Conclusion
The niobium oxide based nonlinear devices were fabricated and analyzed. The electrical tests present good control over device-to-device variation and stable endurance more than 106. The conduction mechanism was comprehensively discussed. The low-voltage region relates to SCLC, while Schottky and F-N tunneling are responsible for negative and positive high-voltage region respectively. Consequently, the volatile switching may originate from the capture and release of electrons by traps in SCLC mechanism, and this relaxation phenomenon is evaluated quantitatively.
References
Hudec B, Hsu C W, Wang I T, et al. 3D resistive RAM cell design for high-density storage class memory — a review. Sci China Inf Sci, 2016, 59: 061403
Zhao X L, Wang R, Xiao X H, et al. Flexible cation-based threshold selector for resistive switching memory integration. Sci China Inf Sci, 2018, 61: 060413
Cui X L, Zhang Q, Cui X X, et al. Testing of 1TnR RRAM array with sneak path technique. Sci China Inf Sci, 2017, 60: 029402
Park J, Cha E, Karpov I, et al. Dynamics of electro-forming and electrically driven insulator-metal transition in NbOx selector. Appl Phys Lett, 2016, 108: 232101
Kim K M, Zhang J, Graves C, et al. Low-power, self-rectifying, and forming-free memristor with an asymmetric programing voltage for a high-density crossbar application. Nano Lett, 2016, 16: 6724–6732
Park J H, Jeon D S, Kim T G. Ti-doped GaOx resistive switching memory with self-rectifying behavior by using NbOx/Pt bilayers. ACS Appl Mater Interface, 2017, 9: 43336–43342
Krause H. Tunnel hopping current and trap filling in insulating layers. Phys Stat Sol, 1979, 52: 565–575
Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant Nos. 61834001, 61574007, 61421005) and 111 Project (Grant No. B18001).
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Fang, Y., Wang, Z., Cheng, C. et al. Investigation of NbOx-based volatile switching device with self-rectifying characteristics. Sci. China Inf. Sci. 62, 229401 (2019). https://doi.org/10.1007/s11432-019-9894-0
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DOI: https://doi.org/10.1007/s11432-019-9894-0