 4.66 × 108 Hz. The delocalized carriers in the semiconducting sample may explain the origin of dielectric relaxation.
A polycrystalline double perovskite Nd2NiMnO6 (NNM) has been synthesized through the solid-state ... more A polycrystalline double perovskite Nd2NiMnO6 (NNM) has been synthesized through the solid-state reaction method. Powder x-ray diffraction data can be indexed by the space group P21/n. Double magnetization transition temperatures at 105.12 K and 193.04 K are observed from temperature-dependent magnetization curve and can be ascribed to Ni3+-O-Mn3+ and Ni2+-O-Mn4+ superexchange interactions, respectively. The effective magnetic moment, Curie constant C and paramagnetic Curie-Weiss temperature θ are calculated to be 6.023μB/f.u., 4.529(4) emu K mol-1 Oe-1 and 191.1(9) K, respectively. Mixed valence of Mn ion is further evidenced by x-ray photoelectron spectra and the mole ratio of Mn3+/Mn4+ is determined to be 19.53 : 81.47. The dielectric relaxor behaviour is found in NNM and follows the Vogel-Fulcher relationship with Ea = 0.0264 eV, Tf = 283.2 K and f0 = 4.66 × 108 Hz. The delocalized carriers in the semiconducting sample may explain the origin of dielectric relaxation.
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