Journal of Nonlinear Optical Physics & Materials, Jul 28, 2023
In this paper, we present the structural and photoluminescence (PL) spectra of 2D-MoS2 and we rep... more In this paper, we present the structural and photoluminescence (PL) spectra of 2D-MoS2 and we report a theoretical investigation of the influence of Ag- and Au-doping on the transmission in 2D-MoS2 photonic crystal structure (PCS). A finite-difference time-domain (FDTD) technique and plane wave expansion method (PWE) have been introduced and adapted for periodic and aperiodic structures to extract the PC-bandgap and study the behavior of the transmission spectrum. The impact of the size of defects, the Ag- and Au-doping on the 2D-PC band structure and transmission spectrum has been visualized under the inclusion of the distribution of electromagnetic fields and the associated field maps. It has been shown that the Au-doping changes significantly the 2D-MoS2 PCS and as a result the transmission spectrum increases considerably. We can predict that 2D-MoS2 PC doped with Au is more convenient than doped with Ag in most applications involving optical transmission and waveguides for optoelectronics devices.
The band structure of direct-band-gap semiconductor (InAs) and indirect-band-gap semiconductor (G... more The band structure of direct-band-gap semiconductor (InAs) and indirect-band-gap semiconductor (Ge) is described theoretically using a 20×20 k.p model and including far-level contribution (essentially the d levels). By using this model, we obtained a quantitatively correct description of the top of the valence band and the lowest two conduction bands both in terms of energetic positions and band curvatures. In particular, the k.p Hamiltonian parameters are adjusted such that the transverse mass of the germanium conduction band is equal to the experimental value of 0.081.
A quantitative comparison of different k·p calculations of valence-band states in quantum-confine... more A quantitative comparison of different k·p calculations of valence-band states in quantum-confined semiconductor heterostructures is presented. The importance of using the appropriate Hamiltonian form is studied quantitatively following a numerical method which enables discrimination between existing Hamiltonians. The correct form of the Hamiltonian appears to be the Foreman Hamiltonian, which gives physically reasonable results contrary to the symmetrized Hamiltonian.
International Journal of Modern Physics B, Mar 30, 2015
Valence intersubband transitions of the wurtzite (WZ) strained AlGaN/GaN quantum wells are examin... more Valence intersubband transitions of the wurtzite (WZ) strained AlGaN/GaN quantum wells are examined theoretically and compared with those of the zinc-blende (ZB) ones. In particular, the effect of the interband interaction between conduction (CB) and valence (VB) bands has been taken into account explicitly. We have used the 8-bands k.p model for both WZ and ZB structures to calculate subband energies and wavefunctions of Al 0.3 Ga 0.7 N/GaN quantum wells (QWs). The results indicate that, the prominent transitions for both ZB and WZ QWs were found to be essentially related to the heavy- and light-hole subbands. For the x-polarization, we have shown that it is necessary to take into account explicitly the interband interaction between CB and VB. Finally, we can predict that WZ QWs are more convenient than ZB QWs in most applications involving intersubband transitions, especially for the z-polarized light.
We present a generalized theoretical description of the 24×24 k.p approach for determining the ba... more We present a generalized theoretical description of the 24×24 k.p approach for determining the band structure of the direct-band-gap semiconductors (GaAs, InAs) as well as the indirect-band-gap semiconductor (Ge), including far-level contribution (essentially the d levels). We extend the sp3s* basis functions by the inclusion of sV* orbitals. We find that the sp3“d”(s*)2 k.p model is fairly sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any d orbitals. Finally, the comparison with available experimental and theoretical results shows that the present model reproduces known results for bulk GaAs, InAs, and Ge, that is, their band structure, including s and p valence bands and the lowest two conduction bands.
The band structure of direct-band gap semiconductors (GaAs, InAs, InP) is described theoretically... more The band structure of direct-band gap semiconductors (GaAs, InAs, InP) is described theoretically by using a 34×34 k⋅p model. We extend the sp3d5 basis functions by the inclusion of sV∗ orbitals. We find that the sp3d5s∗ k⋅p model is sufficient to describe the electronic structure of all materials investigated over a wide energy range, obviating the use of any d valence orbitals. Finally, our results show that Luttinger parameters, the κ valence band parameter, the effective Landé factor g∗, and the effective-masses in the X and L valleys are in good agreement with available experimental data. In particular, the adjustment of the k⋅p Hamiltonian parameters proved that g∗ of GaAs, InAs, and InP are, respectively, −0.41, −15.82, and 1.35, which are in good agreement with the experimental values of −0.44, −14.90, and 1.26.
Journal of Nonlinear Optical Physics & Materials, Jul 28, 2023
In this paper, we present the structural and photoluminescence (PL) spectra of 2D-MoS2 and we rep... more In this paper, we present the structural and photoluminescence (PL) spectra of 2D-MoS2 and we report a theoretical investigation of the influence of Ag- and Au-doping on the transmission in 2D-MoS2 photonic crystal structure (PCS). A finite-difference time-domain (FDTD) technique and plane wave expansion method (PWE) have been introduced and adapted for periodic and aperiodic structures to extract the PC-bandgap and study the behavior of the transmission spectrum. The impact of the size of defects, the Ag- and Au-doping on the 2D-PC band structure and transmission spectrum has been visualized under the inclusion of the distribution of electromagnetic fields and the associated field maps. It has been shown that the Au-doping changes significantly the 2D-MoS2 PCS and as a result the transmission spectrum increases considerably. We can predict that 2D-MoS2 PC doped with Au is more convenient than doped with Ag in most applications involving optical transmission and waveguides for optoelectronics devices.
The band structure of direct-band-gap semiconductor (InAs) and indirect-band-gap semiconductor (G... more The band structure of direct-band-gap semiconductor (InAs) and indirect-band-gap semiconductor (Ge) is described theoretically using a 20×20 k.p model and including far-level contribution (essentially the d levels). By using this model, we obtained a quantitatively correct description of the top of the valence band and the lowest two conduction bands both in terms of energetic positions and band curvatures. In particular, the k.p Hamiltonian parameters are adjusted such that the transverse mass of the germanium conduction band is equal to the experimental value of 0.081.
A quantitative comparison of different k·p calculations of valence-band states in quantum-confine... more A quantitative comparison of different k·p calculations of valence-band states in quantum-confined semiconductor heterostructures is presented. The importance of using the appropriate Hamiltonian form is studied quantitatively following a numerical method which enables discrimination between existing Hamiltonians. The correct form of the Hamiltonian appears to be the Foreman Hamiltonian, which gives physically reasonable results contrary to the symmetrized Hamiltonian.
International Journal of Modern Physics B, Mar 30, 2015
Valence intersubband transitions of the wurtzite (WZ) strained AlGaN/GaN quantum wells are examin... more Valence intersubband transitions of the wurtzite (WZ) strained AlGaN/GaN quantum wells are examined theoretically and compared with those of the zinc-blende (ZB) ones. In particular, the effect of the interband interaction between conduction (CB) and valence (VB) bands has been taken into account explicitly. We have used the 8-bands k.p model for both WZ and ZB structures to calculate subband energies and wavefunctions of Al 0.3 Ga 0.7 N/GaN quantum wells (QWs). The results indicate that, the prominent transitions for both ZB and WZ QWs were found to be essentially related to the heavy- and light-hole subbands. For the x-polarization, we have shown that it is necessary to take into account explicitly the interband interaction between CB and VB. Finally, we can predict that WZ QWs are more convenient than ZB QWs in most applications involving intersubband transitions, especially for the z-polarized light.
We present a generalized theoretical description of the 24×24 k.p approach for determining the ba... more We present a generalized theoretical description of the 24×24 k.p approach for determining the band structure of the direct-band-gap semiconductors (GaAs, InAs) as well as the indirect-band-gap semiconductor (Ge), including far-level contribution (essentially the d levels). We extend the sp3s* basis functions by the inclusion of sV* orbitals. We find that the sp3“d”(s*)2 k.p model is fairly sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any d orbitals. Finally, the comparison with available experimental and theoretical results shows that the present model reproduces known results for bulk GaAs, InAs, and Ge, that is, their band structure, including s and p valence bands and the lowest two conduction bands.
The band structure of direct-band gap semiconductors (GaAs, InAs, InP) is described theoretically... more The band structure of direct-band gap semiconductors (GaAs, InAs, InP) is described theoretically by using a 34×34 k⋅p model. We extend the sp3d5 basis functions by the inclusion of sV∗ orbitals. We find that the sp3d5s∗ k⋅p model is sufficient to describe the electronic structure of all materials investigated over a wide energy range, obviating the use of any d valence orbitals. Finally, our results show that Luttinger parameters, the κ valence band parameter, the effective Landé factor g∗, and the effective-masses in the X and L valleys are in good agreement with available experimental data. In particular, the adjustment of the k⋅p Hamiltonian parameters proved that g∗ of GaAs, InAs, and InP are, respectively, −0.41, −15.82, and 1.35, which are in good agreement with the experimental values of −0.44, −14.90, and 1.26.
Uploads
Papers by Said Ridene