Page 1. Electron Beam Pumped VCSEL Light Source ... The divergence angle of an eVCSEL as well as ... more Page 1. Electron Beam Pumped VCSEL Light Source ... The divergence angle of an eVCSEL as well as the coherence length is a function of cavity length. The light cone is confined to a 15° angle and the relatively low coherence of the laser eliminates speckle. ...
The notion ofusing a laser CRT as monochromatic light source for passive display technologies is ... more The notion ofusing a laser CRT as monochromatic light source for passive display technologies is discussed. Optimism for such an application is based on the high efficiency (more than O %) of "red" lasers obtained in GaInP/AlGaInP multi-quantum well (MQW) structures. A miniature vacuum tube designed as a light source is presented. Technological issues of achieving high efficiency in green
ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band ... more ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure characterization. Decay of the ZnMgSSe solid solution in at least two phases was observed. Improvement in the quality of the crystal lattice and surface morphology was achieved by mismatching the ZnMgSSe from the GaAs substrate by increasing the lattice period by 0.24%.
MRS Internet Journal of Nitride Semiconductor Research
E-beam pumped lasers are attractive for Laser Cathode Ray Tubes (LCRT) in projection displays and... more E-beam pumped lasers are attractive for Laser Cathode Ray Tubes (LCRT) in projection displays and a variety of applications typically associated with optically pumped lasers. For the first time an InGaN/GaN multiple quantum well (MQW) in-plane laser pumped by surface normal pulse and scanning electron beams was demonstrated. Pumping at room temperature (RT) and 80 K showed peak stimulated emission wavelengths of 402 and 409 nm with a full width half maximum (FWHM) of 0.6 nm and 1.2 nm, respectively. The threshold electron beam current densities have been estimated as 60 A/cm2 for 35 keV electron energy at 80 K using scanning e-beam pumping and 200-300 A/cm2 at RT using pulsed e-beam pumping with a maximum electron energy of 150 keV. At 80 K, light output of 150 mW was measured out of one facet at an e-beam current of 1.7 mA.
ABSTRACT ZnSe-based electron-beam pumped vertical-cavity surface-emitting lasers for the green (λ... more ABSTRACT ZnSe-based electron-beam pumped vertical-cavity surface-emitting lasers for the green (λ = 530 nm) and blue (λ = 462 nm) spectral region have been realized. Structures with and without epitaxial bottom distributed Bragg reflector have been fabricated and characterized. The samples consist of an active region containing 20 quantum wells with a cavity length varying between an optical thickness of 10 λ to 20 λ. The active material is ZnCdSSe in case of the green devices and ZnSe for the blue ones. Room temperature single mode lasing for structures with and without epitaxial bottom mirror with a maximum output power up to 5.9 W (green) and 3.3 W (blue) is achieved, respectively.
ABSTRACT A 60 mW output power has been achieved in mid-UV (λ = 270 nm) spontaneous sources with e... more ABSTRACT A 60 mW output power has been achieved in mid-UV (λ = 270 nm) spontaneous sources with electron-beam pulse-scanning pumping, fabricated from AlGaN MQW heterostructures grown by PA MBE on c-Al2O3 substrates. Under the CW pumping at much lower excitation power density the mid-UV sources demonstrate a 4.7 mW output power. In that regime the power efficiency of the structures is about 0.24%, while their internal quantum efficiency is estimated to be as high as 50%.
2008 4th International Conference on Advanced Optoelectronics and Lasers, 2008
A pulse (5 ns) semiconductor laser based on a GaInP/AlGaInP multi quantum well (MQW) structure wi... more A pulse (5 ns) semiconductor laser based on a GaInP/AlGaInP multi quantum well (MQW) structure with an AlAs/AlGaAs distributed Bragg reflector (DBR) and an external mirror was realised under optical pumping by emission of a frequency-doubled Q-modulated diode-pumped Nd-YAG laser. Lasing occurred at a wavelength of 625 nm in TEM00 mode with a peak output power of 3.1 W at a repetition rate of 6 kHz.
Pulsed lasing is obtained in a multilayer quantum-well InGaP/AlGaInP structure in a cavity with a... more Pulsed lasing is obtained in a multilayer quantum-well InGaP/AlGaInP structure in a cavity with an external mirror and a Bragg AlAs/AlGaAs mirror pumped by the 532-nm second harmonic from a diode-pumped Q-switched Nd:YAG laser. Lasing is obtained at the TEM00 fundamental transverse mode of the cavity at a wavelength of 625 nm. The pulse beam power was 3.1 W and
... Petr Kuznetsov*,1, Galina Yakushcheva1, Victor Jitov1, Leonid Zakharov1, Valery Lusanov1, Vla... more ... Petr Kuznetsov*,1, Galina Yakushcheva1, Victor Jitov1, Leonid Zakharov1, Valery Lusanov1, Vladimir Kozlovsky2, and Michael Tiberi3 ... [5] B. Urbaszek, C. Morhain, C. Bradford, CB O'Donnell, S. A. Telfer, X. Tang, A. Balocchi, KA Prior, BC Cavenett, CM Townsley, and RJ ...
ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band ... more ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure characterization. Decay of the ZnMgSSe solid solution in at least two phases was observed. Improvement in the quality of the crystal lattice and surface morphology was achieved by mismatching the ZnMgSSe from the GaAs substrate by increasing the lattice period by 0.24%.
Page 1. Electron Beam Pumped VCSEL Light Source ... The divergence angle of an eVCSEL as well as ... more Page 1. Electron Beam Pumped VCSEL Light Source ... The divergence angle of an eVCSEL as well as the coherence length is a function of cavity length. The light cone is confined to a 15° angle and the relatively low coherence of the laser eliminates speckle. ...
The notion ofusing a laser CRT as monochromatic light source for passive display technologies is ... more The notion ofusing a laser CRT as monochromatic light source for passive display technologies is discussed. Optimism for such an application is based on the high efficiency (more than O %) of "red" lasers obtained in GaInP/AlGaInP multi-quantum well (MQW) structures. A miniature vacuum tube designed as a light source is presented. Technological issues of achieving high efficiency in green
ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band ... more ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure characterization. Decay of the ZnMgSSe solid solution in at least two phases was observed. Improvement in the quality of the crystal lattice and surface morphology was achieved by mismatching the ZnMgSSe from the GaAs substrate by increasing the lattice period by 0.24%.
MRS Internet Journal of Nitride Semiconductor Research
E-beam pumped lasers are attractive for Laser Cathode Ray Tubes (LCRT) in projection displays and... more E-beam pumped lasers are attractive for Laser Cathode Ray Tubes (LCRT) in projection displays and a variety of applications typically associated with optically pumped lasers. For the first time an InGaN/GaN multiple quantum well (MQW) in-plane laser pumped by surface normal pulse and scanning electron beams was demonstrated. Pumping at room temperature (RT) and 80 K showed peak stimulated emission wavelengths of 402 and 409 nm with a full width half maximum (FWHM) of 0.6 nm and 1.2 nm, respectively. The threshold electron beam current densities have been estimated as 60 A/cm2 for 35 keV electron energy at 80 K using scanning e-beam pumping and 200-300 A/cm2 at RT using pulsed e-beam pumping with a maximum electron energy of 150 keV. At 80 K, light output of 150 mW was measured out of one facet at an e-beam current of 1.7 mA.
ABSTRACT ZnSe-based electron-beam pumped vertical-cavity surface-emitting lasers for the green (λ... more ABSTRACT ZnSe-based electron-beam pumped vertical-cavity surface-emitting lasers for the green (λ = 530 nm) and blue (λ = 462 nm) spectral region have been realized. Structures with and without epitaxial bottom distributed Bragg reflector have been fabricated and characterized. The samples consist of an active region containing 20 quantum wells with a cavity length varying between an optical thickness of 10 λ to 20 λ. The active material is ZnCdSSe in case of the green devices and ZnSe for the blue ones. Room temperature single mode lasing for structures with and without epitaxial bottom mirror with a maximum output power up to 5.9 W (green) and 3.3 W (blue) is achieved, respectively.
ABSTRACT A 60 mW output power has been achieved in mid-UV (λ = 270 nm) spontaneous sources with e... more ABSTRACT A 60 mW output power has been achieved in mid-UV (λ = 270 nm) spontaneous sources with electron-beam pulse-scanning pumping, fabricated from AlGaN MQW heterostructures grown by PA MBE on c-Al2O3 substrates. Under the CW pumping at much lower excitation power density the mid-UV sources demonstrate a 4.7 mW output power. In that regime the power efficiency of the structures is about 0.24%, while their internal quantum efficiency is estimated to be as high as 50%.
2008 4th International Conference on Advanced Optoelectronics and Lasers, 2008
A pulse (5 ns) semiconductor laser based on a GaInP/AlGaInP multi quantum well (MQW) structure wi... more A pulse (5 ns) semiconductor laser based on a GaInP/AlGaInP multi quantum well (MQW) structure with an AlAs/AlGaAs distributed Bragg reflector (DBR) and an external mirror was realised under optical pumping by emission of a frequency-doubled Q-modulated diode-pumped Nd-YAG laser. Lasing occurred at a wavelength of 625 nm in TEM00 mode with a peak output power of 3.1 W at a repetition rate of 6 kHz.
Pulsed lasing is obtained in a multilayer quantum-well InGaP/AlGaInP structure in a cavity with a... more Pulsed lasing is obtained in a multilayer quantum-well InGaP/AlGaInP structure in a cavity with an external mirror and a Bragg AlAs/AlGaAs mirror pumped by the 532-nm second harmonic from a diode-pumped Q-switched Nd:YAG laser. Lasing is obtained at the TEM00 fundamental transverse mode of the cavity at a wavelength of 625 nm. The pulse beam power was 3.1 W and
... Petr Kuznetsov*,1, Galina Yakushcheva1, Victor Jitov1, Leonid Zakharov1, Valery Lusanov1, Vla... more ... Petr Kuznetsov*,1, Galina Yakushcheva1, Victor Jitov1, Leonid Zakharov1, Valery Lusanov1, Vladimir Kozlovsky2, and Michael Tiberi3 ... [5] B. Urbaszek, C. Morhain, C. Bradford, CB O'Donnell, S. A. Telfer, X. Tang, A. Balocchi, KA Prior, BC Cavenett, CM Townsley, and RJ ...
ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band ... more ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure characterization. Decay of the ZnMgSSe solid solution in at least two phases was observed. Improvement in the quality of the crystal lattice and surface morphology was achieved by mismatching the ZnMgSSe from the GaAs substrate by increasing the lattice period by 0.24%.
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Papers by Michael Tiberi