In this work a broad-band class E power amplifier (PA) is designed, manufactured and measured. 40... more In this work a broad-band class E power amplifier (PA) is designed, manufactured and measured. 400 MHz bandwidth with a center frequency of 800 MHz was realized using a GaN HEMT device. A novel and easy circuit topology is proposed for broad-band bandpass filter with integrated output matching network. Different filter types are discussed, suitable topology is chosen and design equations are shown. A maximum drain efficiency of 87.8 % (PAE = 80.6 %) is observed. Maximum output power of 49 W is measured with 16.3 dB power gain at the 1 dB compression point.
Abstract This paper presents a 50 W current mode class D (CMCD) power amplifier (PA) operating a... more Abstract This paper presents a 50 W current mode class D (CMCD) power amplifier (PA) operating at 2.14 GHz. The PA is implemented using GaN pHEMT. The peak drain efficiency (η) is 62.7 % and power added efficiency (PAE) is 60.3 %. A resonator without an inductor was ...
Abstract In this paper, a 1 MHz to 3.4 GHz, 5 W, highly linear power amplifier based on GaN HEMT... more Abstract In this paper, a 1 MHz to 3.4 GHz, 5 W, highly linear power amplifier based on GaN HEMT is reported. Load-pull technique has been applied to introduce a compromising solution for the PA performance trade-off problem. Over the whole bandwidth a measured small ...
In this work a broad-band class E power amplifier (PA) is designed, manufactured and measured. 40... more In this work a broad-band class E power amplifier (PA) is designed, manufactured and measured. 400 MHz bandwidth with a center frequency of 800 MHz was realized using a GaN HEMT device. A novel and easy circuit topology is proposed for broad-band bandpass filter with integrated output matching network. Different filter types are discussed, suitable topology is chosen and design equations are shown. A maximum drain efficiency of 87.8 % (PAE = 80.6 %) is observed. Maximum output power of 49 W is measured with 16.3 dB power gain at the 1 dB compression point.
Abstract This paper presents a 50 W current mode class D (CMCD) power amplifier (PA) operating a... more Abstract This paper presents a 50 W current mode class D (CMCD) power amplifier (PA) operating at 2.14 GHz. The PA is implemented using GaN pHEMT. The peak drain efficiency (η) is 62.7 % and power added efficiency (PAE) is 60.3 %. A resonator without an inductor was ...
Abstract In this paper, a 1 MHz to 3.4 GHz, 5 W, highly linear power amplifier based on GaN HEMT... more Abstract In this paper, a 1 MHz to 3.4 GHz, 5 W, highly linear power amplifier based on GaN HEMT is reported. Load-pull technique has been applied to introduce a compromising solution for the PA performance trade-off problem. Over the whole bandwidth a measured small ...
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