GalR1 and GalR2 represent unique pharmacological targets for treatment of seizures and epilepsy. ... more GalR1 and GalR2 represent unique pharmacological targets for treatment of seizures and epilepsy. A novel series of 2,4,6-triaminopyrimidine derivatives were synthesized and found to have sub-micromolar affinity for GalR2. Optimization of a series of 2,4,6-triaminopyrimidines led to the discovery of several analogs with IC50 values ranging from 0.3 to 1 μM.
A thorough understanding of bacteria transport in soil and groundwater is vital to the successful... more A thorough understanding of bacteria transport in soil and groundwater is vital to the successful practice of environmental bioremediation. In this work, a dual-process adsorption with growth and decay model of bacterial transport was proposed. The on-site soil and the high efficiency methyl tert-butyl ether (MTBE) degrading bacterium Chryseobacterium sp.A-3, was used in the experiments. The model was validated using
Samples of n-type Cz Si (1 0 0) and the same Si with a 220 nm oxide layer were implanted at room ... more Samples of n-type Cz Si (1 0 0) and the same Si with a 220 nm oxide layer were implanted at room temperature with 40 or 160 keV He ions at the same dose of 5 × 1016 cm2. Cross-sectional transmission electron microscopy (XTEM) and thermal desorption spectroscopy (TDS) have been performed to study the effects of the oxide layer on cavity evolution and He desorption upon annealing. XTEM observations show that the presence of the oxide layer can inhibit the thermal growth of cavities, which show strong dependence on the energy of He ions. For 40 keV He implantation, shrinkage of the cavities was observed mainly in the Si region close to the original SiO2/Si interface. However, under 160 keV He implantation the presence of the oxide layer leads to a slight broadening of the cavity band, while the mean size of cavities in the band decreases. TDS measurements reveal that the top oxide layer on Si surface could induce the disappearance of the desorption peak at low annealing temperature and occurrence of a new peak at the intermediate annealing temperature. The results were tentatively discussed in combination with the role of the oxide layer in thermal evolution of both defects and He atoms.
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2008
Cz n-type Si(100) wafers were implanted at room temperature with 160keV He ions at a fluence of 5... more Cz n-type Si(100) wafers were implanted at room temperature with 160keV He ions at a fluence of 5×1016/cm2 and 110keV H ions at a fluence of 1×1016/cm2, singly or in combination. Surface phenomena and defect microstructures have been studied by various techniques, including scanning electron microscopy (SEM), atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). Surface exfoliation and
GalR1 and GalR2 represent unique pharmacological targets for treatment of seizures and epilepsy. ... more GalR1 and GalR2 represent unique pharmacological targets for treatment of seizures and epilepsy. A novel series of 2,4,6-triaminopyrimidine derivatives were synthesized and found to have sub-micromolar affinity for GalR2. Optimization of a series of 2,4,6-triaminopyrimidines led to the discovery of several analogs with IC50 values ranging from 0.3 to 1 μM.
A thorough understanding of bacteria transport in soil and groundwater is vital to the successful... more A thorough understanding of bacteria transport in soil and groundwater is vital to the successful practice of environmental bioremediation. In this work, a dual-process adsorption with growth and decay model of bacterial transport was proposed. The on-site soil and the high efficiency methyl tert-butyl ether (MTBE) degrading bacterium Chryseobacterium sp.A-3, was used in the experiments. The model was validated using
Samples of n-type Cz Si (1 0 0) and the same Si with a 220 nm oxide layer were implanted at room ... more Samples of n-type Cz Si (1 0 0) and the same Si with a 220 nm oxide layer were implanted at room temperature with 40 or 160 keV He ions at the same dose of 5 × 1016 cm2. Cross-sectional transmission electron microscopy (XTEM) and thermal desorption spectroscopy (TDS) have been performed to study the effects of the oxide layer on cavity evolution and He desorption upon annealing. XTEM observations show that the presence of the oxide layer can inhibit the thermal growth of cavities, which show strong dependence on the energy of He ions. For 40 keV He implantation, shrinkage of the cavities was observed mainly in the Si region close to the original SiO2/Si interface. However, under 160 keV He implantation the presence of the oxide layer leads to a slight broadening of the cavity band, while the mean size of cavities in the band decreases. TDS measurements reveal that the top oxide layer on Si surface could induce the disappearance of the desorption peak at low annealing temperature and occurrence of a new peak at the intermediate annealing temperature. The results were tentatively discussed in combination with the role of the oxide layer in thermal evolution of both defects and He atoms.
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2008
Cz n-type Si(100) wafers were implanted at room temperature with 160keV He ions at a fluence of 5... more Cz n-type Si(100) wafers were implanted at room temperature with 160keV He ions at a fluence of 5×1016/cm2 and 110keV H ions at a fluence of 1×1016/cm2, singly or in combination. Surface phenomena and defect microstructures have been studied by various techniques, including scanning electron microscopy (SEM), atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). Surface exfoliation and
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