Page 1. 124 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 3, MARCH 2001 1800 V NPN Bipolar Junction ... more Page 1. 124 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 3, MARCH 2001 1800 V NPN Bipolar Junction Transistors in 4HSiC Sei-Hyung Ryu, Member, IEEE, Anant K. Agarwal, Member, IEEE, Ranbir Singh, and John W. Palmour, Member, IEEE ...
An overview of the status of SiC technology for power devices is discussed. 4H-SiC is the most de... more An overview of the status of SiC technology for power devices is discussed. 4H-SiC is the most desirable SiC polytype for power devices because of its superior electron transport properties. Micropipe defect densities in 4H-SiC have been dramatically reduced, with 0.8 cm-2 being demonstrated on a 35 mm wafer. Interface trap densities of 1×1011 cm-2 eV-1 at the oxide/SiC interface have been achieved, resulting in a high SiC NMOSFET channel mobility of 72 cm2/V-sec. Device lifetimes for SiC n-channel MOSFETs have are projected to be 5 years at 350°C, and time dependent dielectric breakdown of oxides on p-type SiC have lifetimes >700 years at 2 MV/cm and 350°C. Sheet resistivities of <10 kΩ/sq. and p-type contact resistivities less than 10-5 Ω-cm2 have been obtained using high temperature Al+ ion implantation, and the first SiC CMOS circuits have been demonstrated using this technology. Power MOSFETs in 4H-SiC have been demonstrated to have specific on-resistances lower than equivalent Si devices, and blocking voltages as high as 800 V have been achieved. The highest power devices to date are 4.2 kW, 700 V 4H-SiC npnp thyristors, and their speed is very high, with a trr=105 nsecs and maximum operating frequency of 250 kHz
High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to 5.... more High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to 5.5 kV, good on-state and fast switching characteristics. This is the highest blocking voltage 4H-SiC device reported to date.
... R. Singh is with Cree, Inc., Durham, NC 27703, USA. ... Page 3. HEFNER et al.: SiC POWER DIOD... more ... R. Singh is with Cree, Inc., Durham, NC 27703, USA. ... Page 3. HEFNER et al.: SiC POWER DIODES PROVIDE BREAKTHROUGH PERFORMANCE 275 Fig. 7. SiC MPS diode reverse recovery characteristics with and without an added drive capacitance. Fig. ...
This paper reports the detailed design, fabrication and characterization of 1500 V, 4 Amp 4H-SiC ... more This paper reports the detailed design, fabrication and characterization of 1500 V, 4 Amp 4H-SiC JBS diodes. 2D device simulations show that a grid spacing of 4 μm results in the most optimum trade-off between the on-state and off-state characteristics. JBS diodes with linear and honeycombed p+ grids, Schottky diodes and implanted PiN diodes fabricated alongside show that while 4H-SiC JBS diodes behave similar to Schottky diodes in the on-state and switching characteristics, they show reverse characteristics similar to PiN diodes. Measurements on 4H-SiC JBS diodes indicate that the reverse recovery time (τn) and associated losses are near zero even at a rev. dI/dt of 75 A/μsec. Based on measured waveforms, detailed loss models on diode switching were established for a high frequency switching power supply efficiency evaluation. A DC/DC converter efficiency improvements of 3-6% were obtained over the fastest, lower blocking voltage silicon diode when operated in the 100-200 kHz range
Page 1. 124 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 3, MARCH 2001 1800 V NPN Bipolar Junction ... more Page 1. 124 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 3, MARCH 2001 1800 V NPN Bipolar Junction Transistors in 4HSiC Sei-Hyung Ryu, Member, IEEE, Anant K. Agarwal, Member, IEEE, Ranbir Singh, and John W. Palmour, Member, IEEE ...
An overview of the status of SiC technology for power devices is discussed. 4H-SiC is the most de... more An overview of the status of SiC technology for power devices is discussed. 4H-SiC is the most desirable SiC polytype for power devices because of its superior electron transport properties. Micropipe defect densities in 4H-SiC have been dramatically reduced, with 0.8 cm-2 being demonstrated on a 35 mm wafer. Interface trap densities of 1×1011 cm-2 eV-1 at the oxide/SiC interface have been achieved, resulting in a high SiC NMOSFET channel mobility of 72 cm2/V-sec. Device lifetimes for SiC n-channel MOSFETs have are projected to be 5 years at 350°C, and time dependent dielectric breakdown of oxides on p-type SiC have lifetimes >700 years at 2 MV/cm and 350°C. Sheet resistivities of <10 kΩ/sq. and p-type contact resistivities less than 10-5 Ω-cm2 have been obtained using high temperature Al+ ion implantation, and the first SiC CMOS circuits have been demonstrated using this technology. Power MOSFETs in 4H-SiC have been demonstrated to have specific on-resistances lower than equivalent Si devices, and blocking voltages as high as 800 V have been achieved. The highest power devices to date are 4.2 kW, 700 V 4H-SiC npnp thyristors, and their speed is very high, with a trr=105 nsecs and maximum operating frequency of 250 kHz
High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to 5.... more High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to 5.5 kV, good on-state and fast switching characteristics. This is the highest blocking voltage 4H-SiC device reported to date.
... R. Singh is with Cree, Inc., Durham, NC 27703, USA. ... Page 3. HEFNER et al.: SiC POWER DIOD... more ... R. Singh is with Cree, Inc., Durham, NC 27703, USA. ... Page 3. HEFNER et al.: SiC POWER DIODES PROVIDE BREAKTHROUGH PERFORMANCE 275 Fig. 7. SiC MPS diode reverse recovery characteristics with and without an added drive capacitance. Fig. ...
This paper reports the detailed design, fabrication and characterization of 1500 V, 4 Amp 4H-SiC ... more This paper reports the detailed design, fabrication and characterization of 1500 V, 4 Amp 4H-SiC JBS diodes. 2D device simulations show that a grid spacing of 4 μm results in the most optimum trade-off between the on-state and off-state characteristics. JBS diodes with linear and honeycombed p+ grids, Schottky diodes and implanted PiN diodes fabricated alongside show that while 4H-SiC JBS diodes behave similar to Schottky diodes in the on-state and switching characteristics, they show reverse characteristics similar to PiN diodes. Measurements on 4H-SiC JBS diodes indicate that the reverse recovery time (τn) and associated losses are near zero even at a rev. dI/dt of 75 A/μsec. Based on measured waveforms, detailed loss models on diode switching were established for a high frequency switching power supply efficiency evaluation. A DC/DC converter efficiency improvements of 3-6% were obtained over the fastest, lower blocking voltage silicon diode when operated in the 100-200 kHz range
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