International Conference Micro- and Nano-Electronics 2012, 2013
Furnace annealing, cw- and pulse laser treatments were applied for crystallization of amorphous S... more Furnace annealing, cw- and pulse laser treatments were applied for crystallization of amorphous Si nano-layers and Si nanoclusters in SiNx-Si3N4 and Si-SiO2 multilayer nanostructures. The as-deposited and annealed structures were studied using optical methods and electron microscopy techniques. The influence of hydrogen on crystallization and formation of Si nanoclusters was studied. Regimes for pulse laser crystallization of amorphous Si nanoclusters and nanolayers were found. This approach is applicable for the creation of dielectric films with semiconductor nanoclusters and silicon nanostructured films on non-refractory substrates for all-silicon tandem solar cells.
Thermal annealing of porous silicon at 400 and 450 °C leads to the desorption of hydrogen from th... more Thermal annealing of porous silicon at 400 and 450 °C leads to the desorption of hydrogen from the SiH2 sites and to the quenching of the photoluminescence. After exposure for 2 months to ambient air at 300 K, the photoluminescence is restored and becomes more intense than that of the as-etched sample. IR spectrometry and thermal desorption spectrometry show that
Hydrogenated amorphous silicon can be obtained by reactive evaporation of silicon under a flow of... more Hydrogenated amorphous silicon can be obtained by reactive evaporation of silicon under a flow of hydrogen atoms. By modulating the pressure of hydrogen, it is possible to prepare multilayers of type Si/Si:H/Si/Si:H/ ... with thicknesses of bilayers less than 90 Å. Low-angle X-ray scattering shows diffraction peaks corresponding only to the modulation of atomic density, but low-angle neutron scattering permits to see the modulation of the isotopes hydrogen and deuterium. The thermal stability of the silicon atomic density modulation and of the hydrogen modulation is discussed.
Amorphous SiOx and SiOx:H films were prepared by thermal evaporation of SiO powder in ultrahigh v... more Amorphous SiOx and SiOx:H films were prepared by thermal evaporation of SiO powder in ultrahigh vacuum or under a flow of hydrogen ions onto silicon substrates maintained at 100°C. Photoluminescence (PL) can be seen in the visible range with the naked eye on the as-deposited samples without post-treatments. Composition and structure investigations were performed by infrared and Raman spectrometry experiments
Amorphous Si/SiO multilayers have been prepared at 100°C by successive evaporations of pure silic... more Amorphous Si/SiO multilayers have been prepared at 100°C by successive evaporations of pure silicon and a silicon oxide powder. The silicon thickness is equal to 6Å and the influence of the barrier thickness is investigated. Photoluminescence in the visible range was observed at room temperature for a barrier thickness greater or equal to 16Å. Two contributions at 550 and 750nm
ABSTRACT Single phase (Fe1−xNix)4N compounds (0.2≤x≤0.6) have been synthesized by reactive evapor... more ABSTRACT Single phase (Fe1−xNix)4N compounds (0.2≤x≤0.6) have been synthesized by reactive evaporation and investigated by X-ray diffraction and Mössbauer spectrometry. The lattice parameters of the nitrides decrease from 3.796 to 3.774Å with increasing Ni concentration. The fitting results of Mössbauer spectra indicate that the average hyperfine field have the same changing tendency with lattice parameter and the nickel atoms have a tendency to be located at the corner site.
International Conference Micro- and Nano-Electronics 2012, 2013
Furnace annealing, cw- and pulse laser treatments were applied for crystallization of amorphous S... more Furnace annealing, cw- and pulse laser treatments were applied for crystallization of amorphous Si nano-layers and Si nanoclusters in SiNx-Si3N4 and Si-SiO2 multilayer nanostructures. The as-deposited and annealed structures were studied using optical methods and electron microscopy techniques. The influence of hydrogen on crystallization and formation of Si nanoclusters was studied. Regimes for pulse laser crystallization of amorphous Si nanoclusters and nanolayers were found. This approach is applicable for the creation of dielectric films with semiconductor nanoclusters and silicon nanostructured films on non-refractory substrates for all-silicon tandem solar cells.
Thermal annealing of porous silicon at 400 and 450 °C leads to the desorption of hydrogen from th... more Thermal annealing of porous silicon at 400 and 450 °C leads to the desorption of hydrogen from the SiH2 sites and to the quenching of the photoluminescence. After exposure for 2 months to ambient air at 300 K, the photoluminescence is restored and becomes more intense than that of the as-etched sample. IR spectrometry and thermal desorption spectrometry show that
Hydrogenated amorphous silicon can be obtained by reactive evaporation of silicon under a flow of... more Hydrogenated amorphous silicon can be obtained by reactive evaporation of silicon under a flow of hydrogen atoms. By modulating the pressure of hydrogen, it is possible to prepare multilayers of type Si/Si:H/Si/Si:H/ ... with thicknesses of bilayers less than 90 Å. Low-angle X-ray scattering shows diffraction peaks corresponding only to the modulation of atomic density, but low-angle neutron scattering permits to see the modulation of the isotopes hydrogen and deuterium. The thermal stability of the silicon atomic density modulation and of the hydrogen modulation is discussed.
Amorphous SiOx and SiOx:H films were prepared by thermal evaporation of SiO powder in ultrahigh v... more Amorphous SiOx and SiOx:H films were prepared by thermal evaporation of SiO powder in ultrahigh vacuum or under a flow of hydrogen ions onto silicon substrates maintained at 100°C. Photoluminescence (PL) can be seen in the visible range with the naked eye on the as-deposited samples without post-treatments. Composition and structure investigations were performed by infrared and Raman spectrometry experiments
Amorphous Si/SiO multilayers have been prepared at 100°C by successive evaporations of pure silic... more Amorphous Si/SiO multilayers have been prepared at 100°C by successive evaporations of pure silicon and a silicon oxide powder. The silicon thickness is equal to 6Å and the influence of the barrier thickness is investigated. Photoluminescence in the visible range was observed at room temperature for a barrier thickness greater or equal to 16Å. Two contributions at 550 and 750nm
ABSTRACT Single phase (Fe1−xNix)4N compounds (0.2≤x≤0.6) have been synthesized by reactive evapor... more ABSTRACT Single phase (Fe1−xNix)4N compounds (0.2≤x≤0.6) have been synthesized by reactive evaporation and investigated by X-ray diffraction and Mössbauer spectrometry. The lattice parameters of the nitrides decrease from 3.796 to 3.774Å with increasing Ni concentration. The fitting results of Mössbauer spectra indicate that the average hyperfine field have the same changing tendency with lattice parameter and the nickel atoms have a tendency to be located at the corner site.
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Papers by M. Vergnat