The creep behaviour of fine wires of pure powder metallurgical tungsten was studied over the temp... more The creep behaviour of fine wires of pure powder metallurgical tungsten was studied over the temperature range 2100–3100°C. It was found that the steady-state creep rate is given by This result differs substantially from other reported work performed on specimens of larger diameter of polycrystalline pure tungsten. The difference is due to the fact that in the fine wire specimens
After a silicon slice with a mechanically damaged surface was annealed at 1200°C for 2 hours in w... more After a silicon slice with a mechanically damaged surface was annealed at 1200°C for 2 hours in wet oxygen, two-dimensional defects were present extending from the surface into the slice. The defects are shown to be thin plates of amorphous material, probably oxide, and it is suggested that they arise by a mechanism analogous to that described by Silcock and
... Of the various replica techniques (Reimer 1959, Kay 1961). the direct cnrhon-replica (Bradley... more ... Of the various replica techniques (Reimer 1959, Kay 1961). the direct cnrhon-replica (Bradley 1956) has given high tidclity, in addition to being very easily prepared. ... sot, 107, 562. KAY, D., 1961, Techniques for Electron Microscopy, (Oxford: Blackwell). REIMER. ...
A method is described for the preparation of wire samples for transmission electron microscopy. T... more A method is described for the preparation of wire samples for transmission electron microscopy. The specimen preparation involves three consecutive steps, i.e. pregrinding, electrolytic microjet machining and final bath polishing. By this method electron transparent areas of wires less than 1 mm in diameter can be prepared in less than one hour. Further advantages of this method are that the area of examination can be located very accurately, specimen deformation due to handling is avoided, and very brittle materials can be prepared conveniently.
Single crystal Si specimens have been unidirectionally abraded, the abrasives ranging from 0•25 m... more Single crystal Si specimens have been unidirectionally abraded, the abrasives ranging from 0•25 micron diamond to No. 240 SiC paper, and examined by transmission electron microscopy and standard metallographic methods. The investigation showed that the damage varied in a progressive manner with the severity of the abrasion treatment, ranging from rows of single dislocations to bands of both dislocation networks
The creep behaviour of fine wires of pure powder metallurgical tungsten was studied over the temp... more The creep behaviour of fine wires of pure powder metallurgical tungsten was studied over the temperature range 2100–3100°C. It was found that the steady-state creep rate is given by This result differs substantially from other reported work performed on specimens of larger diameter of polycrystalline pure tungsten. The difference is due to the fact that in the fine wire specimens
After a silicon slice with a mechanically damaged surface was annealed at 1200°C for 2 hours in w... more After a silicon slice with a mechanically damaged surface was annealed at 1200°C for 2 hours in wet oxygen, two-dimensional defects were present extending from the surface into the slice. The defects are shown to be thin plates of amorphous material, probably oxide, and it is suggested that they arise by a mechanism analogous to that described by Silcock and
... Of the various replica techniques (Reimer 1959, Kay 1961). the direct cnrhon-replica (Bradley... more ... Of the various replica techniques (Reimer 1959, Kay 1961). the direct cnrhon-replica (Bradley 1956) has given high tidclity, in addition to being very easily prepared. ... sot, 107, 562. KAY, D., 1961, Techniques for Electron Microscopy, (Oxford: Blackwell). REIMER. ...
A method is described for the preparation of wire samples for transmission electron microscopy. T... more A method is described for the preparation of wire samples for transmission electron microscopy. The specimen preparation involves three consecutive steps, i.e. pregrinding, electrolytic microjet machining and final bath polishing. By this method electron transparent areas of wires less than 1 mm in diameter can be prepared in less than one hour. Further advantages of this method are that the area of examination can be located very accurately, specimen deformation due to handling is avoided, and very brittle materials can be prepared conveniently.
Single crystal Si specimens have been unidirectionally abraded, the abrasives ranging from 0•25 m... more Single crystal Si specimens have been unidirectionally abraded, the abrasives ranging from 0•25 micron diamond to No. 240 SiC paper, and examined by transmission electron microscopy and standard metallographic methods. The investigation showed that the damage varied in a progressive manner with the severity of the abrasion treatment, ranging from rows of single dislocations to bands of both dislocation networks
Uploads
Papers by R. Stickler