Ce memoire est consacre a l'etude des diodes de puissance a haute temperature afin de degager... more Ce memoire est consacre a l'etude des diodes de puissance a haute temperature afin de degager les limitations reelles de l'augmentation de la temperature maximale de jonction dans ces dispositifs. Des analyses theoriques et experimentales et des interpretations du comportement des diodes en silicium a haute temperature sont effectuees. Une methode originale pour determiner la duree de vie des porteurs libres dans la zone centrale des diodes de type PIN est proposee. Finalement, une comparaison entre deux diodes assez semblables en silicium et en carbure de silicium, ainsi qu'une estimation des potentialites theoriques des diodes en SiC sont presentees.
2008 26th International Conference on Microelectronics, 2008
ABSTRACT A quantum mechanical simulation of dissipative transport in nano n -n-n quantum wires an... more ABSTRACT A quantum mechanical simulation of dissipative transport in nano n -n-n quantum wires and nano structures with two-dimensional infinite cross section is presented. The simulation is carried out within the non-equilibrium Green's function method (NEGF). Scattering is taken into account using a simple phenomenological model.
... Related content: In this: publication; By this: publisher; In this Subject: Electrical & ... more ... Related content: In this: publication; By this: publisher; In this Subject: Electrical & Nuclear Engineering; By this author: Gamal SH ; Al-Marzouki FM. You are signed in as: Google (Institutional account). Group of crawlers (Institutional account ...
... SALAH H. GAMAL, H. MOREL, AND JP CHANTE ... where f( 7 ) is the difference between the left-h... more ... SALAH H. GAMAL, H. MOREL, AND JP CHANTE ... where f( 7 ) is the difference between the left-hand side and the right-hand side of (I). The series summation S given by (4) con-verges rapidly for all possible values of the normalized base width W. Hence, calculation off(7) is not ...
2012 28th International Conference on Microelectronics Proceedings, 2012
In this paper, we propose a 2D numerical quantum simulator for silicon gate-all-around (GAA) nano... more In this paper, we propose a 2D numerical quantum simulator for silicon gate-all-around (GAA) nanowire transistors with cylindrical cross-section within the effective mass approximation. The Hamiltonian is expanded in the uncoupled mode space and the nonequilibrium Green's function (NEGF) formalism is adopted to calculate the electron density and current. An approximated isotropic effective mass is used in conjunction with optimizing
Ce memoire est consacre a l'etude des diodes de puissance a haute temperature afin de degager... more Ce memoire est consacre a l'etude des diodes de puissance a haute temperature afin de degager les limitations reelles de l'augmentation de la temperature maximale de jonction dans ces dispositifs. Des analyses theoriques et experimentales et des interpretations du comportement des diodes en silicium a haute temperature sont effectuees. Une methode originale pour determiner la duree de vie des porteurs libres dans la zone centrale des diodes de type PIN est proposee. Finalement, une comparaison entre deux diodes assez semblables en silicium et en carbure de silicium, ainsi qu'une estimation des potentialites theoriques des diodes en SiC sont presentees.
2008 26th International Conference on Microelectronics, 2008
ABSTRACT A quantum mechanical simulation of dissipative transport in nano n -n-n quantum wires an... more ABSTRACT A quantum mechanical simulation of dissipative transport in nano n -n-n quantum wires and nano structures with two-dimensional infinite cross section is presented. The simulation is carried out within the non-equilibrium Green's function method (NEGF). Scattering is taken into account using a simple phenomenological model.
... Related content: In this: publication; By this: publisher; In this Subject: Electrical & ... more ... Related content: In this: publication; By this: publisher; In this Subject: Electrical & Nuclear Engineering; By this author: Gamal SH ; Al-Marzouki FM. You are signed in as: Google (Institutional account). Group of crawlers (Institutional account ...
... SALAH H. GAMAL, H. MOREL, AND JP CHANTE ... where f( 7 ) is the difference between the left-h... more ... SALAH H. GAMAL, H. MOREL, AND JP CHANTE ... where f( 7 ) is the difference between the left-hand side and the right-hand side of (I). The series summation S given by (4) con-verges rapidly for all possible values of the normalized base width W. Hence, calculation off(7) is not ...
2012 28th International Conference on Microelectronics Proceedings, 2012
In this paper, we propose a 2D numerical quantum simulator for silicon gate-all-around (GAA) nano... more In this paper, we propose a 2D numerical quantum simulator for silicon gate-all-around (GAA) nanowire transistors with cylindrical cross-section within the effective mass approximation. The Hamiltonian is expanded in the uncoupled mode space and the nonequilibrium Green's function (NEGF) formalism is adopted to calculate the electron density and current. An approximated isotropic effective mass is used in conjunction with optimizing
Uploads
Papers by Salah Gamal