2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006
Cu2ZnSnSe4 monograin powders with different Zn/Sn concentration ratios were synthesized from bina... more Cu2ZnSnSe4 monograin powders with different Zn/Sn concentration ratios were synthesized from binaries and elemental selenium, p-type CCu2ZnSnSe4 monograins of stannite structure had tetragonal shape with rounded edges. PL spectra showed one symmetrical band with peak position at 0.81 eV. Monograin layer solar cell structures graphite/Cu2ZnSnSe4/CdS/ZnO had open circuit voltage over 400 mV, short circuit current 15.5 mA/cm2 and FF41 %
ABSTRACT CuInS2 films were prepared by the spray pyrolysis method using either copper-rich soluti... more ABSTRACT CuInS2 films were prepared by the spray pyrolysis method using either copper-rich solutions or the recrystallization of low-crystallinity film in the presence of an intentionally deposited CuxS layer. KCN-etched films were characterized by XRD, SEM and EDX. The Cu/In molar ratio of 1.5–4.0 in the solution resulted in well-crystallized CuInS2 films with the mean crystallite size of 120 nm. SEM study showed nonuniform surface with irregularly placed large grain domains in the flat film. The two-step process resulted in a uniform film with the crystallite size of 50 nm. Films exhibited an In-rich composition. Solar cells based on a recrystallized absorber showed an improved quantum efficiency spectrum.
2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006
Cu2ZnSnSe4 monograin powders with different Zn/Sn concentration ratios were synthesized from bina... more Cu2ZnSnSe4 monograin powders with different Zn/Sn concentration ratios were synthesized from binaries and elemental selenium, p-type CCu2ZnSnSe4 monograins of stannite structure had tetragonal shape with rounded edges. PL spectra showed one symmetrical band with peak position at 0.81 eV. Monograin layer solar cell structures graphite/Cu2ZnSnSe4/CdS/ZnO had open circuit voltage over 400 mV, short circuit current 15.5 mA/cm2 and FF41 %
ABSTRACT CuInS2 films were prepared by the spray pyrolysis method using either copper-rich soluti... more ABSTRACT CuInS2 films were prepared by the spray pyrolysis method using either copper-rich solutions or the recrystallization of low-crystallinity film in the presence of an intentionally deposited CuxS layer. KCN-etched films were characterized by XRD, SEM and EDX. The Cu/In molar ratio of 1.5–4.0 in the solution resulted in well-crystallized CuInS2 films with the mean crystallite size of 120 nm. SEM study showed nonuniform surface with irregularly placed large grain domains in the flat film. The two-step process resulted in a uniform film with the crystallite size of 50 nm. Films exhibited an In-rich composition. Solar cells based on a recrystallized absorber showed an improved quantum efficiency spectrum.
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