Moore’s clock is still the major driver of our industry. But the growing technical requirements m... more Moore’s clock is still the major driver of our industry. But the growing technical requirements make manufacturing facilities increasingly expensive. This has caused a rising number of manufacturing joint ventures. But as R&D budgets are increasing faster than chip makers’ revenues, and since we don’t want to slow down Moore’s clock, R&D is consolidating in major initiatives and institutes. As the industry is confronting the challenges of the coming 450mm wafer generation and of replacing the CMOS transistor by a “new switch”, some questions seem legitimate: can we afford to slow down the clock? or will the consolidation continue? And if so, will this result in the ultimate global “public-private partnership”, necessary to preserve the productivity gains that invigorate other sectors of the economy? What is the role of the equipment and material suppliers?
Spie Proceedings Proceedings of the Society of Photo Optical Instrumentation Engineers Held in Cannes France November 26 27 1985 Bellingham Wa Spie 1986 Edited By Declerck Gilbert J, 1986
Advances in Electronics and Electron Physics Volume 47, 1978
Publisher Summary This chapter describes the physical properties of the interface between silicon... more Publisher Summary This chapter describes the physical properties of the interface between silicon and silicon dioxide in metal-isolator semiconductor transistors and of their influence on the channel current of a MOS transistor, particularly in weak inversion. The channel current consequently, is several orders of magnitude smaller than in the normal operating region and is easily influenced by the nonuniformities in the vicinity of the interface. In order to be able to derive the properties of the interface from the measured weak-inversion current, one has to calculate the theoretical current flowing through the corresponding ideal transistor. To that end, it is necessary to characterize the experimental transistor as accurately as possible. This is done by means of three-terminal capacitance measurements that yield the channel length and the capacitances between different parts of the MOS transistor. The chapter discusses the accurate model for the drain current in a MOSFET, determination of the surface state density from the drain current versus drain voltage measurements in weak inversion, and influence of potential fluctuations on the mobility in weak inversion.
Large Scale Integrated Circuits Technology: State of the Art and Prospects, 1982
As the dimensions of the devices used in VLSI-circuits shrink, the precise control of junction de... more As the dimensions of the devices used in VLSI-circuits shrink, the precise control of junction depths and of lateral diffusion, of implanted field regions and of threshold or barrier implants is of utmost importance. In many of those cases the classical diffusion theory can no longer be applied because of the close interaction between the various diffusing dopants and also because of the pronounced influence of the annealing or oxidation ambient on the diffusion data.
Abstract A simple technique for measuring the lifetime of minority carriers as they are injected ... more Abstract A simple technique for measuring the lifetime of minority carriers as they are injected through an asymmetrical junction is derived. This technique is based on the measurement of the impedance of the diode and can be done whenever the diode current is dominated by the diffusion of minority carriers in the lightly doped region. The method can be applied to any asymmetrical diode, whether the base is large or small, whether the space charge capacitance is high or small and whether the base resistance is high or small.
Summary form only given. The operation of NMOS transistors made in laser-recrystallized SOI mater... more Summary form only given. The operation of NMOS transistors made in laser-recrystallized SOI material has been investigated at both 77 K and 4 K. The back-gate voltage (and its history) turns out to have an important influence on the characteristics. It is found that by applying adequate pulses at the back gates, a variety of stable operating states, which are
Complementary Metallic Oxide Semiconductor (CMOS) technology is used to build analog circuitry fo... more Complementary Metallic Oxide Semiconductor (CMOS) technology is used to build analog circuitry for operation at liquid helium temperatures. At this low temperature, the silicon Metal Oxide Semiconductor Field Effect Transistors (MOSFET) features anomalous behavior is known as kink and hysteresis behavior. A few of the technological and design measures that can be used to relieve the above mentioned problems are
An analysis of the photodiode working in the integrating mode was presented by Chamberlain (1969)... more An analysis of the photodiode working in the integrating mode was presented by Chamberlain (1969). His starting formulas are erroneous. A correct expression for the voltage across an illuminated diode is given here. This formula is in agreement with the one obtained by Weckler (1967) for linearly graded junctions.
Moore’s clock is still the major driver of our industry. But the growing technical requirements m... more Moore’s clock is still the major driver of our industry. But the growing technical requirements make manufacturing facilities increasingly expensive. This has caused a rising number of manufacturing joint ventures. But as R&D budgets are increasing faster than chip makers’ revenues, and since we don’t want to slow down Moore’s clock, R&D is consolidating in major initiatives and institutes. As the industry is confronting the challenges of the coming 450mm wafer generation and of replacing the CMOS transistor by a “new switch”, some questions seem legitimate: can we afford to slow down the clock? or will the consolidation continue? And if so, will this result in the ultimate global “public-private partnership”, necessary to preserve the productivity gains that invigorate other sectors of the economy? What is the role of the equipment and material suppliers?
Spie Proceedings Proceedings of the Society of Photo Optical Instrumentation Engineers Held in Cannes France November 26 27 1985 Bellingham Wa Spie 1986 Edited By Declerck Gilbert J, 1986
Advances in Electronics and Electron Physics Volume 47, 1978
Publisher Summary This chapter describes the physical properties of the interface between silicon... more Publisher Summary This chapter describes the physical properties of the interface between silicon and silicon dioxide in metal-isolator semiconductor transistors and of their influence on the channel current of a MOS transistor, particularly in weak inversion. The channel current consequently, is several orders of magnitude smaller than in the normal operating region and is easily influenced by the nonuniformities in the vicinity of the interface. In order to be able to derive the properties of the interface from the measured weak-inversion current, one has to calculate the theoretical current flowing through the corresponding ideal transistor. To that end, it is necessary to characterize the experimental transistor as accurately as possible. This is done by means of three-terminal capacitance measurements that yield the channel length and the capacitances between different parts of the MOS transistor. The chapter discusses the accurate model for the drain current in a MOSFET, determination of the surface state density from the drain current versus drain voltage measurements in weak inversion, and influence of potential fluctuations on the mobility in weak inversion.
Large Scale Integrated Circuits Technology: State of the Art and Prospects, 1982
As the dimensions of the devices used in VLSI-circuits shrink, the precise control of junction de... more As the dimensions of the devices used in VLSI-circuits shrink, the precise control of junction depths and of lateral diffusion, of implanted field regions and of threshold or barrier implants is of utmost importance. In many of those cases the classical diffusion theory can no longer be applied because of the close interaction between the various diffusing dopants and also because of the pronounced influence of the annealing or oxidation ambient on the diffusion data.
Abstract A simple technique for measuring the lifetime of minority carriers as they are injected ... more Abstract A simple technique for measuring the lifetime of minority carriers as they are injected through an asymmetrical junction is derived. This technique is based on the measurement of the impedance of the diode and can be done whenever the diode current is dominated by the diffusion of minority carriers in the lightly doped region. The method can be applied to any asymmetrical diode, whether the base is large or small, whether the space charge capacitance is high or small and whether the base resistance is high or small.
Summary form only given. The operation of NMOS transistors made in laser-recrystallized SOI mater... more Summary form only given. The operation of NMOS transistors made in laser-recrystallized SOI material has been investigated at both 77 K and 4 K. The back-gate voltage (and its history) turns out to have an important influence on the characteristics. It is found that by applying adequate pulses at the back gates, a variety of stable operating states, which are
Complementary Metallic Oxide Semiconductor (CMOS) technology is used to build analog circuitry fo... more Complementary Metallic Oxide Semiconductor (CMOS) technology is used to build analog circuitry for operation at liquid helium temperatures. At this low temperature, the silicon Metal Oxide Semiconductor Field Effect Transistors (MOSFET) features anomalous behavior is known as kink and hysteresis behavior. A few of the technological and design measures that can be used to relieve the above mentioned problems are
An analysis of the photodiode working in the integrating mode was presented by Chamberlain (1969)... more An analysis of the photodiode working in the integrating mode was presented by Chamberlain (1969). His starting formulas are erroneous. A correct expression for the voltage across an illuminated diode is given here. This formula is in agreement with the one obtained by Weckler (1967) for linearly graded junctions.
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