In this paper we present for the first time mid-gap CoSi/sub 2/ metal gates obtained by total gat... more In this paper we present for the first time mid-gap CoSi/sub 2/ metal gates obtained by total gate silicidation meaning that the silicidation process decay itself once the reaction front arrives down to the gate oxide and no more polysilicon is left. Metal gate are required for FDSOI but they may also be useful for low gate-resistance bulk RF devices. For simplicity, we have investigated totally silicided gates within a 0.1 /spl mu/m CMOS bulk technology. In the next step, CoSi/sub 2/ metal gates were processed after the poly CMP step (first CMP in damascene process) in order to protect source and drain from deep silicidation. Low gate resistivity transistors were obtained, exhibiting good performances without degradation in gate leakage, subthreshold slope nor in drive and off currents compared with reference poly-silicon gate transistors.
... Author Contact Information , E-mail The Corresponding Author , a , Yveline Gobil b , Joaquin ... more ... Author Contact Information , E-mail The Corresponding Author , a , Yveline Gobil b , Joaquin Torres b , Patrick V. Kelly a and Gabriel M. Crean a. ... have recently demonstrated a suitable pre-treatment that involved both removal of the TiO 2 , using HF, and activation of the TiN ...
Time-Dependent-Dielectric-Breakdown (TDDB) tests have been conducted on differently copper-contam... more Time-Dependent-Dielectric-Breakdown (TDDB) tests have been conducted on differently copper-contaminated Metal-Oxide-Silicon (MOS) capacitors in which the insulator was the same as the interconnects Inter-Level Dielectric (ILD). TDDB tests are particularly sensitive in addressing the properties of Cu-contaminated dielectric and they are suitable for the characterization of diffusion barrier layers for Cu based intconnects. The lifetime dependence of ILD on Cu contamination
In this paper we present for the first time mid-gap CoSi/sub 2/ metal gates obtained by total gat... more In this paper we present for the first time mid-gap CoSi/sub 2/ metal gates obtained by total gate silicidation meaning that the silicidation process decay itself once the reaction front arrives down to the gate oxide and no more polysilicon is left. Metal gate are required for FDSOI but they may also be useful for low gate-resistance bulk RF devices. For simplicity, we have investigated totally silicided gates within a 0.1 /spl mu/m CMOS bulk technology. In the next step, CoSi/sub 2/ metal gates were processed after the poly CMP step (first CMP in damascene process) in order to protect source and drain from deep silicidation. Low gate resistivity transistors were obtained, exhibiting good performances without degradation in gate leakage, subthreshold slope nor in drive and off currents compared with reference poly-silicon gate transistors.
... Author Contact Information , E-mail The Corresponding Author , a , Yveline Gobil b , Joaquin ... more ... Author Contact Information , E-mail The Corresponding Author , a , Yveline Gobil b , Joaquin Torres b , Patrick V. Kelly a and Gabriel M. Crean a. ... have recently demonstrated a suitable pre-treatment that involved both removal of the TiO 2 , using HF, and activation of the TiN ...
Time-Dependent-Dielectric-Breakdown (TDDB) tests have been conducted on differently copper-contam... more Time-Dependent-Dielectric-Breakdown (TDDB) tests have been conducted on differently copper-contaminated Metal-Oxide-Silicon (MOS) capacitors in which the insulator was the same as the interconnects Inter-Level Dielectric (ILD). TDDB tests are particularly sensitive in addressing the properties of Cu-contaminated dielectric and they are suitable for the characterization of diffusion barrier layers for Cu based intconnects. The lifetime dependence of ILD on Cu contamination
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