FinFET with: a substrate (101); a fin structure (102) on the substrate (101); a source (103) in t... more FinFET with: a substrate (101); a fin structure (102) on the substrate (101); a source (103) in the company structure (102); a drain (105) in the fin structure (102); a channel (111) in the company structure (102) between the source (103) and the drain (105); a gate dielectric layer (109) over the channel (111) and a gate over the gate dielectric layer (109), wherein the source (103) and the drain (105) is a SiGe underlayer (106) and a first layer (104a) consisting of SiP or SiCP and on the SiGe-backsheet (106) have.
The entropic forces on the self-retracting granular chains, which are confined in channels with d... more The entropic forces on the self-retracting granular chains, which are confined in channels with different widths, are determined. The time dependence of the length of chain remaining in the channel Lin(t) is measured. The entropic force is treated as the only parameter in fitting the solution of the nonlinear equation of motion of Lin(t) to the experimental data. The dependence of the entropic force on the width of the confining channel can be expressed as a power-law with an exponent of 1.3, which is consistent with the previous theoretical predictions for the entropy loss due to confinement.
This work investigates the effects of various contact integration schemes on tungsten (W) plug fo... more This work investigates the effects of various contact integration schemes on tungsten (W) plug formation. The deposition rate, surface morphology, sheet resistance and reflectivity of W deposited on various substrates are also characterized. Experimental results indicate that the titanium nitride (TiN) film which does not undergo post-rapid-thermal-processing (RTP) treatment has a higher W deposition rate than TiN film which under goes the post-RTP treatment. The W plug formed on chemical vapor deposition (CVD) TiN has easily found voids, which result in high contact resistance. To reveal the relationship of CVD TiN process conditions and W plug loss, process variables including film thickness, plasma ambient, in situ plasma treatment periods and cycles are tested. According to these results, plasma ambient has a strong influence on W plug loss during the etch-back process. In addition, the electrical characteristics of various contact integration schemes are examined in terms of bo...
FinFET with: a substrate (101); a fin structure (102) on the substrate (101); a source (103) in t... more FinFET with: a substrate (101); a fin structure (102) on the substrate (101); a source (103) in the company structure (102); a drain (105) in the fin structure (102); a channel (111) in the company structure (102) between the source (103) and the drain (105); a gate dielectric layer (109) over the channel (111) and a gate over the gate dielectric layer (109), wherein the source (103) and the drain (105) is a SiGe underlayer (106) and a first layer (104a) consisting of SiP or SiCP and on the SiGe-backsheet (106) have.
The entropic forces on the self-retracting granular chains, which are confined in channels with d... more The entropic forces on the self-retracting granular chains, which are confined in channels with different widths, are determined. The time dependence of the length of chain remaining in the channel Lin(t) is measured. The entropic force is treated as the only parameter in fitting the solution of the nonlinear equation of motion of Lin(t) to the experimental data. The dependence of the entropic force on the width of the confining channel can be expressed as a power-law with an exponent of 1.3, which is consistent with the previous theoretical predictions for the entropy loss due to confinement.
This work investigates the effects of various contact integration schemes on tungsten (W) plug fo... more This work investigates the effects of various contact integration schemes on tungsten (W) plug formation. The deposition rate, surface morphology, sheet resistance and reflectivity of W deposited on various substrates are also characterized. Experimental results indicate that the titanium nitride (TiN) film which does not undergo post-rapid-thermal-processing (RTP) treatment has a higher W deposition rate than TiN film which under goes the post-RTP treatment. The W plug formed on chemical vapor deposition (CVD) TiN has easily found voids, which result in high contact resistance. To reveal the relationship of CVD TiN process conditions and W plug loss, process variables including film thickness, plasma ambient, in situ plasma treatment periods and cycles are tested. According to these results, plasma ambient has a strong influence on W plug loss during the etch-back process. In addition, the electrical characteristics of various contact integration schemes are examined in terms of bo...
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