2018 IEEE Electron Devices Kolkata Conference (EDKCON)
Differential conductance of submicron HEMT is analytically investigated as a function of drain bi... more Differential conductance of submicron HEMT is analytically investigated as a function of drain bias for different structural parameters and parasitic effects. Simulation is carried out for two different substrate based devices, Si and sapphire, and comparative study is carried out for those structural parameters at which VGS provides maximum transconductance. Poisson's equation and carrier density equations are simultaneously solved to get drain current variations and parasitic effects are invoked through boundary conditions for realistic results. Result speaks that effect of threshold voltage is negligible on sapphire based device over a wider range of horizontal bias. Nanometric channel length provides almost constant conductance profile with insignificant magnitude.
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)
Based on the climatic conditions like temperature and humidity of the soil, a novel robot is desi... more Based on the climatic conditions like temperature and humidity of the soil, a novel robot is designed which can assist farmers for judging the requirement of water and fertilizer. An efficient algorithm is made for this purpose, which sets the threshold level for decision making purpose for different requisites; and also plot the real-time data based on the pre-defined optimum level. Owing to its movement capability, it is able to provide the water and fertilizer at the specific places till the reference level is reached, and then moves thereafter. It also uses remote sensing for determining insect stress and applies insecticides as per requirement. In our agricultural-dominated country, the present solution is a much-needed solution for harvesting problems.
Lowest two quantum states of a double-well-triple-barrier structure are numerically analyzed for ... more Lowest two quantum states of a double-well-triple-barrier structure are numerically analyzed for Pöschl-Teller potential profile. Kane-type band nonparabolicity of first order is considered for rational replication purpose, and effective mass mismatch between well and barrier layers are included in the computation following the BenDaniel Duke boundary conditions. Transmission coefficient is plotted as a function of input energy flux, and peaks are identified for eigenstate determination in presence and absence of external electric field. Results are compared with that obtained for ideal rectangular geometry, and better quasi-peak characteristics speaks in favor of the proposed structure for photodetector application, where tailoring of subband energy can be achieved by means of structural parameter variations.
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)
Ripple factor of ternary photonic bandpass filter is analytically computed around 1.55 μm under n... more Ripple factor of ternary photonic bandpass filter is analytically computed around 1.55 μm under normal incidence of electromagnetic wave. Parallel nanorod is considered as the metamaterial for the simulation purpose with air gap, and transfer matrix technique is adopted for the investigation. Improved noise rejection characteristics are obtained compared to the published results for positive index materials. Different structural parameters are varied to observe the bandwidth as well as noise variation for optimized performance. The structure is taken as defected one, where the density of point defect is within the limit of fabrication, so that the simulated findings can be taken as realistic.
A novel package is proposed using JAVA-GUI platform for analyzing filter performance with one-dim... more A novel package is proposed using JAVA-GUI platform for analyzing filter performance with one-dimensional photonic crystal. With this package, user can provide the required structural parameters (within fabrication limit) for maximum 11 layers 1D structure; and bandpass characteristics can be obtained for both the polarized input conditions. Results are provided for SiO2-air composition, and can be obtained for other material systems with positive refractive indices. Package is useful prior to fabrication for optimizing filter performance.
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 2020
Lower return loss and isolation loss of 1-bit RF MEMS switch is analytically investigated for dif... more Lower return loss and isolation loss of 1-bit RF MEMS switch is analytically investigated for different dielectric materials over the L band to K band. Both unactuated as well as actuated conditions are taken care for simulation purpose, where overlap area is kept constant. Simulated findings reveal that both the losses are significantly reduced for lower dielectric constant material (SiO2) compared to higher permittivity (Si3N4) upto 30% which is an indirect estimation for measuring upstate and down-state capacitances. Results are also compared with existing data from published literature which speaks in favor of the present work for phase-shifter design.
In this paper, an efficient synthesis technique for high-speed multivalued ALU for \((2^{p} \pm q... more In this paper, an efficient synthesis technique for high-speed multivalued ALU for \((2^{p} \pm q)\) radix system is proposed with reduced complexity. Addition, subtraction, increment/decrement and basic logical operations are implemented just by rotation of the matrix or shifting of a few elements, and thus minimum number of computational steps is involved; which saves CPU time usage. Matrix representation for all the operations is provided in a tabular manner with pseudocode for the proposed \((2^{p} \pm q)\) radix system in order to understand the detailed procedure of operations. All the pseudocodes have been verified using Xilinx ISE 14.1 simulator using Vertex-7 XC7VX330t device. Lower computation time and complexity make the ALU efficient than those already proposed in the available literature.
Quantum-confined states of electrons inside quantum ring-like structure have been analytically in... more Quantum-confined states of electrons inside quantum ring-like structure have been analytically investigated subjected to crossed electromagnetic field in order to study the effect of field quantization. Schrodinger equation without considering time-dependency factor is solved with boundary conditions based on the cylindrical geometry of the structure, and lowest two orders Bessel functions are considered for the evaluation of electron energy states. Result reveals that while perpendicular electric field lowers the energy subbands, parallel magnetic field makes the opposite effect; thus creating an interesting trade-off situation. The result is weighted against with that acquired independently in absence of electric field and magnetic field respectively for identical dimensions. The present work reflects this energy optimization by simultaneous tailoring of both the fields in order to obtain absorption and emission spectra.
Theoretical computation of eigenenergy and transmission coefficient for symmetric quantum double ... more Theoretical computation of eigenenergy and transmission coefficient for symmetric quantum double barrier structure considering GaAs/Al xGa 1-xAs material composition has been carried out using transfer matrix method to study the resonant tunneling phenomenon under 1-D confinement which is a quantum-coherent mechanism, and also to study about the existence of quasi-bound states when the device is subjected to electric field. Device is made dimensionally asymmetric to observe the variation of tunneling probability in presence and absence of electric field to compute probability of resonant tunneling at specific energy values less than barrier potential.. Effective mass mismatch at junctions are considered throughout the analysis by varying the mole fraction of Al to estimate near accurate values of eigenenrgies and also of the transmission probabilities. Application of negative bias makes the possibility of quasi- bound states near zero energy.
2018 IEEE Electron Devices Kolkata Conference (EDKCON)
Differential conductance of submicron HEMT is analytically investigated as a function of drain bi... more Differential conductance of submicron HEMT is analytically investigated as a function of drain bias for different structural parameters and parasitic effects. Simulation is carried out for two different substrate based devices, Si and sapphire, and comparative study is carried out for those structural parameters at which VGS provides maximum transconductance. Poisson's equation and carrier density equations are simultaneously solved to get drain current variations and parasitic effects are invoked through boundary conditions for realistic results. Result speaks that effect of threshold voltage is negligible on sapphire based device over a wider range of horizontal bias. Nanometric channel length provides almost constant conductance profile with insignificant magnitude.
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)
Based on the climatic conditions like temperature and humidity of the soil, a novel robot is desi... more Based on the climatic conditions like temperature and humidity of the soil, a novel robot is designed which can assist farmers for judging the requirement of water and fertilizer. An efficient algorithm is made for this purpose, which sets the threshold level for decision making purpose for different requisites; and also plot the real-time data based on the pre-defined optimum level. Owing to its movement capability, it is able to provide the water and fertilizer at the specific places till the reference level is reached, and then moves thereafter. It also uses remote sensing for determining insect stress and applies insecticides as per requirement. In our agricultural-dominated country, the present solution is a much-needed solution for harvesting problems.
Lowest two quantum states of a double-well-triple-barrier structure are numerically analyzed for ... more Lowest two quantum states of a double-well-triple-barrier structure are numerically analyzed for Pöschl-Teller potential profile. Kane-type band nonparabolicity of first order is considered for rational replication purpose, and effective mass mismatch between well and barrier layers are included in the computation following the BenDaniel Duke boundary conditions. Transmission coefficient is plotted as a function of input energy flux, and peaks are identified for eigenstate determination in presence and absence of external electric field. Results are compared with that obtained for ideal rectangular geometry, and better quasi-peak characteristics speaks in favor of the proposed structure for photodetector application, where tailoring of subband energy can be achieved by means of structural parameter variations.
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)
Ripple factor of ternary photonic bandpass filter is analytically computed around 1.55 μm under n... more Ripple factor of ternary photonic bandpass filter is analytically computed around 1.55 μm under normal incidence of electromagnetic wave. Parallel nanorod is considered as the metamaterial for the simulation purpose with air gap, and transfer matrix technique is adopted for the investigation. Improved noise rejection characteristics are obtained compared to the published results for positive index materials. Different structural parameters are varied to observe the bandwidth as well as noise variation for optimized performance. The structure is taken as defected one, where the density of point defect is within the limit of fabrication, so that the simulated findings can be taken as realistic.
A novel package is proposed using JAVA-GUI platform for analyzing filter performance with one-dim... more A novel package is proposed using JAVA-GUI platform for analyzing filter performance with one-dimensional photonic crystal. With this package, user can provide the required structural parameters (within fabrication limit) for maximum 11 layers 1D structure; and bandpass characteristics can be obtained for both the polarized input conditions. Results are provided for SiO2-air composition, and can be obtained for other material systems with positive refractive indices. Package is useful prior to fabrication for optimizing filter performance.
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 2020
Lower return loss and isolation loss of 1-bit RF MEMS switch is analytically investigated for dif... more Lower return loss and isolation loss of 1-bit RF MEMS switch is analytically investigated for different dielectric materials over the L band to K band. Both unactuated as well as actuated conditions are taken care for simulation purpose, where overlap area is kept constant. Simulated findings reveal that both the losses are significantly reduced for lower dielectric constant material (SiO2) compared to higher permittivity (Si3N4) upto 30% which is an indirect estimation for measuring upstate and down-state capacitances. Results are also compared with existing data from published literature which speaks in favor of the present work for phase-shifter design.
In this paper, an efficient synthesis technique for high-speed multivalued ALU for \((2^{p} \pm q... more In this paper, an efficient synthesis technique for high-speed multivalued ALU for \((2^{p} \pm q)\) radix system is proposed with reduced complexity. Addition, subtraction, increment/decrement and basic logical operations are implemented just by rotation of the matrix or shifting of a few elements, and thus minimum number of computational steps is involved; which saves CPU time usage. Matrix representation for all the operations is provided in a tabular manner with pseudocode for the proposed \((2^{p} \pm q)\) radix system in order to understand the detailed procedure of operations. All the pseudocodes have been verified using Xilinx ISE 14.1 simulator using Vertex-7 XC7VX330t device. Lower computation time and complexity make the ALU efficient than those already proposed in the available literature.
Quantum-confined states of electrons inside quantum ring-like structure have been analytically in... more Quantum-confined states of electrons inside quantum ring-like structure have been analytically investigated subjected to crossed electromagnetic field in order to study the effect of field quantization. Schrodinger equation without considering time-dependency factor is solved with boundary conditions based on the cylindrical geometry of the structure, and lowest two orders Bessel functions are considered for the evaluation of electron energy states. Result reveals that while perpendicular electric field lowers the energy subbands, parallel magnetic field makes the opposite effect; thus creating an interesting trade-off situation. The result is weighted against with that acquired independently in absence of electric field and magnetic field respectively for identical dimensions. The present work reflects this energy optimization by simultaneous tailoring of both the fields in order to obtain absorption and emission spectra.
Theoretical computation of eigenenergy and transmission coefficient for symmetric quantum double ... more Theoretical computation of eigenenergy and transmission coefficient for symmetric quantum double barrier structure considering GaAs/Al xGa 1-xAs material composition has been carried out using transfer matrix method to study the resonant tunneling phenomenon under 1-D confinement which is a quantum-coherent mechanism, and also to study about the existence of quasi-bound states when the device is subjected to electric field. Device is made dimensionally asymmetric to observe the variation of tunneling probability in presence and absence of electric field to compute probability of resonant tunneling at specific energy values less than barrier potential.. Effective mass mismatch at junctions are considered throughout the analysis by varying the mole fraction of Al to estimate near accurate values of eigenenrgies and also of the transmission probabilities. Application of negative bias makes the possibility of quasi- bound states near zero energy.
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