A complete on-wafer heterojunction bipolar transistors (HBTs) equivalent circuit parameters extra... more A complete on-wafer heterojunction bipolar transistors (HBTs) equivalent circuit parameters extraction technique is presented. It is based on the successive extraction of extrinsic and intrinsic elements. An improved method for parasitic inductance values determination is proposed. It results in a more accurate modelling of HBTs which is shown to be very useful especially for high frequency noise parameter modelling.
The 5th European Microwave Integrated Circuits Conference, 2010
Reliability in GaN based devices still motivates numerous studies because the involved degradatio... more Reliability in GaN based devices still motivates numerous studies because the involved degradation mechanisms are different from that in III-V narrow bandgap devices. Direct investigations on high electron mobility transistors (HEMT) are performed with low frequency noise (LFN) measurements and pulsed electrical characterization. Undoped AlGaN/GaN devices grown on silicon substrate are stressed at a junction temperature of 175°C. Gate-lag and drain-lag measurements method have been performed versus different quiescent bias points and under different pulse conditions. This method allows the discrimination of each lag phenomenon as well as the thermal contribution. Thus it is possible to track and model the trapping mechanisms versus bias conditions. This electrical modelling is completed with LFN measurements, which is largely used for reliability investigations.
ABSTRACTThe rapid expansion of SiGe technologies during the last decade essentially due to civil ... more ABSTRACTThe rapid expansion of SiGe technologies during the last decade essentially due to civil telecommunication's applications have led Si/SiGe based heterojunction bipolar transistors (HBTs) to excellent performance levels, allowing high frequency low noise circuit designs such as linear low noise amplifiers( RF noise) or also low-phase noise oscillators (LF noise). Among these technologies, the SiGe BiCMOS one integrates digital and RF functions on the same chip. Fast improvements of the technological process have been performed thanks to large efforts allowed to characterization and modeling of the devices. We have investigated on the influence of technological parameters such as Germanium profile, doping level and thickness of the base layer (5 different wafers) on the dynamic and high frequency noise performances to converge towards the optimum technological process (now available with the BiCMOS6G processed by ST microelectronics). We made use of scattering parameters [...
ABSTRACTOne of today's challenges to enable the improved electrical performances and reliabil... more ABSTRACTOne of today's challenges to enable the improved electrical performances and reliability of microelectronic devices consists in controlling impurities contamination: hydrogen appears to be present in most (if not all) the processes steps of the devices making (ambient atmosphere, or associated with AsH3 -VPE or AsCl3 -VPE for example in GaAs based devices,…). Hydrogen induced reliability has already been investigated for many Si or GaAs based technologies ((C)MOS, FET, HEMT, PHEMT as well as HBT devices). These effects of hydrogen on electrical behavior and on long term reliability are very difficult to understand because of the different nature and ionic association of hydrogen (H, H+, H-, H2, or associated with impurities (Ge-H, Be-H, C-H,…). Most of these studies make use of IR, SIMS, Hall measurements: in this paper, we use low frequency noise measurements, associated with static as well as dynamic characterization to identify the degradation process in GaInP/GaAs He...
GaN technologies have penetrated the microelectronic markets, proving the high potential of this ... more GaN technologies have penetrated the microelectronic markets, proving the high potential of this technology for a wide variety of applications (optoLEDs and Laser, power and RF electronics). However, robustness of these widebandgap technologies still needs to be improved: a large number of studies have addressed the main different roots provoking degradation of RF, DC or thermal performances of transistors dedicated
Reliability in GaN based devices still motivates numerous studies because the involved degradatio... more Reliability in GaN based devices still motivates numerous studies because the involved degradation mechanisms are different from that in III-V narrow bandgap devices. Direct investigations on high electron mobility transistors (HEMT) are performed with low frequency noise (LFN) measurements and pulsed electrical characterization. Undoped AlGaN/GaN devices grown on silicon substrate are stressed at a junction temperature of 175°C. Gate-lag and
The burn-in f!ffict has been studied in C and IniC doped GaInPIGaAs HETs jeaturing [OllJ and [011... more The burn-in f!ffict has been studied in C and IniC doped GaInPIGaAs HETs jeaturing [OllJ and [011] emitter orientations. The investigation has been carried out by means of DC, and Low Frequency Noise (LFN) (250Hz-100kHz) characterization s. We found that the [011] emitter orientation minimizes the burn-in effect.
IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305), 1997
The present work compares two sets of carbon doped GaInP/GaAs HBTs. The only difference between t... more The present work compares two sets of carbon doped GaInP/GaAs HBTs. The only difference between the device sets resides in the technology employed to passivate the extrinsic base surface region. The results demonstrate that the burn-in effect is a surface related phenomenon and that the ledge passivation technology is a very promising method to improve device reliability
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534), 2000
ABSTRACT In this paper the effects of hot carrier on the correlation resistance in SiGe HBT&#... more ABSTRACT In this paper the effects of hot carrier on the correlation resistance in SiGe HBT's are investigated. Before the stress the correlation resistance was found to be comparable with the access series resistance while, after the stress, the correlation resistance decreases and the access series resistance increases. This increase suggests that the stress degrades the access regions of the transistor. On the other hand, the observed behaviour of the correlation resistance is explained in terms of an intrinsic noise source, Π-topology based low frequency noise model. It is shown that the correlation resistance is a useful indicator of surface recombination mechanisms. In particular, one intrinsic noise source in the model is associated with the degradation of the extrinsic base surface around the emitter perimeter
A complete on-wafer heterojunction bipolar transistors (HBTs) equivalent circuit parameters extra... more A complete on-wafer heterojunction bipolar transistors (HBTs) equivalent circuit parameters extraction technique is presented. It is based on the successive extraction of extrinsic and intrinsic elements. An improved method for parasitic inductance values determination is proposed. It results in a more accurate modelling of HBTs which is shown to be very useful especially for high frequency noise parameter modelling.
The 5th European Microwave Integrated Circuits Conference, 2010
Reliability in GaN based devices still motivates numerous studies because the involved degradatio... more Reliability in GaN based devices still motivates numerous studies because the involved degradation mechanisms are different from that in III-V narrow bandgap devices. Direct investigations on high electron mobility transistors (HEMT) are performed with low frequency noise (LFN) measurements and pulsed electrical characterization. Undoped AlGaN/GaN devices grown on silicon substrate are stressed at a junction temperature of 175°C. Gate-lag and drain-lag measurements method have been performed versus different quiescent bias points and under different pulse conditions. This method allows the discrimination of each lag phenomenon as well as the thermal contribution. Thus it is possible to track and model the trapping mechanisms versus bias conditions. This electrical modelling is completed with LFN measurements, which is largely used for reliability investigations.
ABSTRACTThe rapid expansion of SiGe technologies during the last decade essentially due to civil ... more ABSTRACTThe rapid expansion of SiGe technologies during the last decade essentially due to civil telecommunication's applications have led Si/SiGe based heterojunction bipolar transistors (HBTs) to excellent performance levels, allowing high frequency low noise circuit designs such as linear low noise amplifiers( RF noise) or also low-phase noise oscillators (LF noise). Among these technologies, the SiGe BiCMOS one integrates digital and RF functions on the same chip. Fast improvements of the technological process have been performed thanks to large efforts allowed to characterization and modeling of the devices. We have investigated on the influence of technological parameters such as Germanium profile, doping level and thickness of the base layer (5 different wafers) on the dynamic and high frequency noise performances to converge towards the optimum technological process (now available with the BiCMOS6G processed by ST microelectronics). We made use of scattering parameters [...
ABSTRACTOne of today's challenges to enable the improved electrical performances and reliabil... more ABSTRACTOne of today's challenges to enable the improved electrical performances and reliability of microelectronic devices consists in controlling impurities contamination: hydrogen appears to be present in most (if not all) the processes steps of the devices making (ambient atmosphere, or associated with AsH3 -VPE or AsCl3 -VPE for example in GaAs based devices,…). Hydrogen induced reliability has already been investigated for many Si or GaAs based technologies ((C)MOS, FET, HEMT, PHEMT as well as HBT devices). These effects of hydrogen on electrical behavior and on long term reliability are very difficult to understand because of the different nature and ionic association of hydrogen (H, H+, H-, H2, or associated with impurities (Ge-H, Be-H, C-H,…). Most of these studies make use of IR, SIMS, Hall measurements: in this paper, we use low frequency noise measurements, associated with static as well as dynamic characterization to identify the degradation process in GaInP/GaAs He...
GaN technologies have penetrated the microelectronic markets, proving the high potential of this ... more GaN technologies have penetrated the microelectronic markets, proving the high potential of this technology for a wide variety of applications (optoLEDs and Laser, power and RF electronics). However, robustness of these widebandgap technologies still needs to be improved: a large number of studies have addressed the main different roots provoking degradation of RF, DC or thermal performances of transistors dedicated
Reliability in GaN based devices still motivates numerous studies because the involved degradatio... more Reliability in GaN based devices still motivates numerous studies because the involved degradation mechanisms are different from that in III-V narrow bandgap devices. Direct investigations on high electron mobility transistors (HEMT) are performed with low frequency noise (LFN) measurements and pulsed electrical characterization. Undoped AlGaN/GaN devices grown on silicon substrate are stressed at a junction temperature of 175°C. Gate-lag and
The burn-in f!ffict has been studied in C and IniC doped GaInPIGaAs HETs jeaturing [OllJ and [011... more The burn-in f!ffict has been studied in C and IniC doped GaInPIGaAs HETs jeaturing [OllJ and [011] emitter orientations. The investigation has been carried out by means of DC, and Low Frequency Noise (LFN) (250Hz-100kHz) characterization s. We found that the [011] emitter orientation minimizes the burn-in effect.
IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305), 1997
The present work compares two sets of carbon doped GaInP/GaAs HBTs. The only difference between t... more The present work compares two sets of carbon doped GaInP/GaAs HBTs. The only difference between the device sets resides in the technology employed to passivate the extrinsic base surface region. The results demonstrate that the burn-in effect is a surface related phenomenon and that the ledge passivation technology is a very promising method to improve device reliability
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534), 2000
ABSTRACT In this paper the effects of hot carrier on the correlation resistance in SiGe HBT&#... more ABSTRACT In this paper the effects of hot carrier on the correlation resistance in SiGe HBT's are investigated. Before the stress the correlation resistance was found to be comparable with the access series resistance while, after the stress, the correlation resistance decreases and the access series resistance increases. This increase suggests that the stress degrades the access regions of the transistor. On the other hand, the observed behaviour of the correlation resistance is explained in terms of an intrinsic noise source, Π-topology based low frequency noise model. It is shown that the correlation resistance is a useful indicator of surface recombination mechanisms. In particular, one intrinsic noise source in the model is associated with the degradation of the extrinsic base surface around the emitter perimeter
Uploads