Direct imaging of three-dimensional atomic structure of Ag(100} and Ag(111) surfaces by Fouriertr... more Direct imaging of three-dimensional atomic structure of Ag(100} and Ag(111) surfaces by Fouriertransforming the multiple-energy diffraction patterns of quasielastically scattered electrons is demonstrated experimentally. The holographic images obtained with an integral-energy phase-summing method are of high fidelity and free from artifacts. The resolution of the atomic images is-1 A in all spatial directions. The atoms down to three layers below the emitters are three dimensionally imaged. The contribution from backward-scattering and forward-scattering oscillations can be separately observed by varying the energy range used in Fourier transformation. The surface sensitivity can be enhanced by using an off-normal-incident geometry. With a limited energy range (-200 eV) used in Fourier transformation, the atoms behind the emitter in the backward direction are observed.
FinFET with: a substrate (101); a fin structure (102) on the substrate (101); a source (103) in t... more FinFET with: a substrate (101); a fin structure (102) on the substrate (101); a source (103) in the company structure (102); a drain (105) in the fin structure (102); a channel (111) in the company structure (102) between the source (103) and the drain (105); a gate dielectric layer (109) over the channel (111) and a gate over the gate dielectric layer (109), wherein the source (103) and the drain (105) is a SiGe underlayer (106) and a first layer (104a) consisting of SiP or SiCP and on the SiGe-backsheet (106) have.
The entropic forces on the self-retracting granular chains, which are confined in channels with d... more The entropic forces on the self-retracting granular chains, which are confined in channels with different widths, are determined. The time dependence of the length of chain remaining in the channel Lin(t) is measured. The entropic force is treated as the only parameter in fitting the solution of the nonlinear equation of motion of Lin(t) to the experimental data. The dependence of the entropic force on the width of the confining channel can be expressed as a power-law with an exponent of 1.3, which is consistent with the previous theoretical predictions for the entropy loss due to confinement.
The kinetics of the collapse of the coil state into condensed states is studied with vibrated gra... more The kinetics of the collapse of the coil state into condensed states is studied with vibrated granular chain composed of N metal beads partially immersed in water. The radius of gyration of the chain, R g is measured. For short chains (N < 140), disk-like condensed state is formed and R g decreases with time such that the function R g 2 (≡ R g 2 − R g 2 (∞)) = A e −t/τ , where the relaxation time τ follows a power-law dependence on the chain length N with an exponent γ = 1.9 ± 0.2. For the chains with length N ≥ 300, rod-like clusters are observed during the initial stage of collapse and R g 2 = R g 2 (0)-Bt β , with β = 0.6 ± 0.1. In the coarsening stage, the exponential dependence of R g 2 on time still holds, however, the relaxation time τ fluctuates and has no simple dependence on N. Furthermore, the time dependence of the averaged radius of gyration of the individual clusters, R g,cl can be described by the theory of Lifshitz and Slyozov. A peak in the structure function of long chains is observed in the initial stage of the collapse transition. The collapse transition in the bead chains is a first order phase transition. However, features of the spinodal decomposition are also observed.
This work investigates the effects of various contact integration schemes on tungsten (W) plug fo... more This work investigates the effects of various contact integration schemes on tungsten (W) plug formation. The deposition rate, surface morphology, sheet resistance and reflectivity of W deposited on various substrates are also characterized. Experimental results indicate that the titanium nitride (TiN) film which does not undergo post-rapid-thermal-processing (RTP) treatment has a higher W deposition rate than TiN film which under goes the post-RTP treatment. The W plug formed on chemical vapor deposition (CVD) TiN has easily found voids, which result in high contact resistance. To reveal the relationship of CVD TiN process conditions and W plug loss, process variables including film thickness, plasma ambient, in situ plasma treatment periods and cycles are tested. According to these results, plasma ambient has a strong influence on W plug loss during the etch-back process. In addition, the electrical characteristics of various contact integration schemes are examined in terms of bo...
PACS 45.70.-n-Granular systems PACS 45.50.-j-Dynamics and kinematics of a particle and a system o... more PACS 45.70.-n-Granular systems PACS 45.50.-j-Dynamics and kinematics of a particle and a system of particles PACS 51.10.+y-Kinetic and transport theory of gases Abstract-We find that a freely moving granular chain can be pushed, against the entropic force, into a confined cell if the passage to the cell is a channel of truncated-cone shape. In this setting, the granular chain, the cell and the channel can be considered as a mechanical analog of a DNA molecular, a bacteriophage and a portal motor, respectively. The force generated by the scaled-up analog of the mechanical motor and the packaging speed are found to be consistent with the real bacteriophage Φ29 portal motor. Pauses and slips found in single-molecule experiments of DNA packaging of the bacteriophage are also observed in the analog system.
The electronic conduction through the self-assembled monolayer ͑SAM͒ can be modulated by the elec... more The electronic conduction through the self-assembled monolayer ͑SAM͒ can be modulated by the electric potential applied to the silicon gate electrode surrounding the SAM. The dependence of the current through SAM on the gate voltage can be explained that the renormalized molecular energy levels are swept through the window between the Fermi levels of the source and drain electrodes. The effects of the lowest unoccupied molecular orbital and a hybrid energy level near the Fermi level in the transmission spectrum can be identified.
Increasing attention has been paid to the peripheral gate-oxide integrity degradation of Flash me... more Increasing attention has been paid to the peripheral gate-oxide integrity degradation of Flash memory devices that is induced by the tunnel-oxide nitridation. In this letter, the mechanisms of tunnel-oxide nitridation-induced degradation are characterized. We report that both a local oxide thinning effect and nitrogen residue will impact the integrity of gate-oxide. Minimizing the local thinning effect with an in situ steam generation (ISSG) oxidation process and removing the nitrogen residues from the silicon wafer surface by either an additional sacrificial oxide process or over-dip are proven to be useful in recovering the gate-oxide integrity. An optimum approach with the tunnel-oxide nitridation is proposed in this work that results in comparable or even better gate-oxide property than other approaches that have no tunneloxide nitridation process.
Direct imaging of three-dimensional atomic structure of Ag(100} and Ag(111) surfaces by Fouriertr... more Direct imaging of three-dimensional atomic structure of Ag(100} and Ag(111) surfaces by Fouriertransforming the multiple-energy diffraction patterns of quasielastically scattered electrons is demonstrated experimentally. The holographic images obtained with an integral-energy phase-summing method are of high fidelity and free from artifacts. The resolution of the atomic images is-1 A in all spatial directions. The atoms down to three layers below the emitters are three dimensionally imaged. The contribution from backward-scattering and forward-scattering oscillations can be separately observed by varying the energy range used in Fourier transformation. The surface sensitivity can be enhanced by using an off-normal-incident geometry. With a limited energy range (-200 eV) used in Fourier transformation, the atoms behind the emitter in the backward direction are observed.
FinFET with: a substrate (101); a fin structure (102) on the substrate (101); a source (103) in t... more FinFET with: a substrate (101); a fin structure (102) on the substrate (101); a source (103) in the company structure (102); a drain (105) in the fin structure (102); a channel (111) in the company structure (102) between the source (103) and the drain (105); a gate dielectric layer (109) over the channel (111) and a gate over the gate dielectric layer (109), wherein the source (103) and the drain (105) is a SiGe underlayer (106) and a first layer (104a) consisting of SiP or SiCP and on the SiGe-backsheet (106) have.
The entropic forces on the self-retracting granular chains, which are confined in channels with d... more The entropic forces on the self-retracting granular chains, which are confined in channels with different widths, are determined. The time dependence of the length of chain remaining in the channel Lin(t) is measured. The entropic force is treated as the only parameter in fitting the solution of the nonlinear equation of motion of Lin(t) to the experimental data. The dependence of the entropic force on the width of the confining channel can be expressed as a power-law with an exponent of 1.3, which is consistent with the previous theoretical predictions for the entropy loss due to confinement.
The kinetics of the collapse of the coil state into condensed states is studied with vibrated gra... more The kinetics of the collapse of the coil state into condensed states is studied with vibrated granular chain composed of N metal beads partially immersed in water. The radius of gyration of the chain, R g is measured. For short chains (N < 140), disk-like condensed state is formed and R g decreases with time such that the function R g 2 (≡ R g 2 − R g 2 (∞)) = A e −t/τ , where the relaxation time τ follows a power-law dependence on the chain length N with an exponent γ = 1.9 ± 0.2. For the chains with length N ≥ 300, rod-like clusters are observed during the initial stage of collapse and R g 2 = R g 2 (0)-Bt β , with β = 0.6 ± 0.1. In the coarsening stage, the exponential dependence of R g 2 on time still holds, however, the relaxation time τ fluctuates and has no simple dependence on N. Furthermore, the time dependence of the averaged radius of gyration of the individual clusters, R g,cl can be described by the theory of Lifshitz and Slyozov. A peak in the structure function of long chains is observed in the initial stage of the collapse transition. The collapse transition in the bead chains is a first order phase transition. However, features of the spinodal decomposition are also observed.
This work investigates the effects of various contact integration schemes on tungsten (W) plug fo... more This work investigates the effects of various contact integration schemes on tungsten (W) plug formation. The deposition rate, surface morphology, sheet resistance and reflectivity of W deposited on various substrates are also characterized. Experimental results indicate that the titanium nitride (TiN) film which does not undergo post-rapid-thermal-processing (RTP) treatment has a higher W deposition rate than TiN film which under goes the post-RTP treatment. The W plug formed on chemical vapor deposition (CVD) TiN has easily found voids, which result in high contact resistance. To reveal the relationship of CVD TiN process conditions and W plug loss, process variables including film thickness, plasma ambient, in situ plasma treatment periods and cycles are tested. According to these results, plasma ambient has a strong influence on W plug loss during the etch-back process. In addition, the electrical characteristics of various contact integration schemes are examined in terms of bo...
PACS 45.70.-n-Granular systems PACS 45.50.-j-Dynamics and kinematics of a particle and a system o... more PACS 45.70.-n-Granular systems PACS 45.50.-j-Dynamics and kinematics of a particle and a system of particles PACS 51.10.+y-Kinetic and transport theory of gases Abstract-We find that a freely moving granular chain can be pushed, against the entropic force, into a confined cell if the passage to the cell is a channel of truncated-cone shape. In this setting, the granular chain, the cell and the channel can be considered as a mechanical analog of a DNA molecular, a bacteriophage and a portal motor, respectively. The force generated by the scaled-up analog of the mechanical motor and the packaging speed are found to be consistent with the real bacteriophage Φ29 portal motor. Pauses and slips found in single-molecule experiments of DNA packaging of the bacteriophage are also observed in the analog system.
The electronic conduction through the self-assembled monolayer ͑SAM͒ can be modulated by the elec... more The electronic conduction through the self-assembled monolayer ͑SAM͒ can be modulated by the electric potential applied to the silicon gate electrode surrounding the SAM. The dependence of the current through SAM on the gate voltage can be explained that the renormalized molecular energy levels are swept through the window between the Fermi levels of the source and drain electrodes. The effects of the lowest unoccupied molecular orbital and a hybrid energy level near the Fermi level in the transmission spectrum can be identified.
Increasing attention has been paid to the peripheral gate-oxide integrity degradation of Flash me... more Increasing attention has been paid to the peripheral gate-oxide integrity degradation of Flash memory devices that is induced by the tunnel-oxide nitridation. In this letter, the mechanisms of tunnel-oxide nitridation-induced degradation are characterized. We report that both a local oxide thinning effect and nitrogen residue will impact the integrity of gate-oxide. Minimizing the local thinning effect with an in situ steam generation (ISSG) oxidation process and removing the nitrogen residues from the silicon wafer surface by either an additional sacrificial oxide process or over-dip are proven to be useful in recovering the gate-oxide integrity. An optimum approach with the tunnel-oxide nitridation is proposed in this work that results in comparable or even better gate-oxide property than other approaches that have no tunneloxide nitridation process.
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