The absorption spectrum near the fundamental absorption edge of an-type CuInSe2 single crystal gr... more The absorption spectrum near the fundamental absorption edge of an-type CuInSe2 single crystal grown by the Bridgman method has been studied at 100 and 300 K. An absorption edge corresponding to the direct-band-gap transition is observed at about 1 eV. An additional absorption is observed at lower energies ((0.93÷0.95) eV) and is attributed to direct transitions assisted by long-wave-length optical phonons. Lo spettro di assorbimento vicino al bordo di assorbimento fondamentale di un cristallo singolo di tipon di CuInSe2, cresciuto col metodo di Bridgman, è stato studiato a 100 e 300 K. Si osserva un bordo di assorbimento in corrispondenza della transizione del gap di banda diretta a circa 1 eV. Un ulteriore assorbimento è osservato a energie inferiori ((0.93÷0.95) eV) ed è attribuito a transizioni dirette alla presenza di fononi ottici a grande lunghezza d'onda. При 100 К и 300 К исследуется спектр поглощения вблизи основного края поглощения монокристалла CuInSe2n-типа, выращенного по методу Ъридгмана, Вблизи 1 эВ обнаружен край поглощения, соответствующий прямому переходу. Дополнительное поглощение наблюдается при меньших энергиях ((0.93÷0.95) эВ) и приписывается прямым переходом, связанным с длинноволновыми оптическими фононами.
The photoluminescence spectrum of melt-grown n-CuInSe2 single crystal at 7 K, has been determined... more The photoluminescence spectrum of melt-grown n-CuInSe2 single crystal at 7 K, has been determined near the fundamental absorption edge. Three peaks, at approximately 0.980, 0.990, and 1.013 eV, have been observed. Considering the transition probabilities of recombination processes, donor-to-acceptor pair and the corresponding free-to-bound transitions have been identified. From the data, an absorption edge at (1.023 + or 0.003) eV, a donor state at (10 + or - 2) meV, and an acceptor state at (33 + or - 2) meV have been determined.
The absorption spectrum near the fundamental absorption edge of an-type CuInSe2 single crystal gr... more The absorption spectrum near the fundamental absorption edge of an-type CuInSe2 single crystal grown by the Bridgman method has been studied at 100 and 300 K. An absorption edge corresponding to the direct-band-gap transition is observed at about 1 eV. An additional absorption is observed at lower energies ((0.93÷0.95) eV) and is attributed to direct transitions assisted by long-wave-length optical phonons. Lo spettro di assorbimento vicino al bordo di assorbimento fondamentale di un cristallo singolo di tipon di CuInSe2, cresciuto col metodo di Bridgman, è stato studiato a 100 e 300 K. Si osserva un bordo di assorbimento in corrispondenza della transizione del gap di banda diretta a circa 1 eV. Un ulteriore assorbimento è osservato a energie inferiori ((0.93÷0.95) eV) ed è attribuito a transizioni dirette alla presenza di fononi ottici a grande lunghezza d'onda. При 100 К и 300 К исследуется спектр поглощения вблизи основного края поглощения монокристалла CuInSe2n-типа, выращенного по методу Ъридгмана, Вблизи 1 эВ обнаружен край поглощения, соответствующий прямому переходу. Дополнительное поглощение наблюдается при меньших энергиях ((0.93÷0.95) эВ) и приписывается прямым переходом, связанным с длинноволновыми оптическими фононами.
The photoluminescence spectrum of melt-grown n-CuInSe2 single crystal at 7 K, has been determined... more The photoluminescence spectrum of melt-grown n-CuInSe2 single crystal at 7 K, has been determined near the fundamental absorption edge. Three peaks, at approximately 0.980, 0.990, and 1.013 eV, have been observed. Considering the transition probabilities of recombination processes, donor-to-acceptor pair and the corresponding free-to-bound transitions have been identified. From the data, an absorption edge at (1.023 + or 0.003) eV, a donor state at (10 + or - 2) meV, and an acceptor state at (33 + or - 2) meV have been determined.
Uploads
Papers by CARLOS RINCON