Abstract
Static random access memory (SRAM) is one of the key components in the growing embedded systems with a demand in its increased capacity. It is necessary to do power analysis at the early stages of the design process for such large sized SRAMs to avoid further complexities that degrade system performance to worst. SRAMs are greatly delved from 6T to 10T with its size against to the read and write stability issues. However, use of 10T alone in the large sized memories is not feasible for the low-power system architectures. In this paper, a unique style of dual-port hybrid SRAM memory architectures is proposed using different combinations of 6T and 7T. The hybrid model using 6T-7T SRAM cell is performing well over traditional 6T-6T and 7T-7T architectures with power reduction improvement of 27.2% and 30.5%, respectively, and with area reduction improvement of 26.1% and 8.15%, respectively.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
Kankanala B, Srinivasulu A, Musala S (2013) 7-T single end and 8-T differential dual-port SRAM memory cells. In: Proceedings of 2013 IEEE conference on information and communication technologies (ICT 2013). IEEE, pp 1243–1246. 978-1-4673-5758-6/13
Sil A, Bakkamanthala S, Karlapudi S, Bayoumi M (2012) Highly stable, dual-port, sub-threshold 7T SRAM cell for ultra-low power application. In: IEEE 10th international new circuits and systems conference (NEWCAS), Montreal, QC, Canada. IEEE, pp 493–496. 978-1-4673-0859-5/12/$31.00©2012
Gavaskar K, Ragupathy US, Malini V (2019) Design of novel SRAM cell using hybrid VLSI techniques for low leakage and high speed in embedded memories. Wirel Pers Commun 1–29. Springer.https://doi.org/10.1007/s11277-019-06523-7
Pasandi G, Pedram M (2018) Internal write-back and read-before-write schemes to eliminate the disturbance to the half-selected cells in SRAM. IET Circuits Devices Syst 12(4):460–466
Nii K et al (2009) Synchronous ultra-high-density 2RW dual-port 8T-SRAM with circumvention of simultaneous common-row-access. IEEE J Solid-State Circuits 44(3):977–986. Digital Object Identifier, Mar 2009. https://doi.org/10.1109/JSSC.2009.2013766
Ataei S, Gaalswyk M, Stine JE (2017) A high performance multi-port SRAM for low voltage shared memory systems in 32 nm CMOS. IEEE, pp 1236–1239. 978-1-5090-6389-5/17
Yu WS, Huang R, Xu SQ, Wang S, Kan E, Suh GE (2011) SRAM-DRAM hybrid memory with applications to efficient register files in fine-grained multi-threading. In: 2011 38th annual international symposium on computer architecture (ISCA), pp 247–258
Liang X, Turgay K, Brooks D (2007) Architectural power models for SRAM and CAM structures based on hybrid analytical/empirical techniques. IEEE, pp 824–830. 1-4244-1382-6/07
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2023 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Parvathi, M., Chinnaaiah, M.C. (2023). Implementation and Performance Evaluation of Hybrid SRAM Architectures Using 6T and 7T for Low-Power Applications. In: Bhateja, V., Mohanty, J.R., Flores Fuentes, W., Maharatna, K. (eds) Communication, Software and Networks. Lecture Notes in Networks and Systems, vol 493. Springer, Singapore. https://doi.org/10.1007/978-981-19-4990-6_22
Download citation
DOI: https://doi.org/10.1007/978-981-19-4990-6_22
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-19-4989-0
Online ISBN: 978-981-19-4990-6
eBook Packages: EngineeringEngineering (R0)