Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple gene... more Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple generations of integrated circuits (ICs) due to its wide process latitude and depth of focus (DOF) for 0.2 micrometers to 0.5 micrometers feature sizes. This capability has been attained through improvements in deep-UV wide field lens technology, excimer lasers, steppers and chemically amplified, positive deep-UV resists. Chemically amplified deep-UV resists are required for 248 nm lithography due to the poor absorption and sensitivity of conventional novolac resists. The acid catalyzation processes of the new resists requires control of the thermal history and environmental conditions of the lithographic process. Work is currently underway at several resist vendors to reduce the need for these controls, but practical manufacturing solutions exist today. One of these solutions is the integration of steppers and resist tracks into a `cluster tool' or `Lithocell' to insure a consistent thermal profile for the resist process and reduce the time the resist is exposed to atmospheric contamination. The work here reports processing and system integration results with a Machine Technology, Inc (MTI) post-exposure bake (PEB) track interfaced with an advanced GCA XLS 7800 deep-UV stepper [31 mm diameter, variable NA (0.35 - 0.53) and variable sigma (0.3 - 0.74)].
The authors have developed a Chip-Scale Atomic Clock (CSAC) of sufficiently low power and small s... more The authors have developed a Chip-Scale Atomic Clock (CSAC) of sufficiently low power and small size to enable atomic timing in portable battery-powered devices. The collaboration of diverse research teams in clock technology, micro-electromechanical systems (MEMS), and optoelectronic devices has resulted in size and power reduction of atomic clock technology by more than two orders of magnitude. In 2007, we
Traditionally, the use of organics within a vacuum-sealed hermetic electronics package has been a... more Traditionally, the use of organics within a vacuum-sealed hermetic electronics package has been avoided. Organics, including adhesives, may outgas and degrade over time, resulting in a rapid reduction in vacuum quality within a sealed device package. However, MEMS device fabrication is now blurring the lines between strictly electronic devices, which contain very few organic components, and electro-mechanical devices, whose secondary
Proceedings of the ... IEEE International Frequency Control Symposium, May 1, 2007
... M. Varghese, G. Tepolt, J. Leblanc, and M. Mescher Charles Stark Draper Laboratory Cambridge,... more ... M. Varghese, G. Tepolt, J. Leblanc, and M. Mescher Charles Stark Draper Laboratory Cambridge, MA USA ... Averaging Time, τ SN084 SN084 Drift Removed Specification Figure 7: MAC SN084 Stability Figure 7 shows the Allan deviation of MAC SN084 for a 3-week data period. ...
L’invention concerne des modules electrodes et des interposeurs formes par encapsulation de puces... more L’invention concerne des modules electrodes et des interposeurs formes par encapsulation de puces microelectroniques et/ou de montants au sein de cavites dans un substrat.
Journal of Microelectronics and Electronic Packaging, 2010
The drive toward increased packaging density relies on die stacking. In order to maximize functio... more The drive toward increased packaging density relies on die stacking. In order to maximize functional density, die are generally thinned on the wafer level. However, high-cost low-volume applications may not have full wafers available. Therefore, a method to thin individual die must be developed. In this article, a detailed and reliable process for thinning die to sub35 μm is outlined. The process consists of four steps: pseudo-wafer lamination, mechanical lapping, chemical mechanical planarization (CMP), and die release. A pseudo-wafer is created by adhering die to a glass substrate. Mechanical lapping is used to remove the bulk silicon and reduce die thickness to approximately 50 μm. CMP is used to attain thicknesses of sub35 μm and remove the subsurface damage layer from the die. This process can reliably produce die thinned to sub35 μm with ± 1.5-μm total thickness variation (TTV). The die are then released from the glass substrate and are handled using a customized vacuum carrier.
Advances in Resist Technology and Processing X, 1993
Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple gene... more Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple generations of integrated circuits (ICs) due to its wide process latitude and depth of focus (DOF) for 0.2 micrometers to 0.5 micrometers feature sizes. This capability has been attained through improvements in deep-UV wide field lens technology, excimer lasers, steppers and chemically amplified, positive deep-UV resists. Chemically amplified deep-UV resists are required for 248 nm lithography due to the poor absorption and sensitivity of conventional novolac resists. The acid catalyzation processes of the new resists requires control of the thermal history and environmental conditions of the lithographic process. Work is currently underway at several resist vendors to reduce the need for these controls, but practical manufacturing solutions exist today. One of these solutions is the integration of steppers and resist tracks into a `cluster tool' or `Lithocell' to insure a consistent thermal profile for the resist process and reduce the time the resist is exposed to atmospheric contamination. The work here reports processing and system integration results with a Machine Technology, Inc (MTI) post-exposure bake (PEB) track interfaced with an advanced GCA XLS 7800 deep-UV stepper [31 mm diameter, variable NA (0.35 - 0.53) and variable sigma (0.3 - 0.74)].
Traditionally, the use of organics within a vacuum-sealed hermetic electronics package has been a... more Traditionally, the use of organics within a vacuum-sealed hermetic electronics package has been avoided. Organics, including adhesives, may outgas and degrade over time, resulting in a rapid reduction in vacuum quality within a sealed device package. However, MEMS device fabrication is now blurring the lines between strictly electronic devices, which contain very few organic components, and electro-mechanical devices, whose secondary
A new generation of small low-power atomic sensors, including clocks, magnetometers, and gyroscop... more A new generation of small low-power atomic sensors, including clocks, magnetometers, and gyroscopes, is being developed based on recently available MEMS and VCSEL technologies. These sensors rely on spectroscopic interrogation of alkali atoms, typically rubidium or cesium, contained in small vapor cells. The relevant spectroscopic wavelengths (in vacuum) are 894.6 nm (D1) and 852.3 nm (D2) for cesium, and 795.0
Frequency Standards and Metrology - Proceedings of the 7th Symposium, 2009
The authors have developed a Chip-Scale Atomic Clock (CSAC) of sufficiently low power and small s... more The authors have developed a Chip-Scale Atomic Clock (CSAC) of sufficiently low power and small size to enable atomic timing in portable battery-powered devices. The collaboration of diverse research teams in clock technology, micro-electromechanical systems (MEMS), and optoelectronic devices has resulted in size and power reduction of atomic clock technology by more than two orders of magnitude. In 2007, we
2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, 2007
... M. Varghese, G. Tepolt, J. Leblanc, and M. Mescher Charles Stark Draper Laboratory Cambridge,... more ... M. Varghese, G. Tepolt, J. Leblanc, and M. Mescher Charles Stark Draper Laboratory Cambridge, MA USA ... Averaging Time, τ SN084 SN084 Drift Removed Specification Figure 7: MAC SN084 Stability Figure 7 shows the Allan deviation of MAC SN084 for a 3-week data period. ...
Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple gene... more Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple generations of integrated circuits (ICs) due to its wide process latitude and depth of focus (DOF) for 0.2 micrometers to 0.5 micrometers feature sizes. This capability has been attained through improvements in deep-UV wide field lens technology, excimer lasers, steppers and chemically amplified, positive deep-UV resists. Chemically amplified deep-UV resists are required for 248 nm lithography due to the poor absorption and sensitivity of conventional novolac resists. The acid catalyzation processes of the new resists requires control of the thermal history and environmental conditions of the lithographic process. Work is currently underway at several resist vendors to reduce the need for these controls, but practical manufacturing solutions exist today. One of these solutions is the integration of steppers and resist tracks into a `cluster tool' or `Lithocell' to insure a consistent thermal profile for the resist process and reduce the time the resist is exposed to atmospheric contamination. The work here reports processing and system integration results with a Machine Technology, Inc (MTI) post-exposure bake (PEB) track interfaced with an advanced GCA XLS 7800 deep-UV stepper [31 mm diameter, variable NA (0.35 - 0.53) and variable sigma (0.3 - 0.74)].
The authors have developed a Chip-Scale Atomic Clock (CSAC) of sufficiently low power and small s... more The authors have developed a Chip-Scale Atomic Clock (CSAC) of sufficiently low power and small size to enable atomic timing in portable battery-powered devices. The collaboration of diverse research teams in clock technology, micro-electromechanical systems (MEMS), and optoelectronic devices has resulted in size and power reduction of atomic clock technology by more than two orders of magnitude. In 2007, we
Traditionally, the use of organics within a vacuum-sealed hermetic electronics package has been a... more Traditionally, the use of organics within a vacuum-sealed hermetic electronics package has been avoided. Organics, including adhesives, may outgas and degrade over time, resulting in a rapid reduction in vacuum quality within a sealed device package. However, MEMS device fabrication is now blurring the lines between strictly electronic devices, which contain very few organic components, and electro-mechanical devices, whose secondary
Proceedings of the ... IEEE International Frequency Control Symposium, May 1, 2007
... M. Varghese, G. Tepolt, J. Leblanc, and M. Mescher Charles Stark Draper Laboratory Cambridge,... more ... M. Varghese, G. Tepolt, J. Leblanc, and M. Mescher Charles Stark Draper Laboratory Cambridge, MA USA ... Averaging Time, τ SN084 SN084 Drift Removed Specification Figure 7: MAC SN084 Stability Figure 7 shows the Allan deviation of MAC SN084 for a 3-week data period. ...
L’invention concerne des modules electrodes et des interposeurs formes par encapsulation de puces... more L’invention concerne des modules electrodes et des interposeurs formes par encapsulation de puces microelectroniques et/ou de montants au sein de cavites dans un substrat.
Journal of Microelectronics and Electronic Packaging, 2010
The drive toward increased packaging density relies on die stacking. In order to maximize functio... more The drive toward increased packaging density relies on die stacking. In order to maximize functional density, die are generally thinned on the wafer level. However, high-cost low-volume applications may not have full wafers available. Therefore, a method to thin individual die must be developed. In this article, a detailed and reliable process for thinning die to sub35 μm is outlined. The process consists of four steps: pseudo-wafer lamination, mechanical lapping, chemical mechanical planarization (CMP), and die release. A pseudo-wafer is created by adhering die to a glass substrate. Mechanical lapping is used to remove the bulk silicon and reduce die thickness to approximately 50 μm. CMP is used to attain thicknesses of sub35 μm and remove the subsurface damage layer from the die. This process can reliably produce die thinned to sub35 μm with ± 1.5-μm total thickness variation (TTV). The die are then released from the glass substrate and are handled using a customized vacuum carrier.
Advances in Resist Technology and Processing X, 1993
Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple gene... more Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple generations of integrated circuits (ICs) due to its wide process latitude and depth of focus (DOF) for 0.2 micrometers to 0.5 micrometers feature sizes. This capability has been attained through improvements in deep-UV wide field lens technology, excimer lasers, steppers and chemically amplified, positive deep-UV resists. Chemically amplified deep-UV resists are required for 248 nm lithography due to the poor absorption and sensitivity of conventional novolac resists. The acid catalyzation processes of the new resists requires control of the thermal history and environmental conditions of the lithographic process. Work is currently underway at several resist vendors to reduce the need for these controls, but practical manufacturing solutions exist today. One of these solutions is the integration of steppers and resist tracks into a `cluster tool' or `Lithocell' to insure a consistent thermal profile for the resist process and reduce the time the resist is exposed to atmospheric contamination. The work here reports processing and system integration results with a Machine Technology, Inc (MTI) post-exposure bake (PEB) track interfaced with an advanced GCA XLS 7800 deep-UV stepper [31 mm diameter, variable NA (0.35 - 0.53) and variable sigma (0.3 - 0.74)].
Traditionally, the use of organics within a vacuum-sealed hermetic electronics package has been a... more Traditionally, the use of organics within a vacuum-sealed hermetic electronics package has been avoided. Organics, including adhesives, may outgas and degrade over time, resulting in a rapid reduction in vacuum quality within a sealed device package. However, MEMS device fabrication is now blurring the lines between strictly electronic devices, which contain very few organic components, and electro-mechanical devices, whose secondary
A new generation of small low-power atomic sensors, including clocks, magnetometers, and gyroscop... more A new generation of small low-power atomic sensors, including clocks, magnetometers, and gyroscopes, is being developed based on recently available MEMS and VCSEL technologies. These sensors rely on spectroscopic interrogation of alkali atoms, typically rubidium or cesium, contained in small vapor cells. The relevant spectroscopic wavelengths (in vacuum) are 894.6 nm (D1) and 852.3 nm (D2) for cesium, and 795.0
Frequency Standards and Metrology - Proceedings of the 7th Symposium, 2009
The authors have developed a Chip-Scale Atomic Clock (CSAC) of sufficiently low power and small s... more The authors have developed a Chip-Scale Atomic Clock (CSAC) of sufficiently low power and small size to enable atomic timing in portable battery-powered devices. The collaboration of diverse research teams in clock technology, micro-electromechanical systems (MEMS), and optoelectronic devices has resulted in size and power reduction of atomic clock technology by more than two orders of magnitude. In 2007, we
2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, 2007
... M. Varghese, G. Tepolt, J. Leblanc, and M. Mescher Charles Stark Draper Laboratory Cambridge,... more ... M. Varghese, G. Tepolt, J. Leblanc, and M. Mescher Charles Stark Draper Laboratory Cambridge, MA USA ... Averaging Time, τ SN084 SN084 Drift Removed Specification Figure 7: MAC SN084 Stability Figure 7 shows the Allan deviation of MAC SN084 for a 3-week data period. ...
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Papers by Gary Tepolt