Lasing in direct-bandgap GeSn alloy grown on Si S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ... Nature photonics 9 (2), 88-92, 2015 | 1343 | 2015 |
Intersubband electroluminescence from silicon-based quantum cascade structures G Dehlinger, L Diehl, U Gennser, H Sigg, J Faist, K Ensslin, ... Science 290 (5500), 2277-2280, 2000 | 380 | 2000 |
Three-dimensional Si/Ge quantum dot crystals D Grützmacher, T Fromherz, C Dais, J Stangl, E Müller, Y Ekinci, ... Nano letters 7 (10), 3150-3156, 2007 | 232 | 2007 |
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys A Elbaz, D Buca, N von den Driesch, K Pantzas, G Patriarche, ... Nature Photonics 14 (6), 375-382, 2020 | 211 | 2020 |
Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ... Applied physics letters 102 (19), 2013 | 194 | 2013 |
Anomalous coiling of sige/si and sige/si/cr helical nanobelts L Zhang, E Ruh, D Grützmacher, Dong, DJ Bell, BJ Nelson, ... Nano letters 6 (7), 1311-1317, 2006 | 191 | 2006 |
Interface and wetting layer effect on the catalyst‐free nucleation and growth of GaN nanowires T Stoica, E Sutter, RJ Meijers, RK Debnath, R Calarco, H Lüth, ... Small 4 (6), 751-754, 2008 | 187 | 2008 |
A new technique for fabricating three-dimensional micro-and nanostructures of various shapes VY Prinz, D Grützmacher, A Beyer, C David, B Ketterer, E Deckardt Nanotechnology 12 (4), 399, 2001 | 178 | 2001 |
Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings DJ Bell, L Dong, BJ Nelson, M Golling, L Zhang, D Grützmacher Nano letters 6 (4), 725-729, 2006 | 170 | 2006 |
Controllable fabrication of sige/si and sige/si/cr helical nanobelts L Zhang, E Deckhardt, A Weber, C Schönenberger, D Grützmacher Nanotechnology 16 (6), 655, 2005 | 160 | 2005 |
Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown - and -Based Topological Insulators P Olbrich, LE Golub, T Herrmann, SN Danilov, H Plank, VV Bel’Kov, ... Physical review letters 113 (9), 096601, 2014 | 153 | 2014 |
Hall effect measurements on InAs nanowires C Blömers, T Grap, MI Lepsa, J Moers, S Trellenkamp, D Grützmacher, ... Applied physics letters 101 (15), 2012 | 130 | 2012 |
Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕ AlInAs quantum-cascade structures S Tsujino, A Borak, E Müller, M Scheinert, CV Falub, H Sigg, ... Applied Physics Letters 86 (6), 2005 | 124 | 2005 |
Electroluminescence from strain-compensated quantum-cascade structures based on a bound-to-continuum transition L Diehl, S Menteşe, E Müller, D Grützmacher, H Sigg, U Gennser, ... Applied Physics Letters 81 (25), 4700-4702, 2002 | 124 | 2002 |
MBE growth optimization of topological insulator Bi2Te3 films J Krumrain, G Mussler, S Borisova, T Stoica, L Plucinski, CM Schneider, ... Journal of Crystal Growth 324 (1), 115-118, 2011 | 123 | 2011 |
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Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells D Stange, N Von den Driesch, D Rainko, S Roesgaard, I Povstugar, ... Optica 4 (2), 185-188, 2017 | 120 | 2017 |
Extreme ultraviolet interference lithography at the Paul Scherrer Institut V Auzelyte, C Dais, P Farquet, D Grützmacher, LJ Heyderman, F Luo, ... Journal of Micro/Nanolithography, MEMS and MOEMS 8 (2), 021204-021204-10, 2009 | 117 | 2009 |
Impact of nanometer-scale roughness on contact-angle hysteresis and globulin adsorption B Müller, M Riedel, R Michel, SM De Paul, R Hofer, D Heger, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 117 | 2001 |
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