In this paper, we propose a comparative method to analyze a complex microwave structure consistin... more In this paper, we propose a comparative method to analyze a complex microwave structure consisting of a silicon-based coplanar waveguide line and four electric-LC resonators, thus forming a wideband microwave band-stop filter that can be easily integrated at the wafer level together with other devices and sub-systems for large-scale production of high-frequency electronics. A rigorous and careful approach is needed when choosing the proper simulation settings and, as a good rule of thumb, both time and frequency domains should provide the same results. Furthermore, the experimental validation requires supplementary components (like connectors), often ignored when designing an electromagnetic structure highly impacting on the overall performance. In this work, we go in depth into all these issues and show how the right choices in terms of computational parameters can lead to a good agreement with the measurements of the proposed CMOS-compatible band-stop filter in the band 2–18 GHz, ...
Journal of Micromechanics and Microengineering, 2000
... Marcelli R 1998 Proc. 9th Micromechanics Europe Workshop MME'98 (Ulvik i... more ... Marcelli R 1998 Proc. 9th Micromechanics Europe Workshop MME'98 (Ulvik in Hardanger, Norway, June) pp 1514 [11] Müller A, Marcelli R, Petrini I, Avramescu V, Iordanescu S and Vasilache D 1997 Eur. Semiconductor 11 27 ...
In this paper we report a method for 0-level encapsulation using thin films deposition at tempera... more In this paper we report a method for 0-level encapsulation using thin films deposition at temperatures below 200°C. The packaging method allows the use of photoresist as sacrificial layer, which facilitates sacrificial layer removal, being compatible with micromachining and CMOS integration This package was tested on an RF MEMS switch structure for K to W frequency bands (20-110GHz) and shows a very small influence over S parameters for all frequency range.
2019 49th European Microwave Conference (EuMC), 2019
In this paper, we propose a rectenna based on a graphene self-switching diode for Ka band applica... more In this paper, we propose a rectenna based on a graphene self-switching diode for Ka band applications in view of the upcoming 5G and internet-of-things telecommunication systems. A 4-element patch antenna array has been designed, simulated, and fabricated using a high-resistivity silicon/silicon dioxide/graphene multi-layer and tested on-wafer. By using analytical formulas to optimize the number of parallel channels for the diode, we have achieved highly improved DC current values (average value of ±2mA at ±3V). The diode has been integrated with the array in coplanar waveguide technology using a matching open stub, in order to maximize the array-to-diode power transfer. The rectenna has then been measured by using a 28GHz RF source: at 0V DC bias, a maximum DC voltage VDC of 2.4mV has been obtained, with a maximum DC current IDC of 1.2µA and a maximum DC power PDC of 2.9nW; when applying a small DC bias (1.2V), VDC reaches 71mV, IDC=35.5µA and PDC=2.5µW.
2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486)
This paper presents measurements of micromechanical properties of thin polyimide membranes realis... more This paper presents measurements of micromechanical properties of thin polyimide membranes realised by micromachining of SI GaAs substrate, as well as the residual stress analysis of these membranes. AFM, SEM, and white light interferometry as well as a residual stress measurement procedure, have been used
2021 IEEE MTT-S International Microwave Symposium (IMS), 2021
In this paper, a two-dimensional material-based diode for microwave detection at 2.49 GHz with ph... more In this paper, a two-dimensional material-based diode for microwave detection at 2.49 GHz with photo detector capabilities is presented. The diode consists of a molybdenum disulphide monolayer/graphene monolayer heterojunction transferred onto a silicon/silicon dioxide substrate, and patterned by means of nanolithography techniques to obtain a geometrical self-switching diode. The interaction between the two monolayers gives rise to a double-stage device, which behaves as a back-to-back diode in the [−3, +3] V range, and as a tunnel diode when exceeding +10 V. The heterojunction can be reproduced on large scale due to its CMOS compatibility; it does not need any particular doping process thanks to its geometrical nature and can be used efficiently as microwave detector up to 10 GHz, with the best performance around the ISM 2.45 GHz band. Last, a rigorous equivalent circuit model based on the Foster's method is provided, which relies on the measured scattering parameters at high frequencies. This way, the device can be exploited in circuit-based numerical tools for the desian of complex microwave front-ends.
2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486)
This paper presents measurements of micromechanical properties of thin polyimide membranes realis... more This paper presents measurements of micromechanical properties of thin polyimide membranes realised by micromachining of SI GaAs substrate, as well as the residual stress analysis of these membranes. AFM, SEM, and white light interferometry as well as a residual stress measurement procedure, have been used
We present a comprehensive review of the emerging nanoscale ferroelectric materials used in novel... more We present a comprehensive review of the emerging nanoscale ferroelectric materials used in novel nanoelectronics devices. First, we outline specific physical and electronic properties of ferroelectric materials, then we focus on two main classes of ferroelectrics based on hafnium oxide (HfO2) and 2D materials. The former exhibits unique characteristics, making it the target of subsequent discussions. Their remanent polarization, coercive field, permittivity, nanometric scale thickness (up to 10 nm), and CMOS compatibility distinguish HfO2 compounds from any other existing ferroelectrics. The ever increasing need to integrate nanotechnology with electronics has given rise to the realization of newer conceptual devices and components based on ferroelectric HfO2, such as phase shifters, phased antenna arrays (PAAs), filters, field-effect transistors (FETs,) ferroelectric tunneling junctions (FTJs), memristors/memtransistors (neuromorphic nanoelectronics), and negative capacitance ferroelectric transistors. For each of these applications, we present state-of-the-art solutions that were designed, fabricated, and tested. At the same time, the main drawbacks (especially those related to materials and technological issues) are discussed. This article provides an in-depth overview of present and future challenges in the domain of ferroelectric-based nanoelectronics, with the hope that it will trigger the curiosity of researchers interested in the further advancement of this emerging field of science.
2021 IEEE MTT-S International Microwave Symposium (IMS), 2021
In this paper, a two-dimensional material-based diode for microwave detection at 2.49 GHz with ph... more In this paper, a two-dimensional material-based diode for microwave detection at 2.49 GHz with photo detector capabilities is presented. The diode consists of a molybdenum disulphide monolayer/graphene monolayer heterojunction transferred onto a silicon/silicon dioxide substrate, and patterned by means of nanolithography techniques to obtain a geometrical self-switching diode. The interaction between the two monolayers gives rise to a double-stage device, which behaves as a back-to-back diode in the [−3, +3] V range, and as a tunnel diode when exceeding +10 V. The heterojunction can be reproduced on large scale due to its CMOS compatibility; it does not need any particular doping process thanks to its geometrical nature and can be used efficiently as microwave detector up to 10 GHz, with the best performance around the ISM 2.45 GHz band. Last, a rigorous equivalent circuit model based on the Foster's method is provided, which relies on the measured scattering parameters at high frequencies. This way, the device can be exploited in circuit-based numerical tools for the desian of complex microwave front-ends.
We present a comprehensive review of the emerging nanoscale ferroelectric materials used in novel... more We present a comprehensive review of the emerging nanoscale ferroelectric materials used in novel nanoelectronics devices. First, we outline specific physical and electronic properties of ferroelectric materials, then we focus on two main classes of ferroelectrics based on hafnium oxide (HfO2) and 2D materials. The former exhibits unique characteristics, making it the target of subsequent discussions. Their remanent polarization, coercive field, permittivity, nanometric scale thickness (up to 10 nm), and CMOS compatibility distinguish HfO2 compounds from any other existing ferroelectrics. The ever increasing need to integrate nanotechnology with electronics has given rise to the realization of newer conceptual devices and components based on ferroelectric HfO2, such as phase shifters, phased antenna arrays (PAAs), filters, field-effect transistors (FETs,) ferroelectric tunneling junctions (FTJs), memristors/memtransistors (neuromorphic nanoelectronics), and negative capacitance ferroelectric transistors. For each of these applications, we present state-of-the-art solutions that were designed, fabricated, and tested. At the same time, the main drawbacks (especially those related to materials and technological issues) are discussed. This article provides an in-depth overview of present and future challenges in the domain of ferroelectric-based nanoelectronics, with the hope that it will trigger the curiosity of researchers interested in the further advancement of this emerging field of science.
2015 International Semiconductor Conference (CAS), 2015
In this paper a method to obtain a graphene/polymer nanocomposite film laminated into a PET sandw... more In this paper a method to obtain a graphene/polymer nanocomposite film laminated into a PET sandwich structure with improved EMI shielding was investigated. The composite was characterized by FTIR spectroscopy, X-ray diffraction, AFM, SEM microscopy and Raman spectroscopy. The EMI shielding effectiveness was evaluated in 8-12.5 GHz X-band frequencies for different ratio between graphene filler and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate matrix at different thickness of nanocomposite.
In this paper, we propose a comparative method to analyze a complex microwave structure consistin... more In this paper, we propose a comparative method to analyze a complex microwave structure consisting of a silicon-based coplanar waveguide line and four electric-LC resonators, thus forming a wideband microwave band-stop filter that can be easily integrated at the wafer level together with other devices and sub-systems for large-scale production of high-frequency electronics. A rigorous and careful approach is needed when choosing the proper simulation settings and, as a good rule of thumb, both time and frequency domains should provide the same results. Furthermore, the experimental validation requires supplementary components (like connectors), often ignored when designing an electromagnetic structure highly impacting on the overall performance. In this work, we go in depth into all these issues and show how the right choices in terms of computational parameters can lead to a good agreement with the measurements of the proposed CMOS-compatible band-stop filter in the band 2–18 GHz, ...
Journal of Micromechanics and Microengineering, 2000
... Marcelli R 1998 Proc. 9th Micromechanics Europe Workshop MME'98 (Ulvik i... more ... Marcelli R 1998 Proc. 9th Micromechanics Europe Workshop MME'98 (Ulvik in Hardanger, Norway, June) pp 1514 [11] Müller A, Marcelli R, Petrini I, Avramescu V, Iordanescu S and Vasilache D 1997 Eur. Semiconductor 11 27 ...
In this paper we report a method for 0-level encapsulation using thin films deposition at tempera... more In this paper we report a method for 0-level encapsulation using thin films deposition at temperatures below 200°C. The packaging method allows the use of photoresist as sacrificial layer, which facilitates sacrificial layer removal, being compatible with micromachining and CMOS integration This package was tested on an RF MEMS switch structure for K to W frequency bands (20-110GHz) and shows a very small influence over S parameters for all frequency range.
2019 49th European Microwave Conference (EuMC), 2019
In this paper, we propose a rectenna based on a graphene self-switching diode for Ka band applica... more In this paper, we propose a rectenna based on a graphene self-switching diode for Ka band applications in view of the upcoming 5G and internet-of-things telecommunication systems. A 4-element patch antenna array has been designed, simulated, and fabricated using a high-resistivity silicon/silicon dioxide/graphene multi-layer and tested on-wafer. By using analytical formulas to optimize the number of parallel channels for the diode, we have achieved highly improved DC current values (average value of ±2mA at ±3V). The diode has been integrated with the array in coplanar waveguide technology using a matching open stub, in order to maximize the array-to-diode power transfer. The rectenna has then been measured by using a 28GHz RF source: at 0V DC bias, a maximum DC voltage VDC of 2.4mV has been obtained, with a maximum DC current IDC of 1.2µA and a maximum DC power PDC of 2.9nW; when applying a small DC bias (1.2V), VDC reaches 71mV, IDC=35.5µA and PDC=2.5µW.
2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486)
This paper presents measurements of micromechanical properties of thin polyimide membranes realis... more This paper presents measurements of micromechanical properties of thin polyimide membranes realised by micromachining of SI GaAs substrate, as well as the residual stress analysis of these membranes. AFM, SEM, and white light interferometry as well as a residual stress measurement procedure, have been used
2021 IEEE MTT-S International Microwave Symposium (IMS), 2021
In this paper, a two-dimensional material-based diode for microwave detection at 2.49 GHz with ph... more In this paper, a two-dimensional material-based diode for microwave detection at 2.49 GHz with photo detector capabilities is presented. The diode consists of a molybdenum disulphide monolayer/graphene monolayer heterojunction transferred onto a silicon/silicon dioxide substrate, and patterned by means of nanolithography techniques to obtain a geometrical self-switching diode. The interaction between the two monolayers gives rise to a double-stage device, which behaves as a back-to-back diode in the [−3, +3] V range, and as a tunnel diode when exceeding +10 V. The heterojunction can be reproduced on large scale due to its CMOS compatibility; it does not need any particular doping process thanks to its geometrical nature and can be used efficiently as microwave detector up to 10 GHz, with the best performance around the ISM 2.45 GHz band. Last, a rigorous equivalent circuit model based on the Foster's method is provided, which relies on the measured scattering parameters at high frequencies. This way, the device can be exploited in circuit-based numerical tools for the desian of complex microwave front-ends.
2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486)
This paper presents measurements of micromechanical properties of thin polyimide membranes realis... more This paper presents measurements of micromechanical properties of thin polyimide membranes realised by micromachining of SI GaAs substrate, as well as the residual stress analysis of these membranes. AFM, SEM, and white light interferometry as well as a residual stress measurement procedure, have been used
We present a comprehensive review of the emerging nanoscale ferroelectric materials used in novel... more We present a comprehensive review of the emerging nanoscale ferroelectric materials used in novel nanoelectronics devices. First, we outline specific physical and electronic properties of ferroelectric materials, then we focus on two main classes of ferroelectrics based on hafnium oxide (HfO2) and 2D materials. The former exhibits unique characteristics, making it the target of subsequent discussions. Their remanent polarization, coercive field, permittivity, nanometric scale thickness (up to 10 nm), and CMOS compatibility distinguish HfO2 compounds from any other existing ferroelectrics. The ever increasing need to integrate nanotechnology with electronics has given rise to the realization of newer conceptual devices and components based on ferroelectric HfO2, such as phase shifters, phased antenna arrays (PAAs), filters, field-effect transistors (FETs,) ferroelectric tunneling junctions (FTJs), memristors/memtransistors (neuromorphic nanoelectronics), and negative capacitance ferroelectric transistors. For each of these applications, we present state-of-the-art solutions that were designed, fabricated, and tested. At the same time, the main drawbacks (especially those related to materials and technological issues) are discussed. This article provides an in-depth overview of present and future challenges in the domain of ferroelectric-based nanoelectronics, with the hope that it will trigger the curiosity of researchers interested in the further advancement of this emerging field of science.
2021 IEEE MTT-S International Microwave Symposium (IMS), 2021
In this paper, a two-dimensional material-based diode for microwave detection at 2.49 GHz with ph... more In this paper, a two-dimensional material-based diode for microwave detection at 2.49 GHz with photo detector capabilities is presented. The diode consists of a molybdenum disulphide monolayer/graphene monolayer heterojunction transferred onto a silicon/silicon dioxide substrate, and patterned by means of nanolithography techniques to obtain a geometrical self-switching diode. The interaction between the two monolayers gives rise to a double-stage device, which behaves as a back-to-back diode in the [−3, +3] V range, and as a tunnel diode when exceeding +10 V. The heterojunction can be reproduced on large scale due to its CMOS compatibility; it does not need any particular doping process thanks to its geometrical nature and can be used efficiently as microwave detector up to 10 GHz, with the best performance around the ISM 2.45 GHz band. Last, a rigorous equivalent circuit model based on the Foster's method is provided, which relies on the measured scattering parameters at high frequencies. This way, the device can be exploited in circuit-based numerical tools for the desian of complex microwave front-ends.
We present a comprehensive review of the emerging nanoscale ferroelectric materials used in novel... more We present a comprehensive review of the emerging nanoscale ferroelectric materials used in novel nanoelectronics devices. First, we outline specific physical and electronic properties of ferroelectric materials, then we focus on two main classes of ferroelectrics based on hafnium oxide (HfO2) and 2D materials. The former exhibits unique characteristics, making it the target of subsequent discussions. Their remanent polarization, coercive field, permittivity, nanometric scale thickness (up to 10 nm), and CMOS compatibility distinguish HfO2 compounds from any other existing ferroelectrics. The ever increasing need to integrate nanotechnology with electronics has given rise to the realization of newer conceptual devices and components based on ferroelectric HfO2, such as phase shifters, phased antenna arrays (PAAs), filters, field-effect transistors (FETs,) ferroelectric tunneling junctions (FTJs), memristors/memtransistors (neuromorphic nanoelectronics), and negative capacitance ferroelectric transistors. For each of these applications, we present state-of-the-art solutions that were designed, fabricated, and tested. At the same time, the main drawbacks (especially those related to materials and technological issues) are discussed. This article provides an in-depth overview of present and future challenges in the domain of ferroelectric-based nanoelectronics, with the hope that it will trigger the curiosity of researchers interested in the further advancement of this emerging field of science.
2015 International Semiconductor Conference (CAS), 2015
In this paper a method to obtain a graphene/polymer nanocomposite film laminated into a PET sandw... more In this paper a method to obtain a graphene/polymer nanocomposite film laminated into a PET sandwich structure with improved EMI shielding was investigated. The composite was characterized by FTIR spectroscopy, X-ray diffraction, AFM, SEM microscopy and Raman spectroscopy. The EMI shielding effectiveness was evaluated in 8-12.5 GHz X-band frequencies for different ratio between graphene filler and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate matrix at different thickness of nanocomposite.
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Papers by Sergiu Iordanescu