Prof. Dr. Uday M. Nayef received the B.Sc. degree in physics and M.Sc. degree in solid state physics from Al-Mustansiriyah University, Iraq in 1998 and 2001 respectively, and Ph.D. degrees laser and optoelectronics (nanomaterials physics) from University of Technology, Iraq in 2010, he worked in applied science department University of Technology since 2002 and up to. He has published over 50 research articles within international journals.
This work focuses on photodetector Au:MgO nano-particles (NPs) have been prepared by laser ablati... more This work focuses on photodetector Au:MgO nano-particles (NPs) have been prepared by laser ablation at various laser energies then deposited on porous-Si (PS). PS are produced with the use of the photo-electrochemical etching (PECE) approach for n-type crystalline Si (c-Si) wafers of (100) orientation. XRD, scanning electron Microscope (SEM), UV-visible Spector-photometer and electrical characteristics that have been utilized for characterizations of products. The photo-detector measurements, the spectral responsivity curves inclusive three regions; the first peak was due to absorption of the ultraviolet light by Au:MgO NPs. The second peak corresponding to the absorption of the visible light with porous silicon layer and the third peak to absorption edge of the Si substrate. The higher responsivity of Au:MgO NPs/PS photo-detector were found to be 3.29 A/W for specimen prepared at laser energy 800 mJ/pulse.
In this paper, porous silicon was prepared by using electrochemical etching technique of p-type s... more In this paper, porous silicon was prepared by using electrochemical etching technique of p-type silicon acceptor, with a resistivity of 1.5-4Ohm.cm, using hydrochloric acid with concentration of 24%. The etching current density effect 4, 12, 20mA/cm2 was carried out at constant etching time of 15min. The structural characteristics of the porous silicon and the doped porous silicon were studied and found an expansion in the spectrum of the X-rays and a simple shift in the diffraction angles while maintaining the surface direction (111). The morphological properties were studied using the atomic force microscope which showed pores formation and gives the pore diameter within the range of 19.08 to 44.73nm for the prepared samples. It was also noted that the rate of pore diameter and the thickness of the porous silicon layer increased with increasing etching current density. Electrical characteristics of the nanoscale porous silicon layer and the doped porous silicon with silver and cop...
This work focuses on photodetector Au:MgO nano-particles (NPs) have been prepared by laser ablati... more This work focuses on photodetector Au:MgO nano-particles (NPs) have been prepared by laser ablation at various laser energies then deposited on porous-Si (PS). PS are produced with the use of the photo-electrochemical etching (PECE) approach for n-type crystalline Si (c-Si) wafers of (100) orientation. XRD, scanning electron Microscope (SEM), UV-visible Spector-photometer and electrical characteristics that have been utilized for characterizations of products. The photo-detector measurements, the spectral responsivity curves inclusive three regions; the first peak was due to absorption of the ultraviolet light by Au:MgO NPs. The second peak corresponding to the absorption of the visible light with porous silicon layer and the third peak to absorption edge of the Si substrate. The higher responsivity of Au:MgO NPs/PS photo-detector were found to be 3.29 A/W for specimen prepared at laser energy 800 mJ/pulse.
In this paper, porous silicon was prepared by using electrochemical etching technique of p-type s... more In this paper, porous silicon was prepared by using electrochemical etching technique of p-type silicon acceptor, with a resistivity of 1.5-4Ohm.cm, using hydrochloric acid with concentration of 24%. The etching current density effect 4, 12, 20mA/cm2 was carried out at constant etching time of 15min. The structural characteristics of the porous silicon and the doped porous silicon were studied and found an expansion in the spectrum of the X-rays and a simple shift in the diffraction angles while maintaining the surface direction (111). The morphological properties were studied using the atomic force microscope which showed pores formation and gives the pore diameter within the range of 19.08 to 44.73nm for the prepared samples. It was also noted that the rate of pore diameter and the thickness of the porous silicon layer increased with increasing etching current density. Electrical characteristics of the nanoscale porous silicon layer and the doped porous silicon with silver and cop...
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