The structure of monoatomic steps on (001)-vicinal surface of Kossel crystal is investigated theo... more The structure of monoatomic steps on (001)-vicinal surface of Kossel crystal is investigated theoretically. We consider all step directions except for relatively small vicinities of <10>-directions. The structure of such steps at sufficiently low temperature is shown to be controlled only by interaction between second nearest neighbors. If this interaction is repulsive, steps have saw-like shape, while attractive interaction leads to straightening of steps. More general case of nonpairwise interactions is also considered.
We report the observation of THz photovoltage in double quantum wells in tilted magnetic field. T... more We report the observation of THz photovoltage in double quantum wells in tilted magnetic field. The signal appears at the normal component of the magnetic field corresponding to the electron cyclotron resonance conditions and directly related to electron CR absorption. The phenomenon is accounted for by a photovoltaic effect in both electron-electron and electron-hole bilayer systems.
High Speed Phenomena in Photonic Materials and Optical Bistability, 1990
The new type of seif-electrooptic--effect--device is presented. Optical nonlinearity and bistabil... more The new type of seif-electrooptic--effect--device is presented. Optical nonlinearity and bistability due to the internal electric field redistribution in nonuniform i-layer of double GaAs/A1GaAs PIN heterostructure are achieved.
We calculate the multiphonon transition rate from the excited state of a single-occupied two-leve... more We calculate the multiphonon transition rate from the excited state of a single-occupied two-level quantum dot. The electron interacts with certain optical phonon modes which in turn transfer the transition energy to the bath of other phonon modes decoupled from the electron states. Our theory covers the previously unexplored range of transition energies several times larger than the optical phonon energy and systematically studies the role of quantum interference of the processes involving different virtual polaron states.
A model is presented which explains the high degree of linear polarization of luminescence which ... more A model is presented which explains the high degree of linear polarization of luminescence which was observed in porous silicon under non-resonant excitation. Porous silicon is supposed to be composed of elongated nanocrystals. We show that because of the anisotropy of the depolarizing field in silicon needles polarized light excites preferentially those nanocrystals which emit light with the same polarization
The kinetic mechanism of defect formation on a vicinal surface misoriented in two directions, in ... more The kinetic mechanism of defect formation on a vicinal surface misoriented in two directions, in the case of molecular-beam epitaxy, is studied. These defects are two adatoms stuck together in a potential trench near the step edge. The effects of the surface parameters, as well as growth rate on the probability of defect formation are studied. It is shown that an increase in the misorientation angle of the surface is conducive to a drastic decrease in the number of defects during growth.
The structure of monoatomic steps on (001)-vicinal surface of Kossel crystal is investigated theo... more The structure of monoatomic steps on (001)-vicinal surface of Kossel crystal is investigated theoretically. We consider all step directions except for relatively small vicinities of <10>-directions. The structure of such steps at sufficiently low temperature is shown to be controlled only by interaction between second nearest neighbors. If this interaction is repulsive, steps have saw-like shape, while attractive interaction leads to straightening of steps. More general case of nonpairwise interactions is also considered.
We report the observation of THz photovoltage in double quantum wells in tilted magnetic field. T... more We report the observation of THz photovoltage in double quantum wells in tilted magnetic field. The signal appears at the normal component of the magnetic field corresponding to the electron cyclotron resonance conditions and directly related to electron CR absorption. The phenomenon is accounted for by a photovoltaic effect in both electron-electron and electron-hole bilayer systems.
High Speed Phenomena in Photonic Materials and Optical Bistability, 1990
The new type of seif-electrooptic--effect--device is presented. Optical nonlinearity and bistabil... more The new type of seif-electrooptic--effect--device is presented. Optical nonlinearity and bistability due to the internal electric field redistribution in nonuniform i-layer of double GaAs/A1GaAs PIN heterostructure are achieved.
We calculate the multiphonon transition rate from the excited state of a single-occupied two-leve... more We calculate the multiphonon transition rate from the excited state of a single-occupied two-level quantum dot. The electron interacts with certain optical phonon modes which in turn transfer the transition energy to the bath of other phonon modes decoupled from the electron states. Our theory covers the previously unexplored range of transition energies several times larger than the optical phonon energy and systematically studies the role of quantum interference of the processes involving different virtual polaron states.
A model is presented which explains the high degree of linear polarization of luminescence which ... more A model is presented which explains the high degree of linear polarization of luminescence which was observed in porous silicon under non-resonant excitation. Porous silicon is supposed to be composed of elongated nanocrystals. We show that because of the anisotropy of the depolarizing field in silicon needles polarized light excites preferentially those nanocrystals which emit light with the same polarization
The kinetic mechanism of defect formation on a vicinal surface misoriented in two directions, in ... more The kinetic mechanism of defect formation on a vicinal surface misoriented in two directions, in the case of molecular-beam epitaxy, is studied. These defects are two adatoms stuck together in a potential trench near the step edge. The effects of the surface parameters, as well as growth rate on the probability of defect formation are studied. It is shown that an increase in the misorientation angle of the surface is conducive to a drastic decrease in the number of defects during growth.
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Papers by Robert Suris