Journal of Materials Science: Materials in Electronics, 2012
ABSTRACT Quaternary semiconductor Cu2ZnSnSe4 (CZTSe) is a very promising alternative to semicondu... more ABSTRACT Quaternary semiconductor Cu2ZnSnSe4 (CZTSe) is a very promising alternative to semiconductors based on indium (In) and gallium (Ga) as solar absorber material due to its direct band gap, inherent high absorption coefficient (>104 cm−1) and abundance of cheap elements zinc (Zn) and tin (Sn). In this study, high quality CZTSe thin films were successfully synthesized by a green and low-cost solution based non-vacuum method, which involves spin coating non-toxic solvent-based CZTSe nano-inks onto Mo coated soda lime glass substrates followed by selenization with elemental Se vapor. The effect of selenization temperature on structural, morphological, compositional and optical properties of CZTSe films are investigated using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and photoluminescence spectroscopy. XRD and Raman analysis indicates that a tetragonal stannite-type structured CZTSe is formed. Depend on the selenization temperature, the dense and compact films with grain sizes from 200 nm (500 °C) up to about 1 μm (580 °C) are obtained. EDS measurement indicates that the composition ratios of the prepared CZTSe films are copper-poor and zinc-rich nature. The CZTSe films are p-type conductivity confirmed by a hot point probe method. Photoluminescence spectrum shows slightly asymmetric narrow bands with a maximum of intensity at 0.92 eV. The dependence of the photoluminescence on the excitation temperature reveals a decrease in the intensity of the photoluminescence bands. An absorption coefficient exceeding 104 cm−1 and the band gap energy about 0.87 eV of the studied films are determined by an absorption spectroscopy.
In this research, zinc oxide nanorods were prepared by chemical bath deposition method (CBD) thro... more In this research, zinc oxide nanorods were prepared by chemical bath deposition method (CBD) through using raw materials on the glass substrate. The crystalline structure, surface morphology, elemental composition and optical properties of ZnO were studied by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectrometers (energy-dispersive X-ray spectroscopy EDXS), and UV-vis spectrophotometer, respectively. The sensing properties of the ZnO nanorod arrays were determined for different flows and temperatures. The results indicate that the ZnO nanorods have good sensitivity and stability when compared with other traditional ZnO films.
Hydrothermal technique growth single-crystalline rutile TiO2 nanorod thin films A facile, hyd... more Hydrothermal technique growth single-crystalline rutile TiO2 nanorod thin films A facile, hydrothermal technique was developed to growth, singlecrystalline rutile TiO2 nanorod thin films on transparent conductive fluorine-doped tin oxide (FTO) substrates. In this study, the deferent periods(6, 9, 12, 15, and 18 hour) were selective with constant temperature at 160 o C to growth this films and growth in deferent temperature (130, 150,170,190, and 210 o C) with constant period of deposition at 6h. SEM image showed all the films were nanorodand the EDX measurement was given the portion of element that contribution in rutile TiO2 nanorod thin films. The diameter, length, and density of the nanorods could be varied by changingthe growth parameters. The XRD to determine the structure properties, and optical properties were measured of these rutile TiO2 nanorod thin films and obtained the absorbance and energy gap. http://dx.doi.org/10.31257/2018/JKP/100206 بيكرت مويناتيتلا ذيسكوأ يئان...
In the present study, the microwave heating method was used to prepare cadmium sulfide quantum do... more In the present study, the microwave heating method was used to prepare cadmium sulfide quantum dots CdSQDs films. CdS nanoparticles size average obtained as (7nm). The morphology, structure and composition of prepared CdSQDs were examined using (FE-SEM), (XRD) and (EDX). Optical properties of CdSQDs thin films formed and deposited onto glass substrates have been studied at room temperature using UV/ Visible spectrophotometer within the wavelength of (300-800nm), and Photoluminescence (PL) spectrum. The optical energy gap (Eg) which estimated using Tauc relation was equal (2.6eV). Prepared CdS nanoparticles thin films are free from cracks, pinholes and have high adhesion to substrate.
Ag2S nanorods and nonoparticles have been successfully prepared using chemical method. Silver nit... more Ag2S nanorods and nonoparticles have been successfully prepared using chemical method. Silver nitrate with molar concentration of 0.1 M and thiourea with different molar concentration were used as a source of Ag++and S++ions, respectively. The pH of solution was in range of 10-11. Scanning electron microscopy (SEM) image showed that the nanorods length and diameter were 2.5-3 μm and 300-400 nm, respectively. X-ray diffraction results showed a monoclinic α-Ag2S phase was obtained. The atomic ratio of silver and sulphur were found using energy dispersive spectroscopy (EDS) and it was 62.39% and 37.61%, respectively.
Ternary alloy zinc cadmium sulfide (ZnxCd1−xS) micro/nanostructures were prepared onto various su... more Ternary alloy zinc cadmium sulfide (ZnxCd1−xS) micro/nanostructures were prepared onto various substrates using a thermal evaporation method. Morphological, structural, and optical properties were found to depend on growth temperature and substrate type. ZnxCd1−xS microparticles and flower-like structures were grown onto ITO-glass and Si(100) substrates at 520 °C. Microrods and nanosheets were formed on alumina and Si(100) substrates at 900 °C, as shown in scanning electron microscopy images. X-ray diffraction patterns confirmed that all prepared samples had a high-quality wurtzite (hexagonal) structure. The prepared samples emitted two bands, namely, a sharp one located in the green region corresponding to the near band edge and a broad band in the yellow region resulting from deep-level transition. The green photoluminescence peak location of the prepared samples blue shifted compared with the optical bandgap of bulk CdS, indicating that the prepared ZnxCd1−xS possessed a greater optical bandgap than that of CdS because of the Zn ratio.
ABSTRACT Author copy ZnO nanorod arrays were grown on a flexible Kapton tape using microwave-assis... more ABSTRACT Author copy ZnO nanorod arrays were grown on a flexible Kapton tape using microwave-assisted chemical bath deposition. High crys- talline properties of the produced nanorods were proven by X-ray diffraction patterns and field emission scanning electron microscopy. Additionally, the photoluminescence spectrum showed higher UV peaks compared with visible peaks, which indicates that the ZnO nanorods had high quality and low number of defects. The metal-semiconductor-metal (MSM) configuration as used to fabricate UV and hydrogen gas detectors based on the ZnO nanorods grown on a flexible Kapton tape. Upon exposure to 395 nm UV light, the UV device exhibited fast response and decay times of 37 ms and 44 ms, respectively, at a bias oltage of 30 V. The relative sensitivities of the gas sensor made of the ZnO nanorod arrays, at hydrogen concentration of 2 %, room temperature, 150 � C and 200 � C, are 0.42, 1.4 and 1.75 respectively.
High quality, vertically aligned ZnO nanorods were grown on a silicon substrate, using microwave-... more High quality, vertically aligned ZnO nanorods were grown on a silicon substrate, using microwave-assisted chemical bath deposition with poly (vinyl alcohol)-Zn(OH)2 nanocomposites as seed layer. The structure and surface morphology of the prepared ZnO nanorod arrays were characterized using X-ray diffraction and scanning electron microscopy. The optical properties were assessed using photoluminescence measurements; the results showed a high-intensity UV peak, and a lower intensity, broader visible peak. Upon exposure to 395 nm light at a zero-bias voltage, the UV detector showed a high sensitivity of 8000% and fast response and recovery times of 25 and 22 ms, respectively.
Journal of Materials Science: Materials in Electronics, 2012
ABSTRACT Quaternary semiconductor Cu2ZnSnSe4 (CZTSe) is a very promising alternative to semicondu... more ABSTRACT Quaternary semiconductor Cu2ZnSnSe4 (CZTSe) is a very promising alternative to semiconductors based on indium (In) and gallium (Ga) as solar absorber material due to its direct band gap, inherent high absorption coefficient (>104 cm−1) and abundance of cheap elements zinc (Zn) and tin (Sn). In this study, high quality CZTSe thin films were successfully synthesized by a green and low-cost solution based non-vacuum method, which involves spin coating non-toxic solvent-based CZTSe nano-inks onto Mo coated soda lime glass substrates followed by selenization with elemental Se vapor. The effect of selenization temperature on structural, morphological, compositional and optical properties of CZTSe films are investigated using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and photoluminescence spectroscopy. XRD and Raman analysis indicates that a tetragonal stannite-type structured CZTSe is formed. Depend on the selenization temperature, the dense and compact films with grain sizes from 200 nm (500 °C) up to about 1 μm (580 °C) are obtained. EDS measurement indicates that the composition ratios of the prepared CZTSe films are copper-poor and zinc-rich nature. The CZTSe films are p-type conductivity confirmed by a hot point probe method. Photoluminescence spectrum shows slightly asymmetric narrow bands with a maximum of intensity at 0.92 eV. The dependence of the photoluminescence on the excitation temperature reveals a decrease in the intensity of the photoluminescence bands. An absorption coefficient exceeding 104 cm−1 and the band gap energy about 0.87 eV of the studied films are determined by an absorption spectroscopy.
In this research, zinc oxide nanorods were prepared by chemical bath deposition method (CBD) thro... more In this research, zinc oxide nanorods were prepared by chemical bath deposition method (CBD) through using raw materials on the glass substrate. The crystalline structure, surface morphology, elemental composition and optical properties of ZnO were studied by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectrometers (energy-dispersive X-ray spectroscopy EDXS), and UV-vis spectrophotometer, respectively. The sensing properties of the ZnO nanorod arrays were determined for different flows and temperatures. The results indicate that the ZnO nanorods have good sensitivity and stability when compared with other traditional ZnO films.
Hydrothermal technique growth single-crystalline rutile TiO2 nanorod thin films A facile, hyd... more Hydrothermal technique growth single-crystalline rutile TiO2 nanorod thin films A facile, hydrothermal technique was developed to growth, singlecrystalline rutile TiO2 nanorod thin films on transparent conductive fluorine-doped tin oxide (FTO) substrates. In this study, the deferent periods(6, 9, 12, 15, and 18 hour) were selective with constant temperature at 160 o C to growth this films and growth in deferent temperature (130, 150,170,190, and 210 o C) with constant period of deposition at 6h. SEM image showed all the films were nanorodand the EDX measurement was given the portion of element that contribution in rutile TiO2 nanorod thin films. The diameter, length, and density of the nanorods could be varied by changingthe growth parameters. The XRD to determine the structure properties, and optical properties were measured of these rutile TiO2 nanorod thin films and obtained the absorbance and energy gap. http://dx.doi.org/10.31257/2018/JKP/100206 بيكرت مويناتيتلا ذيسكوأ يئان...
In the present study, the microwave heating method was used to prepare cadmium sulfide quantum do... more In the present study, the microwave heating method was used to prepare cadmium sulfide quantum dots CdSQDs films. CdS nanoparticles size average obtained as (7nm). The morphology, structure and composition of prepared CdSQDs were examined using (FE-SEM), (XRD) and (EDX). Optical properties of CdSQDs thin films formed and deposited onto glass substrates have been studied at room temperature using UV/ Visible spectrophotometer within the wavelength of (300-800nm), and Photoluminescence (PL) spectrum. The optical energy gap (Eg) which estimated using Tauc relation was equal (2.6eV). Prepared CdS nanoparticles thin films are free from cracks, pinholes and have high adhesion to substrate.
Ag2S nanorods and nonoparticles have been successfully prepared using chemical method. Silver nit... more Ag2S nanorods and nonoparticles have been successfully prepared using chemical method. Silver nitrate with molar concentration of 0.1 M and thiourea with different molar concentration were used as a source of Ag++and S++ions, respectively. The pH of solution was in range of 10-11. Scanning electron microscopy (SEM) image showed that the nanorods length and diameter were 2.5-3 μm and 300-400 nm, respectively. X-ray diffraction results showed a monoclinic α-Ag2S phase was obtained. The atomic ratio of silver and sulphur were found using energy dispersive spectroscopy (EDS) and it was 62.39% and 37.61%, respectively.
Ternary alloy zinc cadmium sulfide (ZnxCd1−xS) micro/nanostructures were prepared onto various su... more Ternary alloy zinc cadmium sulfide (ZnxCd1−xS) micro/nanostructures were prepared onto various substrates using a thermal evaporation method. Morphological, structural, and optical properties were found to depend on growth temperature and substrate type. ZnxCd1−xS microparticles and flower-like structures were grown onto ITO-glass and Si(100) substrates at 520 °C. Microrods and nanosheets were formed on alumina and Si(100) substrates at 900 °C, as shown in scanning electron microscopy images. X-ray diffraction patterns confirmed that all prepared samples had a high-quality wurtzite (hexagonal) structure. The prepared samples emitted two bands, namely, a sharp one located in the green region corresponding to the near band edge and a broad band in the yellow region resulting from deep-level transition. The green photoluminescence peak location of the prepared samples blue shifted compared with the optical bandgap of bulk CdS, indicating that the prepared ZnxCd1−xS possessed a greater optical bandgap than that of CdS because of the Zn ratio.
ABSTRACT Author copy ZnO nanorod arrays were grown on a flexible Kapton tape using microwave-assis... more ABSTRACT Author copy ZnO nanorod arrays were grown on a flexible Kapton tape using microwave-assisted chemical bath deposition. High crys- talline properties of the produced nanorods were proven by X-ray diffraction patterns and field emission scanning electron microscopy. Additionally, the photoluminescence spectrum showed higher UV peaks compared with visible peaks, which indicates that the ZnO nanorods had high quality and low number of defects. The metal-semiconductor-metal (MSM) configuration as used to fabricate UV and hydrogen gas detectors based on the ZnO nanorods grown on a flexible Kapton tape. Upon exposure to 395 nm UV light, the UV device exhibited fast response and decay times of 37 ms and 44 ms, respectively, at a bias oltage of 30 V. The relative sensitivities of the gas sensor made of the ZnO nanorod arrays, at hydrogen concentration of 2 %, room temperature, 150 � C and 200 � C, are 0.42, 1.4 and 1.75 respectively.
High quality, vertically aligned ZnO nanorods were grown on a silicon substrate, using microwave-... more High quality, vertically aligned ZnO nanorods were grown on a silicon substrate, using microwave-assisted chemical bath deposition with poly (vinyl alcohol)-Zn(OH)2 nanocomposites as seed layer. The structure and surface morphology of the prepared ZnO nanorod arrays were characterized using X-ray diffraction and scanning electron microscopy. The optical properties were assessed using photoluminescence measurements; the results showed a high-intensity UV peak, and a lower intensity, broader visible peak. Upon exposure to 395 nm light at a zero-bias voltage, the UV detector showed a high sensitivity of 8000% and fast response and recovery times of 25 and 22 ms, respectively.
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