Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)
Ultra-high speed and low crosstalk four-channel receiver optoelectronic integrated circuit (OEIC)... more Ultra-high speed and low crosstalk four-channel receiver optoelectronic integrated circuit (OEIC) arrays have been successfully fabricated. GaInAs pin PDs and AlInAs/GaInAs high electron mobility transistors were monolithically integrated on an InP substrate. The high frequency characteristics of the receiver OEIC arrays were evaluated with on-wafer microwave probing. Two types of receiver OEIC arrays were demonstrated. One type of array exhibited high speed operation up to 5.0 Gb/s and low crosstalk characteristics less than -38 dB, while the other exhibited a high sensitivity of -21.5 dBm at 3.0 Gb/s and low crosstalk characteristics less than -40 dB
A combination of parallelism and high speed would be an optimal approach to high performance opti... more A combination of parallelism and high speed would be an optimal approach to high performance optical computer architecture. In view of the recent development of a potentially very fast 2-D array of surface emitting lasers, there is a latent demand for a parallelly addressable optoelectronic logic circuit with a high repetition rate. We discuss the trial design of a novel configuration of integrated optoelectronic logic composed of MSM photodiodes (PDs) based on GaAs IC technology.
31st European Conference on Optical Communications (ECOC 2005), 2005
ABSTRACT A novel method to determine the unity gain responsivity of high-speed avalanche photodio... more ABSTRACT A novel method to determine the unity gain responsivity of high-speed avalanche photodiode was proposed. It helps clarifying our APDs with thin InAlAs multiplication layer has achieved GB product over 172 GHz.
A new configuration of an integrated optoelectronic logic unit using GaAs photodiode gates is pro... more A new configuration of an integrated optoelectronic logic unit using GaAs photodiode gates is proposed. Implementation of AND and EOR logic units are performed monolithically using GaAs/AlGaAs multilayer structures. Discussions are made on the realization of the full adder by means of optical feedback between the photodiode logic array and the surface emitting diode laser array.
Combining two metal-semiconductor-metal Schottky barrier photodiodes (MSM-PDs) monolithically, a ... more Combining two metal-semiconductor-metal Schottky barrier photodiodes (MSM-PDs) monolithically, a composite photodetector is fabricated on a semi-insulating GaAs substrate. Upon illuminating each of them with subpicosecond optical pulses, electrical pulses with full width at half maximum (FWHM) less than 30 ps are generated. Delay time dependence of the waveform is investigated both experimentally and theoretically based on a dynamic equivalent circuit model.
Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)
Ultra-high speed and low crosstalk four-channel receiver optoelectronic integrated circuit (OEIC)... more Ultra-high speed and low crosstalk four-channel receiver optoelectronic integrated circuit (OEIC) arrays have been successfully fabricated. GaInAs pin PDs and AlInAs/GaInAs high electron mobility transistors were monolithically integrated on an InP substrate. The high frequency characteristics of the receiver OEIC arrays were evaluated with on-wafer microwave probing. Two types of receiver OEIC arrays were demonstrated. One type of array exhibited high speed operation up to 5.0 Gb/s and low crosstalk characteristics less than -38 dB, while the other exhibited a high sensitivity of -21.5 dBm at 3.0 Gb/s and low crosstalk characteristics less than -40 dB
A combination of parallelism and high speed would be an optimal approach to high performance opti... more A combination of parallelism and high speed would be an optimal approach to high performance optical computer architecture. In view of the recent development of a potentially very fast 2-D array of surface emitting lasers, there is a latent demand for a parallelly addressable optoelectronic logic circuit with a high repetition rate. We discuss the trial design of a novel configuration of integrated optoelectronic logic composed of MSM photodiodes (PDs) based on GaAs IC technology.
31st European Conference on Optical Communications (ECOC 2005), 2005
ABSTRACT A novel method to determine the unity gain responsivity of high-speed avalanche photodio... more ABSTRACT A novel method to determine the unity gain responsivity of high-speed avalanche photodiode was proposed. It helps clarifying our APDs with thin InAlAs multiplication layer has achieved GB product over 172 GHz.
A new configuration of an integrated optoelectronic logic unit using GaAs photodiode gates is pro... more A new configuration of an integrated optoelectronic logic unit using GaAs photodiode gates is proposed. Implementation of AND and EOR logic units are performed monolithically using GaAs/AlGaAs multilayer structures. Discussions are made on the realization of the full adder by means of optical feedback between the photodiode logic array and the surface emitting diode laser array.
Combining two metal-semiconductor-metal Schottky barrier photodiodes (MSM-PDs) monolithically, a ... more Combining two metal-semiconductor-metal Schottky barrier photodiodes (MSM-PDs) monolithically, a composite photodetector is fabricated on a semi-insulating GaAs substrate. Upon illuminating each of them with subpicosecond optical pulses, electrical pulses with full width at half maximum (FWHM) less than 30 ps are generated. Delay time dependence of the waveform is investigated both experimentally and theoretically based on a dynamic equivalent circuit model.
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Papers by Hiroyuki Kamiyama