In this paper, we present a compact model for surface potential and drain current in transition m... more In this paper, we present a compact model for surface potential and drain current in transition metal dichalcogenide (TMD) channel material-based n-type and p-type FETs. The model considers 2-D density of states and Fermi-Dirac statistics along with drift-diffusion transport model and includes velocity saturation and trap state effects. The developed model has been implemented in Verilog-A and is applicable for symmetric double gate as well as top-gated TMD-on-insulator FETs. The presented model is extensively validated with simulation as well as experimental data for different TMD materials-based FETs and shows excellent agreement with both the simulation and the experimental data. We further validate the model at circuit level using experimental data of MoS 2 FET-based inverter. Index Terms-2-D semiconductor, circuit simulation, compact model, molybdenum disulphide (MoS 2), molybdenum ditelluride (MoTe 2), transition metal dichalcogenide (TMD), tungsten diselenide (WSe 2). I. INTRODUCTION F OR the post-Silicon era, potential channel material alternatives being explored are III-V materials, Germanium (Ge), and 2-D materials, including transition metal dichalcogenides (TMDs) [1]-[8]. TMDs, such as MoS 2 , WSe 2 , MoTe 2 , and so on, are attractive options for channel material in scaled devices for low power electronic and other applications [9]-[12]. The TMD materials can be grown from single layer to multiple layers and their electronic properties vary with the number of layers [13], [14]. The feasibility of layered material growth in the channel leads to better gate control, and therefore, is promising for advanced technology nodes.
Agradeço primeiramente a Deus, por ter me concedido saúde, perseverança e dedicação para conclusã... more Agradeço primeiramente a Deus, por ter me concedido saúde, perseverança e dedicação para conclusão de mais esta etapa. A CAPES, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, pelo fomento ao projeto de pesquisa. Ao meu orientador, Prof. Dr. Murilo Araujo Romero, por ter me aceitado como seu orientando, pela paciência, pelas diretrizes, correções e conselhos que contribuirão muito para o meu futuro acadêmico. Ao meu coorientador Ulysses Rondina Duarte, pela dedicação, paciência, disponibilidade, conselhos, diretrizes e correções, muito obrigado. Aos meus pais Neilton e Ercília, por sempre me apoiarem, me amarem e ajudarem, por ser minha fortaleza quando mais preciso. A minha princesa, minha razão de viver, minha companheira, minha esposa Daniela Matias Cerri Celino, pela compreensão, pelo amor e carinho, pela paciência, amizade, companheirismo, por sonhar junto, em fim, por tudo, minha metade. Aos meus irmãos Danillo e Darlan, por sonharem comigo, por me amarem, por ser família, sempre. Aos meus Tios Paulo e Rosilene, muitíssimo obrigado por tudo, por me acolherem na época de cursinho..., pelos conselhos, pela paciência, por tudo, muito obrigado. Aos meus cunhados, Charles, Bruno e Paulo, pelo socorro prestado a minha esposa na minha ausência. A toda minha família Ricardo e Celino. Aos meus apadrinhados, Brother Thiago e Rayssa. Ao meu colega do laboratório, Adelcio. A Prof. Regiani Ragi, pelo projeto de doutorado. Por fim, agradeço a todos os meus professores do mestrado, por todo conhecimento, experiência de vida e ensinados que levarei durante a minha carreira acadêmica.
Abstract In this work, we investigated a novel wavelength division multiplexing passive optical n... more Abstract In this work, we investigated a novel wavelength division multiplexing passive optical network (WDM-PON) configuration, based on cascaded reflective semiconductor optical amplifiers (RSOA) data erasure for combined self-seeding and wavelength reuse. Improved performance is achieved by enhanced erasure efficiency using a self-seeded double-RSOA cavity at the optical line terminal (OLT) and cascaded RSOAs at the optical network terminal (ONT). To carry out the study, our experimental results for our earlier combined topology layout operating at a symmetric transmission were used to validate the simulation framework for the proposed double-RSOA erasure configuration. Using our original single-cavity self-seeding WDM-PON architecture as a benchmark, downstream extinction ratio ( E R D ) margins of 6.5 dB and 9.0 dB are obtained, for generating self-seeded downstream signals and upstream remodulation, respectively. Also, bidirectional transmission of 1.25 Gb/s over links reach up to 45 km is achieved by the double-RSOA cavity, surpassing in 25 km our original combined topology. The results indicated that our proposition effectively addresses a fundamental trade-off for WDM-PONs based on the wavelength reuse and/or self-seeding techniques. Specifically, the double erasure procedure allows the use of relatively high levels of E R D , thereby providing improved bit error rate (BER) at the ONT, while assuring high-quality generation of the self-seeding carrier and loopback operation.
Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Oct 1, 2018
WDM-PON has been considered a promising solution for future fronthaul links concerning new mobile... more WDM-PON has been considered a promising solution for future fronthaul links concerning new mobile networks applications. However, in order to avoid inventory problems and reduce operation costs, there is a need for colorless sources, where the same basic optical source can be used regardless of the desired wavelength. Also, the digital RoF scheme, which has been employed so far, might require a bandwidth that is prohibitive even for optical fiber links. In this paper, we propose and numerically investigate a bidirectional colorless WDM-PON fronthaul transporting analog RoF signals as an alternative to meet these demands. All simulations were performed using a framework calibrated with experimental data. For the downstream, we employ a double-cavity self-seeding technique, while the upstream is performed by a cascaded-RSOAs carrier-reuse approach. BER and EVM simulation analysis are presented for various data rates, modulations formats and RF bands ranging from 1 to 5 GHz, demonstrating the feasibility of our proposed topology as a novel fronthaul approach.
This paper presents an up/down converter double-balanced Gilbert cell mixer for frequencies of 43... more This paper presents an up/down converter double-balanced Gilbert cell mixer for frequencies of 433, 870 and 928 MHz in the ISM band (industrial, scientific and medical). This mixer was designed with the on-semiconductor (former AMIS) 0.7μm CMOS technology. The Gilbert cell topology was selected due to its good figure of merit (FOM), which takes into account parameters such as the conversion gain (CG), isolation between the input ports, linearity and the noise figure. This mixer provides frequency translation by means of a true multiplication on four quadrants. The simulations showed a total power consumption of 3mW from a power supply of 5V, a CG of 10.5dB, an input referred third-order input intercept point (IIP3) of 29.72dBm and an input referred 1-dB compression point (IP1dB) of 13.15dBm. This paper also presents a comparison for the three bands in order to confirm the scalability and suitability of the mixer implemented. The target application of this mixer is to provide communication to/from intra-corporal communication devices.
2021 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC), 2021
WDM-PON is currently being considered for the standardization of 50G-PON, particularly for the fr... more WDM-PON is currently being considered for the standardization of 50G-PON, particularly for the fronthaul deployment of 5G networks. However, to be a viable candidate for this demanding application WDM-PON configuration must offer reduced costs and be free of inventory problems. The solution is to employ colorless sources, where the same hardware can be used regardless of the wavelength. In this regard, this paper presents a WDM-PON topology employing tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs) and a carrier reuse scheme based on Reflective Semiconductor Optical Amplifiers (RSOAs) as a 5G Analog Fronthaul configuration. Error Vector Magnitude (EVM) results are within the specifications imposed by 3GPP when operating at 3.5 GHz with 1.25 Gbps and 26 GHz with 10 Gbps.
ISSNIP Biosignals and Biorobotics Conference 2011, 2011
Page 1. Experimental Evidences for Visual Evoked Potentials with Stimuli Beyond the Conscious Per... more Page 1. Experimental Evidences for Visual Evoked Potentials with Stimuli Beyond the Conscious Perception Threshold Sérgio G. Ramos-Júnior 1, Daniel R. Celino 1, Fáuzi F. Rodor 1, Moisés RN Ribeiro 1, Sandra MT Müller ...
This paper presents a fully analytical model for the current-voltage (I–V) characteristics of Res... more This paper presents a fully analytical model for the current-voltage (I–V) characteristics of Resonant Tunneling Diodes. Based on Tsu-Esaki formalism, we consider the full electrical potential distribution in the structure, including the space charge regions at the emitter and collector layers. In addition, we account for the scattering suffered by carriers when tunneling through the double-barrier region, as a function of the applied bias voltage. These considerations improve the accuracy of the proposed model when compared with other approaches while keeping it physics based and fully analytical. Finally, the model is validated with experimental and numericaldata, demonstrating its feasibility for applications in circuit simulation environments.
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro), 2017
This paper presents an up/down converter double-balanced Gilbert cell mixer for frequencies of 43... more This paper presents an up/down converter double-balanced Gilbert cell mixer for frequencies of 433, 870 and 928 MHz in the ISM band (industrial, scientific and medical). This mixer was designed with the on-semiconductor (former AMIS) 0.7μm CMOS technology. The Gilbert cell topology was selected due to its good figure of merit (FOM), which takes into account parameters such as the conversion gain (CG), isolation between the input ports, linearity and the noise figure. This mixer provides frequency translation by means of a true multiplication on four quadrants. The simulations showed a total power consumption of 3mW from a power supply of 5V, a CG of 10.5dB, an input referred third-order input intercept point (IIP3) of 29.72dBm and an input referred 1-dB compression point (IP1dB) of 13.15dBm. This paper also presents a comparison for the three bands in order to confirm the scalability and suitability of the mixer implemented. The target application of this mixer is to provide communication to/from intra-corporal communication devices.
ISSNIP Biosignals and Biorobotics Conference 2011, 2011
Severe disabled children have little chance of environmental and social exploration and discovery... more Severe disabled children have little chance of environmental and social exploration and discovery, and due to this lack of interaction and independency, it may lead to an idea that they are unable to do anything by themselves. Trying to help these children on this situation, educational robotics can offer and aid, once it can give them a certain degree of independency in exploration of environment. The system developed in this work allows the child to transmit the commands to a robot. Sensors placed on the child's body can obtain information from head movement or muscle signals to command the robot to carry out tasks. With the use of this system, the disabled children get a better cognitive development and social interaction, balancing in a certain way, the negative effects of their disabilities.
Agradeço primeiramente a Deus, por ter me concedido saúde, perseverança e dedicação para conclusã... more Agradeço primeiramente a Deus, por ter me concedido saúde, perseverança e dedicação para conclusão de mais esta etapa. A CAPES, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, pelo fomento ao projeto de pesquisa. Ao meu orientador, Prof. Dr. Murilo Araujo Romero, por ter me aceitado como seu orientando, pela paciência, pelas diretrizes, correções e conselhos que contribuirão muito para o meu futuro acadêmico. Ao meu coorientador Ulysses Rondina Duarte, pela dedicação, paciência, disponibilidade, conselhos, diretrizes e correções, muito obrigado. Aos meus pais Neilton e Ercília, por sempre me apoiarem, me amarem e ajudarem, por ser minha fortaleza quando mais preciso. A minha princesa, minha razão de viver, minha companheira, minha esposa Daniela Matias Cerri Celino, pela compreensão, pelo amor e carinho, pela paciência, amizade, companheirismo, por sonhar junto, em fim, por tudo, minha metade. Aos meus irmãos Danillo e Darlan, por sonharem comigo, por me amarem, por ser família, sempre. Aos meus Tios Paulo e Rosilene, muitíssimo obrigado por tudo, por me acolherem na época de cursinho..., pelos conselhos, pela paciência, por tudo, muito obrigado. Aos meus cunhados, Charles, Bruno e Paulo, pelo socorro prestado a minha esposa na minha ausência. A toda minha família Ricardo e Celino. Aos meus apadrinhados, Brother Thiago e Rayssa. Ao meu colega do laboratório, Adelcio. A Prof. Regiani Ragi, pelo projeto de doutorado. Por fim, agradeço a todos os meus professores do mestrado, por todo conhecimento, experiência de vida e ensinados que levarei durante a minha carreira acadêmica.
In this paper, we present a compact model for surface potential and drain current in transition m... more In this paper, we present a compact model for surface potential and drain current in transition metal dichalcogenide (TMD) channel material-based n-type and p-type FETs. The model considers 2-D density of states and Fermi-Dirac statistics along with drift-diffusion transport model and includes velocity saturation and trap state effects. The developed model has been implemented in Verilog-A and is applicable for symmetric double gate as well as top-gated TMD-on-insulator FETs. The presented model is extensively validated with simulation as well as experimental data for different TMD materials-based FETs and shows excellent agreement with both the simulation and the experimental data. We further validate the model at circuit level using experimental data of MoS 2 FET-based inverter. Index Terms-2-D semiconductor, circuit simulation, compact model, molybdenum disulphide (MoS 2), molybdenum ditelluride (MoTe 2), transition metal dichalcogenide (TMD), tungsten diselenide (WSe 2). I. INTRODUCTION F OR the post-Silicon era, potential channel material alternatives being explored are III-V materials, Germanium (Ge), and 2-D materials, including transition metal dichalcogenides (TMDs) [1]-[8]. TMDs, such as MoS 2 , WSe 2 , MoTe 2 , and so on, are attractive options for channel material in scaled devices for low power electronic and other applications [9]-[12]. The TMD materials can be grown from single layer to multiple layers and their electronic properties vary with the number of layers [13], [14]. The feasibility of layered material growth in the channel leads to better gate control, and therefore, is promising for advanced technology nodes.
Agradeço primeiramente a Deus, por ter me concedido saúde, perseverança e dedicação para conclusã... more Agradeço primeiramente a Deus, por ter me concedido saúde, perseverança e dedicação para conclusão de mais esta etapa. A CAPES, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, pelo fomento ao projeto de pesquisa. Ao meu orientador, Prof. Dr. Murilo Araujo Romero, por ter me aceitado como seu orientando, pela paciência, pelas diretrizes, correções e conselhos que contribuirão muito para o meu futuro acadêmico. Ao meu coorientador Ulysses Rondina Duarte, pela dedicação, paciência, disponibilidade, conselhos, diretrizes e correções, muito obrigado. Aos meus pais Neilton e Ercília, por sempre me apoiarem, me amarem e ajudarem, por ser minha fortaleza quando mais preciso. A minha princesa, minha razão de viver, minha companheira, minha esposa Daniela Matias Cerri Celino, pela compreensão, pelo amor e carinho, pela paciência, amizade, companheirismo, por sonhar junto, em fim, por tudo, minha metade. Aos meus irmãos Danillo e Darlan, por sonharem comigo, por me amarem, por ser família, sempre. Aos meus Tios Paulo e Rosilene, muitíssimo obrigado por tudo, por me acolherem na época de cursinho..., pelos conselhos, pela paciência, por tudo, muito obrigado. Aos meus cunhados, Charles, Bruno e Paulo, pelo socorro prestado a minha esposa na minha ausência. A toda minha família Ricardo e Celino. Aos meus apadrinhados, Brother Thiago e Rayssa. Ao meu colega do laboratório, Adelcio. A Prof. Regiani Ragi, pelo projeto de doutorado. Por fim, agradeço a todos os meus professores do mestrado, por todo conhecimento, experiência de vida e ensinados que levarei durante a minha carreira acadêmica.
Abstract In this work, we investigated a novel wavelength division multiplexing passive optical n... more Abstract In this work, we investigated a novel wavelength division multiplexing passive optical network (WDM-PON) configuration, based on cascaded reflective semiconductor optical amplifiers (RSOA) data erasure for combined self-seeding and wavelength reuse. Improved performance is achieved by enhanced erasure efficiency using a self-seeded double-RSOA cavity at the optical line terminal (OLT) and cascaded RSOAs at the optical network terminal (ONT). To carry out the study, our experimental results for our earlier combined topology layout operating at a symmetric transmission were used to validate the simulation framework for the proposed double-RSOA erasure configuration. Using our original single-cavity self-seeding WDM-PON architecture as a benchmark, downstream extinction ratio ( E R D ) margins of 6.5 dB and 9.0 dB are obtained, for generating self-seeded downstream signals and upstream remodulation, respectively. Also, bidirectional transmission of 1.25 Gb/s over links reach up to 45 km is achieved by the double-RSOA cavity, surpassing in 25 km our original combined topology. The results indicated that our proposition effectively addresses a fundamental trade-off for WDM-PONs based on the wavelength reuse and/or self-seeding techniques. Specifically, the double erasure procedure allows the use of relatively high levels of E R D , thereby providing improved bit error rate (BER) at the ONT, while assuring high-quality generation of the self-seeding carrier and loopback operation.
Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Oct 1, 2018
WDM-PON has been considered a promising solution for future fronthaul links concerning new mobile... more WDM-PON has been considered a promising solution for future fronthaul links concerning new mobile networks applications. However, in order to avoid inventory problems and reduce operation costs, there is a need for colorless sources, where the same basic optical source can be used regardless of the desired wavelength. Also, the digital RoF scheme, which has been employed so far, might require a bandwidth that is prohibitive even for optical fiber links. In this paper, we propose and numerically investigate a bidirectional colorless WDM-PON fronthaul transporting analog RoF signals as an alternative to meet these demands. All simulations were performed using a framework calibrated with experimental data. For the downstream, we employ a double-cavity self-seeding technique, while the upstream is performed by a cascaded-RSOAs carrier-reuse approach. BER and EVM simulation analysis are presented for various data rates, modulations formats and RF bands ranging from 1 to 5 GHz, demonstrating the feasibility of our proposed topology as a novel fronthaul approach.
This paper presents an up/down converter double-balanced Gilbert cell mixer for frequencies of 43... more This paper presents an up/down converter double-balanced Gilbert cell mixer for frequencies of 433, 870 and 928 MHz in the ISM band (industrial, scientific and medical). This mixer was designed with the on-semiconductor (former AMIS) 0.7μm CMOS technology. The Gilbert cell topology was selected due to its good figure of merit (FOM), which takes into account parameters such as the conversion gain (CG), isolation between the input ports, linearity and the noise figure. This mixer provides frequency translation by means of a true multiplication on four quadrants. The simulations showed a total power consumption of 3mW from a power supply of 5V, a CG of 10.5dB, an input referred third-order input intercept point (IIP3) of 29.72dBm and an input referred 1-dB compression point (IP1dB) of 13.15dBm. This paper also presents a comparison for the three bands in order to confirm the scalability and suitability of the mixer implemented. The target application of this mixer is to provide communication to/from intra-corporal communication devices.
2021 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC), 2021
WDM-PON is currently being considered for the standardization of 50G-PON, particularly for the fr... more WDM-PON is currently being considered for the standardization of 50G-PON, particularly for the fronthaul deployment of 5G networks. However, to be a viable candidate for this demanding application WDM-PON configuration must offer reduced costs and be free of inventory problems. The solution is to employ colorless sources, where the same hardware can be used regardless of the wavelength. In this regard, this paper presents a WDM-PON topology employing tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs) and a carrier reuse scheme based on Reflective Semiconductor Optical Amplifiers (RSOAs) as a 5G Analog Fronthaul configuration. Error Vector Magnitude (EVM) results are within the specifications imposed by 3GPP when operating at 3.5 GHz with 1.25 Gbps and 26 GHz with 10 Gbps.
ISSNIP Biosignals and Biorobotics Conference 2011, 2011
Page 1. Experimental Evidences for Visual Evoked Potentials with Stimuli Beyond the Conscious Per... more Page 1. Experimental Evidences for Visual Evoked Potentials with Stimuli Beyond the Conscious Perception Threshold Sérgio G. Ramos-Júnior 1, Daniel R. Celino 1, Fáuzi F. Rodor 1, Moisés RN Ribeiro 1, Sandra MT Müller ...
This paper presents a fully analytical model for the current-voltage (I–V) characteristics of Res... more This paper presents a fully analytical model for the current-voltage (I–V) characteristics of Resonant Tunneling Diodes. Based on Tsu-Esaki formalism, we consider the full electrical potential distribution in the structure, including the space charge regions at the emitter and collector layers. In addition, we account for the scattering suffered by carriers when tunneling through the double-barrier region, as a function of the applied bias voltage. These considerations improve the accuracy of the proposed model when compared with other approaches while keeping it physics based and fully analytical. Finally, the model is validated with experimental and numericaldata, demonstrating its feasibility for applications in circuit simulation environments.
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro), 2017
This paper presents an up/down converter double-balanced Gilbert cell mixer for frequencies of 43... more This paper presents an up/down converter double-balanced Gilbert cell mixer for frequencies of 433, 870 and 928 MHz in the ISM band (industrial, scientific and medical). This mixer was designed with the on-semiconductor (former AMIS) 0.7μm CMOS technology. The Gilbert cell topology was selected due to its good figure of merit (FOM), which takes into account parameters such as the conversion gain (CG), isolation between the input ports, linearity and the noise figure. This mixer provides frequency translation by means of a true multiplication on four quadrants. The simulations showed a total power consumption of 3mW from a power supply of 5V, a CG of 10.5dB, an input referred third-order input intercept point (IIP3) of 29.72dBm and an input referred 1-dB compression point (IP1dB) of 13.15dBm. This paper also presents a comparison for the three bands in order to confirm the scalability and suitability of the mixer implemented. The target application of this mixer is to provide communication to/from intra-corporal communication devices.
ISSNIP Biosignals and Biorobotics Conference 2011, 2011
Severe disabled children have little chance of environmental and social exploration and discovery... more Severe disabled children have little chance of environmental and social exploration and discovery, and due to this lack of interaction and independency, it may lead to an idea that they are unable to do anything by themselves. Trying to help these children on this situation, educational robotics can offer and aid, once it can give them a certain degree of independency in exploration of environment. The system developed in this work allows the child to transmit the commands to a robot. Sensors placed on the child's body can obtain information from head movement or muscle signals to command the robot to carry out tasks. With the use of this system, the disabled children get a better cognitive development and social interaction, balancing in a certain way, the negative effects of their disabilities.
Agradeço primeiramente a Deus, por ter me concedido saúde, perseverança e dedicação para conclusã... more Agradeço primeiramente a Deus, por ter me concedido saúde, perseverança e dedicação para conclusão de mais esta etapa. A CAPES, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, pelo fomento ao projeto de pesquisa. Ao meu orientador, Prof. Dr. Murilo Araujo Romero, por ter me aceitado como seu orientando, pela paciência, pelas diretrizes, correções e conselhos que contribuirão muito para o meu futuro acadêmico. Ao meu coorientador Ulysses Rondina Duarte, pela dedicação, paciência, disponibilidade, conselhos, diretrizes e correções, muito obrigado. Aos meus pais Neilton e Ercília, por sempre me apoiarem, me amarem e ajudarem, por ser minha fortaleza quando mais preciso. A minha princesa, minha razão de viver, minha companheira, minha esposa Daniela Matias Cerri Celino, pela compreensão, pelo amor e carinho, pela paciência, amizade, companheirismo, por sonhar junto, em fim, por tudo, minha metade. Aos meus irmãos Danillo e Darlan, por sonharem comigo, por me amarem, por ser família, sempre. Aos meus Tios Paulo e Rosilene, muitíssimo obrigado por tudo, por me acolherem na época de cursinho..., pelos conselhos, pela paciência, por tudo, muito obrigado. Aos meus cunhados, Charles, Bruno e Paulo, pelo socorro prestado a minha esposa na minha ausência. A toda minha família Ricardo e Celino. Aos meus apadrinhados, Brother Thiago e Rayssa. Ao meu colega do laboratório, Adelcio. A Prof. Regiani Ragi, pelo projeto de doutorado. Por fim, agradeço a todos os meus professores do mestrado, por todo conhecimento, experiência de vida e ensinados que levarei durante a minha carreira acadêmica.
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