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In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consistent method was applied by solving coupled Schrödinger-Poisson equation taking wave function penetration and strain effects into account. Experimental I-V and gate leakage characteristic for p-channel In _x Ga _1−x Sb MOSFETs are available in recent literature. However, a self-consistent simulation of C-V characterization and direct tunneling gate leakage current is yet to be done for both n-channel and p-channel In _x Ga _1−x Sb surface channel MOSFETs. We studied the variation of C-V characteristics and gate leakage current with some important process parameters like oxide thickness, channel composition, channel thickness and temperature for n-channel MOSFET in this work. Device performance should improve as compressive …